K4B4G1646E-BCMA vs K4B4G1646E-BYK000 Comparison
Detailed side-by-side comparison of K4B4G1646E-BCMA by Samsung Electronics and K4B4G1646E-BYK000 by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4B4G1646E-BCMA
K4B4G1646E-BCMA - 4Gb DDR3 SDRAM 1066MHz FBGA-96 | Samsung
K4B4G1646E-BCMA β ActiveSamsung Electronics
K4B4G1646E-BYK000
K4B4G1646E-BYK000 - 4Gb DDR3L SDRAM 256Mx16 | Samsung
K4B4G1646E-BYK000 β ActiveSpecification Comparison
| Parameter | K4B4G1646E-BCMA | K4B4G1646E-BYK000 |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $3.24 | $0.56 |
| Memory Type | DDR3 SDRAM | DDR3L SDRAM |
| Density | 4 Gbit | β |
| Organization | 256M x 16 | 256M x 16 |
| Clock / Data Rate | 1066 MHz / 1066 Mbps per data pin | β |
| Supply Voltage | 1.425 V to 1.575 V (1.5 V nominal) | β |
| Operating Temperature | 0C to +95C | [DATA_NEEDED: operating temperature range] |
| Package | FBGA-96 (7.5 x 13.3 mm) | 96-FBGA (BYK) |
| Operating Supply Current (IDD) | 55 mA | β |
| Standby Current | 2 mA | β |
| Auto Precharge | Yes | β |
| Asynchronous Reset | Yes | β |
| On-Die Termination (ODT) | Dynamic ODT supported | β |
| ZQ Calibration | Yes | β |
| Data Mask Function | Yes | β |
| Mounting Type | Surface Mount (BGA) | Surface Mount |
| RoHS Status | Compliant | [DATA_NEEDED: RoHS status] |
| Memory Size | β | 4 Gbit |
| Speed Grade | β | DDR3-1600 (1.25 ns clock cycle) |
| Clock Frequency | β | 800 MHz |
| CAS Latency (CL) | β | [DATA_NEEDED: CAS latency - 1.25 ns CL grade indicates CL11 but not explicitly stated in provided data] |
| Supply Voltage (VDD) | β | 1.35 V (DDR3L), 1.5 V compatible (DDR3) |
| Number of Banks | β | [DATA_NEEDED: bank count] |
| Die Process | β | Samsung E-die |
| Interface | β | Parallel |
| Features | β | Auto precharge, asynchronous reset, ZQ calibration, dynamic on-chip termination, data mask |
| Access Time | β | 1.25 ns |