K4B4G1646E-BCNB vs AS4C256M16D3L-12BCN Comparison
Detailed side-by-side comparison of K4B4G1646E-BCNB by Samsung Electronics and AS4C256M16D3L-12BCN by Alliance Memory. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4B4G1646E-BCNB - 4Gb DDR3 SDRAM, 256Mx16, 1.35V | Samsung
K4B4G1646E-BCNB β ActiveAlliance Memory
AS4C256M16D3L-12BCN
AS4C256M16D3L-12BCN - 4Gbit DDR3L SDRAM 800MHz | Alliance Memory
AS4C256M16D3L-12BCN β ActiveSpecification Comparison
| Parameter | K4B4G1646E-BCNB | AS4C256M16D3L-12BCN |
|---|---|---|
| Brand | Samsung Electronics | Alliance Memory |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $13.52 | $6.00 |
| Memory Type | DDR3 SDRAM | DDR3L SDRAM |
| Memory Size | 4 Gb | 4 Gbit |
| Organization | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35 V (1.283 V to 1.45 V) | 1.35 V |
| Data Rate | 1866 Mbps | 1600 Mbps |
| CAS Latency | [DATA_NEEDED: CAS Latency] | 20 ns |
| Operating Temperature | 0C to +95C | β |
| Package | 96-ball FBGA | 96-FBGA (9x13 mm) |
| Mounting Type | Surface Mount | β |
| RoHS Status | Compliant | β |
| Number of Pins | 96 | 96 |
| Interface Type | Parallel | Parallel |
| Refresh | 8K / 64 ms | β |
| Burst Length | 8, 4 (fixed) | β |
| Write Recovery Time | [DATA_NEEDED: tWR] | β |
| Row Cycle Time | [DATA_NEEDED: tRC] | β |
| Row Address Strobe to Column Address Strobe Delay | [DATA_NEEDED: tRCD] | β |
| Row Precharge Time | [DATA_NEEDED: tRP] | β |
| Active to Precharge Time | [DATA_NEEDED: tRAS] | β |
| Data Bus Width | β | 16 bit |
| Maximum Clock Frequency | β | 800 MHz |
| Mounting Style | β | SMD/SMT |
| Operating Temperature Range | β | 0C to +95C (Tc) |
| RoHS | β | Compliant |
| Halogen Free | β | Yes |