K4A4G085WE-BCRC - 4Gb DDR4-2400 x8 SDRAM | Samsung
MPN: K4A4G085WE-BCRC β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.84 | $1.84 |
| 10 | $1.75 | $17.50 |
| 100 | $1.62 | $162.00 |
| 500 | $1.48 | $740.00 |
| 1,000 | $1.36 | $1,360.00 |
Drop-in alternatives for K4A4G085WE-BCRC β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
K4A4G085WG-BCWE
β Drop-Inπ Reference alternative (not in catalog)
K4A4G085WF-BCWE
β Drop-Inπ Reference alternative (not in catalog)
K4A4G085WE-BCWE
β Drop-In β οΈ εζ°εΎ ιͺθ―π Reference alternative (not in catalog)
MT40A512M8HX
β Drop-Inπ Reference alternative (not in catalog)
H5AN4G8NCM
β Drop-Inπ Reference alternative (not in catalog)
K4A4G085WE-BCRC Maximum Ratings & Electrical Characteristics
| Memory Type | DDR4 SDRAM |
| Density | 4 Gbit |
| Organization | 512M x 8 |
| Data Rate | 2400 Mbps |
| Clock Cycle Time (tCK) | 0.833 ns |
| Supply Voltage (VDD) | 1.2 V |
| I/O Voltage (VDDQ) | 1.2 V |
| Core Voltage (VPP) | 2.5 V |
| Package | FBGA-78 |
| Mounting Type | Surface Mount |
| Process Node Family | Samsung E-die |
| Interface | Parallel |
| Bank Groups | 4n prefetch DDR4 architecture |
| Refresh | 8n / 1X refresh (per JEDEC DDR4) |
| RoHS Status | Compliant (per LCSC listing) |
K4A4G085WE-BCRC fbga-78 Pin Configuration Guide
Complete pinout information for K4A4G085WE-BCRC (fbga-78 package). This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.
No detailed pinout data available for K4A4G085WE-BCRC.
Refer to the datasheet for full pin configuration.
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
K4A4G085WE-BCRC is suitable for 6 applications: Industrial Control Main Memory, Network Communication Equipment, Embedded Computing Modules (COM/SOM), Memory Module Repair and Replacement, High-Performance Computing / Edge AI Boards, Test, Measurement and Protocol Validation.
Industrial Control Main Memory
The K4A4G085WE-BCRC provides 4 Gbit of main-system memory at 2400 Mbps for industrial controllers, PLCs, and factory automation CPUs. Its 1.2V operation cuts dynamic power roughly 25% versus DDR3 (per Samsung's DDR4 product page), reducing heat load inside sealed industrial enclosures, while the x8 organization gives deep 512M-word addressing per rank. Typically deployed as two to four devices on a soldered-down memory bus fed by an SoC or FPGA memory controller; bank-group interleaving sustains bandwidth for real-time control loops and protocol stacks. The 2400 Mbps rate delivers about 19.2 Gbit/s per device at DDR4-2400, ample for motion control and edge data logging.
Recommended
Network Communication Equipment
Switches, routers, and 5G small-cell line cards use the K4A4G085WE-BCRC for packet buffering and lookup tables. The 2400 Mbps data rate and DDR4 bank-group architecture provide the random-access throughput needed for queue management, while 4 Gbit per device lets designers scale buffering depth by paralleling devices on shared chip selects. The 1.2V VDD/VDDQ rails ease thermal design in 1U fanless network appliances. NTCLCR's product description explicitly targets network communication equipment for this part. Designers should budget ODT settings and fly-by C/A routing to maintain signal integrity across the multi-drop memory bus.
Recommended
Embedded Computing Modules (COM/SOM)
Soldered-down DDR4 on SoMs and embedded compute modules is a primary use case for the K4A4G085WE-BCRC. Its E-die process and FBGA-78 footprint allow two devices (1 GB total at 64-bit width with eight x8 devices, or 1 GB at 32-bit with four) directly on the module PCB, eliminating SODIMM connectors for vibration-prone and space-constrained platforms such as edge AI gateways and medical portable instruments. The 2400 Mbps speed matches mainstream embedded SoC memory controllers, and 1.2V operation keeps module power budgets low. PlatformBring-up requires DDR4 write leveling and read training firmware per the Samsung Rev. 1.6 datasheet.
Recommended
Memory Module Repair and Replacement
RAM repair services and module rework shops use the K4A4G085WE-BCRC to replace failed x8 DDR4-2400 devices on UDIMM, SODIMM, and soldered-down assemblies. Because it matches the standard JEDEC FBGA-78 x8 footprint, it can replace Samsung W-die/G-die equivalents (K4A4G085WF-BCWE, K4A4G085WG-BCWE) and, with controller re-training, the Micron MT40A512M8HX and SK Hynix H5AN4G8NCM equivalents. Successful BGA rework requires proper profile-controlled hot-air or IR reflow and post-replacement memory test ( MemTest86 or in-cabinet POST) to confirm training margins. The aichiplink technical guide specifically covers FBGA-78 pinout identification for repair workflows.
Recommended
High-Performance Computing / Edge AI Boards
GPU companion boards, vision processing platforms, and edge AI accelerators use multiple K4A4G085WE-BCRC devices to assemble 32-bit or 64-bit memory buses. At DDR4-2400 a single x8 device sustains roughly 2.4 GB/s, so an eight-device 64-bit bus delivers about 19.2 GB/s for feature-map and frame buffering. The 1.2V rail and 2.5V VPP are typically generated from onboard point-of-load converters, and the FBGA-78 package supports dense two-sided module assembly. For AI workloads with high random-access traffic, DDR4 bank-group interleaving helps hide row-activation latency versus single-bank DDR3 designs.
Recommended
Test, Measurement and Protocol Validation
Bench instruments, logic analysis platforms, and DDR4 protocol validation fixtures use the K4A4G085WE-BCRC as a reference device for controller bring-up and eye-margin characterization. Its documented Rev. 1.6 AC timing tables (including the section 13.3 clock specification published in the datasheet excerpt) provide a stable electrical target for validating write leveling, read training, and ODT sweeps. Engineering teams also use this device to qualify alternate DRAM vendors, since swapping in the Micron MT40A512M8HX or SK Hynix H5AN4G8NCM equivalents on the same fixture exposes sensitivity to die-level timing variation.
Recommended
Recommended Products Summary
Engineering reference data for K4A4G085WE-BCRC β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | K4A4G085WG-BCWE | K4A4G085WF-BCWE | MT40A512M8HX | H5AN4G8NCM |
|---|---|---|---|---|---|
| Package | FBGA-78 | FBGA-78 - same | FBGA-78 - same | FBGA-78 - same | FBGA-78 - same |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Micron Technology | SK Hynix |
| Density | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit |
| Organization | 512M x 8 | 512M x 8 | 512M x 8 | 512M x 8 | 512M x 8 |
| Data Rate | 2400 Mbps (DDR4-2400) | 2400 Mbps (-BC bin) | 2400 Mbps (-BC bin) | [DATA_NEEDED] (series spans 1866-3200 Mbps) | [DATA_NEEDED] (series spans 2133-3200 Mbps) |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Die Process | E-die | G-die (newer node) | W-die | [DATA_NEEDED] | [DATA_NEEDED] |
| Unit Price (qty 1, as of 2026-09-01) | $1.84 | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
Key Differentiators
- Samsung E-die process maturity for industrial sourcing (vs K4A4G085WG-BCWE)
- x8 organization with deep per-rank addressing (vs K4A4G165WG-BCWE)
- Second-source availability at identical footprint (vs MT40A512M8HX)
Design Notes
Route the DDR4 command/address bus in fly-by topology to all K4A4G085WE-BCRC devices with 40-ohm controlled impedance, and match DQ/DM/DQS byte lanes within +/-25 mil per group. Keep the memory bus on layers adjacent to a solid ground plane; avoid splitting reference planes under data groups. Place 0.1 uF decoupling per VDD/VDDQ ball cluster plus bulk capacitance at the regulator output to handle simultaneous switching currents at 2400 Mbps.
The most common failure mode on first bring-up is skipping or misconfiguring DDR4 initialization: ZQ calibration, write leveling, read training, and mode register programming must all complete in the datasheet-specified order. Also remember this device needs a separate 2.5V VPP rail; applying only 1.2V will leave the word-line charge pump unpowered and the device will not function. Verify the controller supports the -BC (DDR4-2400) timing bin including tCK 0.833 ns.
Estimated: a single 4Gb DDR4-2400 device drawing typical DDR4-class current on a 1.2V rail dissipates on the order of a few hundred milliwatts; for a 4-device bus budget roughly 1-2 W total (input assumptions: 2400 Mbps, 50% read/write mix, active standby duty). Size the 1.2V converter accordingly and sequence VPP (2.5 V) with VDD per the Samsung Rev. 1.6 datasheet power-up requirements to avoid latch-up during startup.
Compliance Information
RoHS compliance and lead-free status per LCSC and Lisleapex distributor listings. REACH, halogen-free, and conflict-minerals declarations not found in provided data - request Samsung environmental certificates.
