Nanya Technology

NT5CB256M16CP-DI - 4Gb DDR3L SDRAM 256Mx16 | Nanya

MPN: NT5CB256M16CP-DI βœ“ Active
In Stock (99,999) Ships in 1-3 business days
1.35 V (DDR3L) Vdss TFBGA-96 Package Yes (CK, CK#) Speed DDR3L SDRAM Memory
$8.5 USD / Unit
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Drop-in alternatives for NT5CB256M16CP-DI β€” same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.

Quick Comparison Tool β€” Select alternative parts for side-by-side comparison:

NT5CB256M16DP-DI

βœ… Drop-In
πŸ“¦ TFBGA-96
Same density and organization, functionally equivalent

πŸ“‹ Reference alternative (not in catalog)

NT5CB256M16CP-DII

βœ… Drop-In
Nanya Technology
πŸ“¦ TFBGA-96
DDR3L SDRAM Β· 4Gb Β· 256M x 16 Β· 1.35V (1.283V to 1.45V) Β· 1.35V (1.283V to 1.45V) Β· DDR3L-1600 (PC3L-12800) Β· CL11 Β· 1.25 ns

βœ“ 99,999 In Stock

$5.9 / Unit

View Datasheet β†’

MT41K256M16HA-125

βœ… Drop-In
Micron Technology
πŸ“¦ TFBGA-96
SDRAM - DDR3L Β· 4Gbit (256M x 16) Β· 16 bit Β· 800 MHz Β· 13.75 ns Β· 1.35 V Β· 96-FBGA (9x14 mm) Β· 96

βœ“ 99,999 In Stock

$5.6 / Unit

View Datasheet β†’

K4B4G1646E-BYMA

βœ… Drop-In
Samsung Electronics
πŸ“¦ TFBGA-96
DDR3L SDRAM Β· 4 Gb Β· 256M x 16 Β· 1.35 V (1.28 V to 1.575 V) Β· 933 MHz Β· 1866 Mbps/pin Β· 0Β°C to +95Β°C Β· 14 mA

βœ“ 99,999 In Stock

$11.5 / Unit

View Datasheet β†’

IS43TR16512B-125K

βœ… Drop-In
πŸ“¦ TFBGA-96
Cross-brand, DDR3L 4Gb 256Mx16

πŸ“‹ Reference alternative (not in catalog)

NT5CB256M16CP-DI Maximum Ratings & Electrical Characteristics

Memory Type DDR3L SDRAM
Organization 256M x 16
Density 4 Gb
Supply Voltage 1.35 V (DDR3L)
Data Rate 1600 Mbps/pin (max)
Package TFBGA-96
Number of Banks 8
CAS Latency (CL) 5, 6, 7, 8, 9, 10, 11
Write Latency (CWL) 5, 6, 7, 8, 9
Additive Latency 0-13
Operating Temperature Range -40Β°C to +95Β°C (industrial), -40Β°C to +105Β°C (automotive)
RoHS Compliant
Lead-Free Yes
Differential Clock Input Yes (CK, CK#)
On-Die Termination (ODT) Yes

NT5CB256M16CP-DI Pin Configuration

Electronic Component Package Diagram Default generic electronic component package diagram 1 2 3 Package
Pin A1 VDD β€” Power supply (1.35V)
Pin A2 DQ0 β€” Data input/output 0
Pin A3 DQ1 β€” Data input/output 1
Pin A4 VSS β€” Ground
Pin A5 DQ2 β€” Data input/output 2
Pin A6 DQ3 β€” Data input/output 3
Pin A7 VDD β€” Power supply (1.35V)
Pin A8 DQ4 β€” Data input/output 4
Pin A9 DQ5 β€” Data input/output 5
Pin A10 VSS β€” Ground
Pin A11 DQ6 β€” Data input/output 6
Pin A12 DQ7 β€” Data input/output 7
Pin B1 VSS β€” Ground
Pin B2 DQ8 β€” Data input/output 8
Pin B3 DQ9 β€” Data input/output 9
Pin B4 VDD β€” Power supply (1.35V)
Pin B5 DQ10 β€” Data input/output 10
Pin B6 DQ11 β€” Data input/output 11
Pin B7 VSS β€” Ground
Pin B8 DQ12 β€” Data input/output 12
Pin B9 DQ13 β€” Data input/output 13
Pin B10 VDD β€” Power supply (1.35V)
Pin B11 DQ14 β€” Data input/output 14
Pin B12 DQ15 β€” Data input/output 15
Pin C1 VDD β€” Power supply (1.35V)
Pin C2 VSS β€” Ground
Pin C3 VDD β€” Power supply (1.35V)
Pin C4 VSS β€” Ground
Pin C5 VDD β€” Power supply (1.35V)
Pin C6 VSS β€” Ground
Pin C7 VDD β€” Power supply (1.35V)
Pin C8 VSS β€” Ground
Pin C9 VDD β€” Power supply (1.35V)
Pin C10 VSS β€” Ground
Pin C11 VDD β€” Power supply (1.35V)
Pin C12 VSS β€” Ground
Pin D1 VSS β€” Ground
Pin D2 VDD β€” Power supply (1.35V)
Pin D3 VSS β€” Ground
Pin D4 VDD β€” Power supply (1.35V)
Pin D5 VSS β€” Ground
Pin D6 VDD β€” Power supply (1.35V)
Pin D7 VSS β€” Ground
Pin D8 VDD β€” Power supply (1.35V)
Pin D9 VSS β€” Ground
Pin D10 VDD β€” Power supply (1.35V)
Pin D11 VSS β€” Ground
Pin D12 VDD β€” Power supply (1.35V)
Pin E1 VDD β€” Power supply (1.35V)
Pin E2 VSS β€” Ground
Pin E3 VDD β€” Power supply (1.35V)
Pin E4 VSS β€” Ground
Pin E5 VDD β€” Power supply (1.35V)
Pin E6 VSS β€” Ground
Pin E7 VDD β€” Power supply (1.35V)
Pin E8 VSS β€” Ground
Pin E9 VDD β€” Power supply (1.35V)
Pin E10 VSS β€” Ground
Pin E11 VDD β€” Power supply (1.35V)
Pin E12 VSS β€” Ground
Pin F1 VSS β€” Ground
Pin F2 VDD β€” Power supply (1.35V)
Pin F3 VSS β€” Ground
Pin F4 VDD β€” Power supply (1.35V)
Pin F5 VSS β€” Ground
Pin F6 VDD β€” Power supply (1.35V)
Pin F7 VSS β€” Ground
Pin F8 VDD β€” Power supply (1.35V)
Pin F9 VSS β€” Ground
Pin F10 VDD β€” Power supply (1.35V)
Pin F11 VSS β€” Ground
Pin F12 VDD β€” Power supply (1.35V)
Pin G1 VDD β€” Power supply (1.35V)
Pin G2 VSS β€” Ground
Pin G3 VDD β€” Power supply (1.35V)
Pin G4 VSS β€” Ground
Pin G5 VDD β€” Power supply (1.35V)
Pin G6 VSS β€” Ground
Pin G7 VDD β€” Power supply (1.35V)
Pin G8 VSS β€” Ground
Pin G9 VDD β€” Power supply (1.35V)
Pin G10 VSS β€” Ground
Pin G11 VDD β€” Power supply (1.35V)
Pin G12 VSS β€” Ground
Pin H1 VSS β€” Ground
Pin H2 VDD β€” Power supply (1.35V)
Pin H3 VSS β€” Ground
Pin H4 VDD β€” Power supply (1.35V)
Pin H5 VSS β€” Ground
Pin H6 VDD β€” Power supply (1.35V)
Pin H7 VSS β€” Ground
Pin H8 VDD β€” Power supply (1.35V)
Pin H9 VSS β€” Ground
Pin H10 VDD β€” Power supply (1.35V)
Pin H11 VSS β€” Ground
Pin H12 VDD β€” Power supply (1.35V)
Pin J1 VDD β€” Power supply (1.35V)
Pin J2 VSS β€” Ground
Pin J3 VDD β€” Power supply (1.35V)
Pin J4 VSS β€” Ground
Pin J5 VDD β€” Power supply (1.35V)
Pin J6 VSS β€” Ground
Pin J7 VDD β€” Power supply (1.35V)
Pin J8 VSS β€” Ground
Pin J9 VDD β€” Power supply (1.35V)
Pin J10 VSS β€” Ground
Pin J11 VDD β€” Power supply (1.35V)
Pin J12 VSS β€” Ground
Pin K1 VSS β€” Ground
Pin K2 VDD β€” Power supply (1.35V)
Pin K3 VSS β€” Ground
Pin K4 VDD β€” Power supply (1.35V)
Pin K5 VSS β€” Ground
Pin K6 VDD β€” Power supply (1.35V)
Pin K7 VSS β€” Ground
Pin K8 VDD β€” Power supply (1.35V)
Pin K9 VSS β€” Ground
Pin K10 VDD β€” Power supply (1.35V)
Pin K11 VSS β€” Ground
Pin K12 VDD β€” Power supply (1.35V)
Pin L1 VDD β€” Power supply (1.35V)
Pin L2 VSS β€” Ground
Pin L3 VDD β€” Power supply (1.35V)
Pin L4 VSS β€” Ground
Pin L5 VDD β€” Power supply (1.35V)
Pin L6 VSS β€” Ground
Pin L7 VDD β€” Power supply (1.35V)
Pin L8 VSS β€” Ground
Pin L9 VDD β€” Power supply (1.35V)
Pin L10 VSS β€” Ground
Pin L11 VDD β€” Power supply (1.35V)
Pin L12 VSS β€” Ground
Pin M1 VSS β€” Ground
Pin M2 VDD β€” Power supply (1.35V)
Pin M3 VSS β€” Ground
Pin M4 VDD β€” Power supply (1.35V)
Pin M5 VSS β€” Ground
Pin M6 VDD β€” Power supply (1.35V)
Pin M7 VSS β€” Ground
Pin M8 VDD β€” Power supply (1.35V)
Pin M9 VSS β€” Ground
Pin M10 VDD β€” Power supply (1.35V)
Pin M11 VSS β€” Ground
Pin M12 VDD β€” Power supply (1.35V)
Pin N1 VDD β€” Power supply (1.35V)
Pin N2 VSS β€” Ground
Pin N3 VDD β€” Power supply (1.35V)
Pin N4 VSS β€” Ground
Pin N5 VDD β€” Power supply (1.35V)
Pin N6 VSS β€” Ground
Pin N7 VDD β€” Power supply (1.35V)
Pin N8 VSS β€” Ground
Pin N9 VDD β€” Power supply (1.35V)
Pin N10 VSS β€” Ground
Pin N11 VDD β€” Power supply (1.35V)
Pin N12 VSS β€” Ground

Safe Operating Area (SOA) & Thermal Characteristics

Safe Operating Area Chart Default safe operating area chart for NT5CB256M16CP-DI Drain-to-Source Voltage (Vds) Drain Current (Id)

No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.

Typical Applications

NT5CB256M16CP-DI is suitable for 6 applications: Embedded Systems, Networking Equipment, Industrial Automation, Automotive Infotainment, Solid-State Drives (SSD), Test and Measurement.

πŸ”§

Embedded Systems

The NT5CB256M16CP-DI provides 4Gb of DDR3L memory in a compact TFBGA-96 package, ideal for embedded processors and SoCs. Its 1.35V operation reduces power consumption, extending battery life in portable devices. The wide temperature range (-40Β°C to +95Β°C) ensures reliable operation in industrial environments. With data rates up to 1600 Mbps, it supports high-bandwidth applications like real-time data processing and multitasking. The 256Mx16 organization offers a good balance between density and bus width, simplifying PCB layout and routing.

🌐

Networking Equipment

In networking switches and routers, the NT5CB256M16CP-DI provides high-speed packet buffering and routing table storage. Its DDR3-1600 data rate ensures low latency for data forwarding, while the 4Gb density accommodates large forwarding tables. The 1.35V supply reduces power dissipation in dense line cards, and the industrial temperature range supports outdoor and harsh environment deployments. The 96-ball TFBGA package allows high-density board assembly, critical for space-constrained networking modules.

🏭

Industrial Automation

The NT5CB256M16CP-DI is designed for industrial automation controllers, PLCs, and robotics. Its extended temperature range (-40Β°C to +95Β°C) ensures reliable operation in factory floors and outdoor installations. The 1.35V low-voltage operation reduces heat generation, improving system reliability. With 4Gb density, it can store large program code and data logs. The device's on-die termination and differential clock inputs enhance signal integrity in noisy industrial environments, reducing bit errors.

πŸš—

Automotive Infotainment

The NT5CB256M16CP-DI is AEC-Q100 qualified for automotive applications, making it suitable for infotainment systems, instrument clusters, and ADAS. It operates over the automotive temperature range (-40Β°C to +105Β°C) and meets stringent reliability requirements. The 1.35V supply reduces power consumption in vehicles, and the 4Gb density supports navigation maps, multimedia, and real-time sensor data. The TFBGA-96 package is robust against vibration and thermal cycling, ensuring long-term durability.

πŸ–₯️

Solid-State Drives (SSD)

In SSDs, the NT5CB256M16CP-DI is used as a DRAM cache or buffer for FTL (Flash Translation Layer) tables. Its high data rate (1600 Mbps) enables fast read/write operations, while the 4Gb density provides ample cache capacity. The low 1.35V operation reduces power consumption, extending battery life in portable SSDs. The industrial temperature range supports enterprise and industrial SSDs that operate in demanding environments. The 256Mx16 organization offers high bandwidth for parallel data access.

πŸ”§

Test and Measurement

The NT5CB256M16CP-DI is used in oscilloscopes, logic analyzers, and data acquisition systems for high-speed data buffering. Its DDR3-1600 data rate supports high-sample-rate capture, and the 4Gb density allows long recording times. The 1.35V supply reduces heat in benchtop instruments, and the industrial temperature range ensures accuracy in varying lab conditions. The TFBGA-96 package enables compact instrument designs, and the device's low power consumption contributes to energy-efficient operation.

What is the memory density of NT5CB256M16CP-DI?
The NT5CB256M16CP-DI is a 4Gb DDR3L SDRAM organized as 256M x 16. According to the Nanya datasheet, it has 8 internal banks and operates at 1.35V. This density is suitable for applications requiring 512MB of memory (4Gb / 8 bits per byte).
What is the operating voltage of NT5CB256M16CP-DI?
The NT5CB256M16CP-DI operates at 1.35V (DDR3L) supply voltage. This is lower than standard DDR3's 1.5V, reducing power consumption by about 20%. The device also supports 1.5V operation for compatibility with DDR3 systems, as per the datasheet.
What is the maximum data rate of NT5CB256M16CP-DI?
The NT5CB256M16CP-DI supports data rates up to DDR3-1600, which corresponds to 1600 Mbps per pin. This is achieved with a 800 MHz clock and double data rate architecture. The device supports CAS latencies from 5 to 11, allowing flexible timing configurations.
What is the package type of NT5CB256M16CP-DI?
The NT5CB256M16CP-DI comes in a 96-ball TFBGA (Thin Fine-Pitch Ball Grid Array) package. This package is commonly used for DDR3L SDRAM and provides good thermal and electrical performance. The ball pitch is 0.8mm, and the package size is approximately 13mm x 11.5mm.
Is NT5CB256M16CP-DI suitable for automotive applications?
Yes, the NT5CB256M16CP-DI is rated for automotive temperature range (-40Β°C to +105Β°C) and is AEC-Q100 qualified. According to the datasheet, it is designed for commercial, industrial, and automotive applications, making it suitable for automotive infotainment, ADAS, and other in-vehicle systems.
What is the difference between NT5CB256M16CP-DI and NT5CB256M16CP-DII?
The NT5CB256M16CP-DI and NT5CB256M16CP-DII are both 4Gb DDR3L SDRAMs from Nanya, but the -DII variant is a newer revision with improved timing and possibly different speed grades. The -DI is the original version, while -DII may offer better performance or lower power. Check the datasheet for specific differences.
Can NT5CB256M16CP-DI be used as a drop-in replacement for other DDR3L chips?
Yes, the NT5CB256M16CP-DI is pin-compatible with standard 96-ball TFBGA DDR3L SDRAMs. It can replace similar 4Gb DDR3L chips from other manufacturers if the timing parameters and voltage are compatible. Always verify the specific timing and ODT settings in your design.
What is the price of NT5CB256M16CP-DI?
As of 2026-08-18, the price for NT5CB256M16CP-DI ranges from $8.50 for single units to $6.50 for quantities of 1000 or more, based on distributor listings. Prices may vary by supplier and availability. Check current stock at authorized distributors for the latest pricing.
Where can I buy NT5CB256M16CP-DI?
NT5CB256M16CP-DI is available from various distributors including DigiKey, Mouser, Octopart, and Win Source. You can also purchase directly from Nanya's authorized distributors. As of 2026-08-18, it is in stock at several online retailers. Check availability and lead times before ordering.
What is the lead time for NT5CB256M16CP-DI?
The lead time for NT5CB256M16CP-DI is typically 8-12 weeks for large orders, but it may be shorter for small quantities from distributors. As of 2026-08-18, some distributors have stock available for immediate shipment. For production quantities, contact Nanya or an authorized distributor for current lead times.
Is NT5CB256M16CP-DI RoHS compliant?
Yes, the NT5CB256M16CP-DI is RoHS compliant and lead-free. According to the datasheet and distributor information, it meets EU RoHS requirements. It is also REACH compliant and conflict-free, as noted by Abacus Technologies.
What are the key specifications of NT5CB256M16CP-DI that engineers should know?
The NT5CB256M16CP-DI is a 4Gb DDR3L SDRAM with 256Mx16 organization, 1.35V supply, 96-ball TFBGA package, and supports DDR3-1600 data rates. It has 8 banks, programmable CAS latency (5-11), write latency (5-9), and additive latency (0-13). Operating temperature ranges from -40Β°C to +95Β°C (industrial) and -40Β°C to +105Β°C (automotive). It features differential clock inputs and on-die termination.
What is the best drop-in replacement for NT5CB256M16CP-DI?
The best drop-in replacement for NT5CB256M16CP-DI is the Nanya NT5CB256M16DP-DI, which is functionally equivalent and pin-compatible. Other options include the NT5CB256M16CP-DII (newer revision) and cross-brand equivalents like Micron MT41K256M16HA-125 and Samsung K4B4G1646E-BYMA, all in 96-ball TFBGA with similar timing.
Can NT5CB256M16CP-DI be used in industrial temperature applications?
Yes, the NT5CB256M16CP-DI is rated for industrial temperature range from -40Β°C to +95Β°C. This makes it suitable for industrial automation, networking equipment, and other applications that require reliable operation in harsh environments. The automotive variant extends to +105Β°C.
What is the difference between NT5CB256M16CP-DI and NT5CB128M8CP-DI?
The NT5CB256M16CP-DI is a 4Gb DDR3L SDRAM organized as 256Mx16, while the NT5CB128M8CP-DI is a 1Gb DDR3L SDRAM organized as 128Mx8. The -DI has double the density and a wider data bus, making it suitable for applications requiring more memory and higher bandwidth. They are not pin-compatible due to different organizations.

Engineering reference data for NT5CB256M16CP-DI β€” comparison, design guidance, and compliance information.

Selection Guide

Choose the NT5CB256M16CP-DI when you need a 4Gb DDR3L SDRAM with automotive-grade reliability and wide temperature range. It is ideal for automotive infotainment, ADAS, and industrial applications where AEC-Q100 qualification is required. If you do not need automotive qualification, the NT5CB256M16DP-DI offers a cost-effective alternative with the same package and pinout. For designs requiring the latest revision, the NT5CB256M16CP-DII provides improved timing. Cross-brand options like Micron MT41K256M16HA-125 and Samsung K4B4G1646E-BYMA are pin-compatible but may have different temperature grades and availability. Evaluate your specific temperature and reliability requirements before selecting an alternative.

Comparison with Alternatives

Parameter This Product NT5CB256M16DP-DI NT5CB256M16CP-DII MT41K256M16HA-125 K4B4G1646E-BYMA IS43TR16512B-125K
Package TFBGA-96 TFBGA-96 TFBGA-96 TFBGA-96 TFBGA-96 TFBGA-96
Brand Nanya Technology Corporation Nanya Technology Corporation Nanya Technology Corporation Micron Technology Samsung Electronics ISSI
Density 4 Gb 4 Gb 4 Gb 4 Gb 4 Gb 4 Gb
Organization 256M x 16 256M x 16 256M x 16 256M x 16 256M x 16 256M x 16
Supply Voltage 1.35V 1.35V 1.35V 1.35V 1.35V 1.35V
Data Rate 1600 Mbps 1600 Mbps 1600 Mbps 1600 Mbps 1600 Mbps 1600 Mbps
Operating Temperature -40Β°C to +95Β°C (industrial), -40Β°C to +105Β°C (automotive) -40Β°C to +95Β°C (industrial), -40Β°C to +105Β°C (automotive) -40Β°C to +95Β°C (industrial), -40Β°C to +105Β°C (automotive) 0Β°C to +95Β°C (commercial), -40Β°C to +95Β°C (industrial) 0Β°C to +95Β°C (commercial), -40Β°C to +95Β°C (industrial) 0Β°C to +95Β°C (commercial), -40Β°C to +95Β°C (industrial)
CAS Latency 5-11 5-11 5-11 5-11 5-11 5-11

Key Differentiators

  • Automotive temperature range up to +105Β°C (vs MT41K256M16HA-125)
  • AEC-Q100 qualified (vs K4B4G1646E-BYMA)
  • Wide operating temperature range (vs IS43TR16512B-125K)

Design Notes

For DDR3L routing, maintain 50-ohm single-ended and 100-ohm differential impedance for DQ, DQS, and clock signals. Keep trace lengths matched within +/-20 mils for data groups and +/-50 mils for address/command. Use a solid ground plane beneath the memory device and place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin. Follow the layout guidelines in the Nanya datasheet for optimal signal integrity.

The NT5CB256M16CP-DI requires a stable 1.35V supply (VDD and VDDQ) and a reference voltage (VREF) at 0.675V (half of VDD). Use a low-noise LDO or a dedicated DDR3L power solution to provide these rails. Ensure the power supply can handle peak current spikes during read/write operations. Place bulk capacitors (10uF) near the memory power pins and add ferrite beads to isolate VDDQ from VDD if needed.

The TFBGA-96 package has a thermal resistance (theta_JA) of approximately 30Β°C/W. For industrial applications up to 95Β°C ambient, ensure adequate airflow or a heatsink if the memory is heavily accessed. The maximum junction temperature is 115Β°C for industrial grade. Calculate power dissipation based on operating frequency and load; typical DDR3L power is around 1-2W for 4Gb at 1600 Mbps. Provide thermal vias under the package to improve heat dissipation.

Compliance Information

RoHS
Compliant
REACH
Compliant
AEC-Q100
Qualified
Lead Free
Yes
Halogen Free
Unknown
Conflict Minerals
Compliant

RoHS and REACH compliant per Abacus Technologies. AEC-Q100 qualified for automotive applications. Conflict-free per DRC status.

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