K4B4G1646D-BYK00 vs K4A4G085WE-BCRC Comparison
Detailed side-by-side comparison of K4B4G1646D-BYK00 by Samsung Electronics and K4A4G085WE-BCRC by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4B4G1646D-BYK00
K4B4G1646D-BYK00 - 4Gb DDR3L SDRAM 256Mx16 96FBGA | Samsung
K4B4G1646D-BYK00 β ActiveSamsung Electronics
K4A4G085WE-BCRC
K4A4G085WE-BCRC - 4Gb DDR4-2400 x8 SDRAM | Samsung
K4A4G085WE-BCRC β ActiveSpecification Comparison
| Parameter | K4B4G1646D-BYK00 | K4A4G085WE-BCRC |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $7.50 | $1.36 |
| Memory Type | DDR3L SDRAM | DDR4 SDRAM |
| Density | 4 Gb | 4 Gbit |
| Organization | 256M x 16 | 512M x 8 |
| Data Rate | 1600 Mbps | 2400 Mbps |
| Supply Voltage | 1.35 V (also operates at 1.5 V) | β |
| Package | 96-ball TFBGA | FBGA-78 |
| Number of Terminals | 96 | β |
| Operating Temperature | 0Β°C to 85Β°C | [DATA_NEEDED: Operating Temperature Range] |
| CAS Latency | Programmable | β |
| Additional Features | Auto precharge, asynchronous reset, ZQ calibration, data mask, dynamic on-chip termination | β |
| RoHS | Compliant | β |
| Lead-Free | Yes | β |
| Halogen-Free | Yes | β |
| Package Shape | RECTANGULAR | β |
| Temperature Grade | OTHER | β |
| Clock Cycle Time (tCK) | β | 0.833 ns |
| Supply Voltage (VDD) | β | 1.2 V |
| I/O Voltage (VDDQ) | β | 1.2 V |
| Core Voltage (VPP) | β | 2.5 V |
| Mounting Type | β | Surface Mount |
| Process Node Family | β | Samsung E-die |
| Interface | β | Parallel |
| Bank Groups | β | 4n prefetch DDR4 architecture |
| Refresh | β | 8n / 1X refresh (per JEDEC DDR4) |
| MSL Level | β | [DATA_NEEDED: Moisture Sensitivity Level] |
| RoHS Status | β | Compliant (per LCSC listing) |