AS4C256M16D3L-12BCN - 4Gbit DDR3L SDRAM 800MHz | Alliance Memory
MPN: AS4C256M16D3L-12BCN β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $8.5 | $8.50 |
| 10 | $7.8 | $78.00 |
| 100 | $7.1 | $710.00 |
| 500 | $6.5 | $3,250.00 |
| 1,000 | $6 | $6,000.00 |
Drop-in alternatives for AS4C256M16D3L-12BCN β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
AS4C256M16D3LB-12BCN
β Drop-Inπ Reference alternative (not in catalog)
AS4C256M16D3A-12BCN
β Drop-Inπ Reference alternative (not in catalog)
AS4C256M16D3-12BCN
β Drop-Inπ Reference alternative (not in catalog)
MT41K256M16HA-125
β Drop-Inβ 99,999 In Stock
$5.6 / Unit
View Datasheet βIS43TR16512B-125KBLI
β Drop-Inπ Reference alternative (not in catalog)
K4B4G1646E-BYMA
β Drop-Inβ 99,999 In Stock
$11.5 / Unit
View Datasheet βAS4C256M16D3L-12BCN Maximum Ratings & Electrical Characteristics
| Memory Type | DDR3L SDRAM |
| Memory Size | 4 Gbit |
| Organization | 256M x 16 |
| Data Bus Width | 16 bit |
| Maximum Clock Frequency | 800 MHz |
| Data Rate | 1600 Mbps |
| CAS Latency | 20 ns |
| Supply Voltage | 1.35 V |
| Package | 96-FBGA (9x13 mm) |
| Mounting Style | SMD/SMT |
| Operating Temperature Range | 0C to +95C (Tc) |
| RoHS | Compliant |
| Halogen Free | Yes |
| Interface Type | Parallel |
| Number of Pins | 96 |
AS4C256M16D3L-12BCN Pin Configuration
| Pin A1 | VDD β Power supply (1.35V) |
| Pin A2 | DQ0 β Data input/output 0 |
| Pin A3 | DQ1 β Data input/output 1 |
| Pin A4 | VSS β Ground |
| Pin A5 | DQ2 β Data input/output 2 |
| Pin A6 | DQ3 β Data input/output 3 |
| Pin A7 | VDDQ β I/O power supply |
| Pin A8 | DQ4 β Data input/output 4 |
| Pin A9 | DQ5 β Data input/output 5 |
| Pin A10 | VSS β Ground |
| Pin A11 | DQ6 β Data input/output 6 |
| Pin A12 | DQ7 β Data input/output 7 |
| Pin B1 | VSS β Ground |
| Pin B2 | DQ8 β Data input/output 8 |
| Pin B3 | DQ9 β Data input/output 9 |
| Pin B4 | VDD β Power supply |
| Pin B5 | DQ10 β Data input/output 10 |
| Pin B6 | DQ11 β Data input/output 11 |
| Pin B7 | VSS β Ground |
| Pin B8 | DQ12 β Data input/output 12 |
| Pin B9 | DQ13 β Data input/output 13 |
| Pin B10 | VDDQ β I/O power supply |
| Pin B11 | DQ14 β Data input/output 14 |
| Pin B12 | DQ15 β Data input/output 15 |
| Pin C1 | VDDQ β I/O power supply |
| Pin C2 | VSS β Ground |
| Pin C3 | VDD β Power supply |
| Pin C4 | VSS β Ground |
| Pin C5 | VDDQ β I/O power supply |
| Pin C6 | VSS β Ground |
| Pin C7 | VDD β Power supply |
| Pin C8 | VSS β Ground |
| Pin C9 | VDDQ β I/O power supply |
| Pin C10 | VSS β Ground |
| Pin C11 | VDD β Power supply |
| Pin C12 | VSS β Ground |
| Pin D1 | A0 β Address input 0 |
| Pin D2 | A1 β Address input 1 |
| Pin D3 | A2 β Address input 2 |
| Pin D4 | A3 β Address input 3 |
| Pin D5 | A4 β Address input 4 |
| Pin D6 | A5 β Address input 5 |
| Pin D7 | A6 β Address input 6 |
| Pin D8 | A7 β Address input 7 |
| Pin D9 | A8 β Address input 8 |
| Pin D10 | A9 β Address input 9 |
| Pin D11 | A10/AP β Address input 10 / Auto-precharge |
| Pin D12 | A11 β Address input 11 |
| Pin E1 | A12 β Address input 12 |
| Pin E2 | A13 β Address input 13 |
| Pin E3 | A14 β Address input 14 |
| Pin E4 | BA0 β Bank address 0 |
| Pin E5 | BA1 β Bank address 1 |
| Pin E6 | BA2 β Bank address 2 |
| Pin E7 | RAS# β Row address strobe |
| Pin E8 | CAS# β Column address strobe |
| Pin E9 | WE# β Write enable |
| Pin E10 | CS# β Chip select |
| Pin E11 | CKE β Clock enable |
| Pin E12 | ODT β On-die termination |
| Pin F1 | CK β Clock (positive) |
| Pin F2 | CK# β Clock (negative) |
| Pin F3 | VDD β Power supply |
| Pin F4 | VSS β Ground |
| Pin F5 | VDDQ β I/O power supply |
| Pin F6 | VSS β Ground |
| Pin F7 | VDD β Power supply |
| Pin F8 | VSS β Ground |
| Pin F9 | VDDQ β I/O power supply |
| Pin F10 | VSS β Ground |
| Pin F11 | VDD β Power supply |
| Pin F12 | VSS β Ground |
| Pin G1 | DM0 β Data mask 0 |
| Pin G2 | DM1 β Data mask 1 |
| Pin G3 | VSS β Ground |
| Pin G4 | VDD β Power supply |
| Pin G5 | VSS β Ground |
| Pin G6 | VDDQ β I/O power supply |
| Pin G7 | VSS β Ground |
| Pin G8 | VDD β Power supply |
| Pin G9 | VSS β Ground |
| Pin G10 | VDDQ β I/O power supply |
| Pin G11 | VSS β Ground |
| Pin G12 | VDD β Power supply |
| Pin H1 | DQS0 β Data strobe 0 |
| Pin H2 | DQS0# β Data strobe 0 (negative) |
| Pin H3 | DQS1 β Data strobe 1 |
| Pin H4 | DQS1# β Data strobe 1 (negative) |
| Pin H5 | VDDQ β I/O power supply |
| Pin H6 | VSS β Ground |
| Pin H7 | VDD β Power supply |
| Pin H8 | VSS β Ground |
| Pin H9 | VDDQ β I/O power supply |
| Pin H10 | VSS β Ground |
| Pin H11 | VDD β Power supply |
| Pin H12 | VSS β Ground |
| Pin J1 | RESET# β Reset (active low) |
| Pin J2 | VDD β Power supply |
| Pin J3 | VSS β Ground |
| Pin J4 | VDDQ β I/O power supply |
| Pin J5 | VSS β Ground |
| Pin J6 | VDD β Power supply |
| Pin J7 | VSS β Ground |
| Pin J8 | VDDQ β I/O power supply |
| Pin J9 | VSS β Ground |
| Pin J10 | VDD β Power supply |
| Pin J11 | VSS β Ground |
| Pin J12 | VDDQ β I/O power supply |
| Pin K1 | VSS β Ground |
| Pin K2 | VDDQ β I/O power supply |
| Pin K3 | VSS β Ground |
| Pin K4 | VDD β Power supply |
| Pin K5 | VSS β Ground |
| Pin K6 | VDDQ β I/O power supply |
| Pin K7 | VSS β Ground |
| Pin K8 | VDD β Power supply |
| Pin K9 | VSS β Ground |
| Pin K10 | VDDQ β I/O power supply |
| Pin K11 | VSS β Ground |
| Pin K12 | VDD β Power supply |
| Pin L1 | VDDQ β I/O power supply |
| Pin L2 | VSS β Ground |
| Pin L3 | VDD β Power supply |
| Pin L4 | VSS β Ground |
| Pin L5 | VDDQ β I/O power supply |
| Pin L6 | VSS β Ground |
| Pin L7 | VDD β Power supply |
| Pin L8 | VSS β Ground |
| Pin L9 | VDDQ β I/O power supply |
| Pin L10 | VSS β Ground |
| Pin L11 | VDD β Power supply |
| Pin L12 | VSS β Ground |
| Pin M1 | VSS β Ground |
| Pin M2 | VDD β Power supply |
| Pin M3 | VSS β Ground |
| Pin M4 | VDDQ β I/O power supply |
| Pin M5 | VSS β Ground |
| Pin M6 | VDD β Power supply |
| Pin M7 | VSS β Ground |
| Pin M8 | VDDQ β I/O power supply |
| Pin M9 | VSS β Ground |
| Pin M10 | VDD β Power supply |
| Pin M11 | VSS β Ground |
| Pin M12 | VDDQ β I/O power supply |
| Pin N1 | VDD β Power supply |
| Pin N2 | VSS β Ground |
| Pin N3 | VDDQ β I/O power supply |
| Pin N4 | VSS β Ground |
| Pin N5 | VDD β Power supply |
| Pin N6 | VSS β Ground |
| Pin N7 | VDDQ β I/O power supply |
| Pin N8 | VSS β Ground |
| Pin N9 | VDD β Power supply |
| Pin N10 | VSS β Ground |
| Pin N11 | VDDQ β I/O power supply |
| Pin N12 | VSS β Ground |
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
AS4C256M16D3L-12BCN is suitable for 6 applications: Networking Equipment, Industrial Automation, Embedded Computing, Consumer Electronics, Data Storage Systems, Test and Measurement.
Networking Equipment
The AS4C256M16D3L-12BCN provides high-bandwidth, low-power memory for routers and switches. Its 800MHz clock and 16-bit bus enable fast packet processing, while 1.35V operation reduces power in always-on network devices. The 4Gbit density supports large routing tables and buffering. In a router, it is used as main memory for the CPU and NPU, with the parallel interface connecting directly to the memory controller. Performance is critical for line-rate forwarding, and the DDR3L interface ensures low latency. Power dissipation is minimized due to the low voltage, which is essential for fanless designs.
Recommended
Industrial Automation
In industrial controllers and PLCs, the AS4C256M16D3L-12BCN offers reliable, low-power memory for real-time data logging and control algorithms. Its 4Gbit capacity allows storing large process variables, and the 1.35V supply is compatible with energy-efficient industrial power rails. The 96-FBGA package withstands harsh environments with proper thermal management. The memory is used in conjunction with an MCU or FPGA, providing fast access for deterministic control loops. The DDR3L interface supports high-speed data transfer, while the low voltage reduces heat generation in sealed enclosures. This makes it ideal for factory automation and robotics.
Recommended
Embedded Computing
The AS4C256M16D3L-12BCN is ideal for embedded computing modules, such as single-board computers and edge gateways. Its 4Gbit density provides ample memory for operating systems and applications, while the 1.35V operation reduces power consumption in battery-powered or thermally constrained systems. The 800MHz clock enables responsive multitasking. In an embedded system, the memory is typically connected to a processor's memory controller, with the parallel interface simplifying PCB layout. The low voltage and high bandwidth make it suitable for IoT gateways and industrial PCs, where reliability and efficiency are paramount.
Recommended
Consumer Electronics
For set-top boxes, smart TVs, and gaming consoles, the AS4C256M16D3L-12BCN provides high-speed memory for multimedia processing. Its 4Gbit capacity supports HD video streaming and multitasking, while the 1.35V supply helps meet energy efficiency standards. The 96-FBGA package is compact, fitting into slim device designs. The memory is used for buffering video frames and storing application data, with the parallel interface ensuring high throughput. The low power consumption is beneficial for always-on devices, and the RoHS compliance meets environmental regulations.
Recommended
Data Storage Systems
In NAS and SSD controllers, the AS4C256M16D3L-12BCN serves as cache memory, providing fast access to frequently used data. Its 4Gbit capacity and 800MHz speed enable high throughput, while the 1.35V operation reduces power in storage devices that run 24/7. The parallel interface connects directly to the controller, and the low voltage helps meet energy efficiency requirements. The memory's reliability is crucial for data integrity, and the FBGA package offers good thermal performance in dense storage arrays.
Recommended
Test and Measurement
The AS4C256M16D3L-12BCN is used in oscilloscopes and signal analyzers for high-speed data acquisition and waveform storage. Its 4Gbit capacity allows capturing long records, and the 800MHz clock supports fast sampling rates. The 1.35V supply reduces power in portable instruments. The memory is interfaced with FPGAs or DSPs, providing high bandwidth for real-time processing. The low voltage and compact package make it suitable for benchtop and handheld devices, where space and power are limited.
Recommended
Recommended Products Summary
Engineering reference data for AS4C256M16D3L-12BCN β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | AS4C256M16D3LB-12BCN | AS4C256M16D3A-12BCN | AS4C256M16D3-12BCN | MT41K256M16HA-125 | IS43TR16512B-125KBLI | K4B4G1646E-BYMA |
|---|---|---|---|---|---|---|---|
| Package | 96-FBGA (9x13 mm) | 96-FBGA (9x13 mm) | 96-FBGA (9x13 mm) | 96-FBGA (9x13 mm) | 96-FBGA (9x13 mm) | 96-FBGA (9x13 mm) | 96-FBGA (9x13 mm) |
| Brand | Alliance Memory | Alliance Memory | Alliance Memory | Alliance Memory | Micron Technology | ISSI | Samsung Electronics |
| Memory Size | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35 V | 1.35 V | 1.35 V | 1.5 V | 1.35 V | 1.35 V | 1.35 V |
| Max Clock Frequency | 800 MHz | 800 MHz | 800 MHz | 800 MHz | 800 MHz | 800 MHz | 800 MHz |
| CAS Latency | 20 ns | 20 ns | 20 ns | 20 ns | 13.75 ns | 13.75 ns | 13.75 ns |
| RoHS | Compliant | Compliant | Compliant | Compliant | Compliant | Compliant | Compliant |
Key Differentiators
- Low voltage operation (1.35V) reduces power consumption by up to 20% compared to standard DDR3 (vs AS4C256M16D3-12BCN)
- Pin-compatible with multiple cross-brand DDR3L 4Gbit parts (vs MT41K256M16HA-125)
- RoHS compliant and halogen-free (vs K4B4G1646E-BYMA)
Design Notes
For high-speed DDR3L routing, maintain controlled impedance of 40-50 ohms for DQ/DQS signals and 50-60 ohms for address/command signals. Keep trace lengths matched within +/- 0.5mm for each byte lane. Use ground planes beneath the memory area to reduce noise. Refer to the Alliance Memory layout guidelines in the datasheet for specific recommendations.
Decouple VDD and VDDQ with 0.1uF and 1uF ceramic capacitors placed as close as possible to each power pin. Use a bulk capacitor of 10uF near the memory. Ensure the 1.35V supply has low ripple (<50mV) and adequate current capability. The VDDQ supply should be separate or well-filtered to avoid noise coupling.
The AS4C256M16D3L-12BCN has a maximum operating temperature of 95C (Tc). For high-density systems, ensure adequate airflow or a heatsink to keep the case temperature below this limit. The FBGA package has a thermal resistance of approximately 20C/W, so power dissipation of 2W would raise the case temperature by 40C above ambient.
Compliance Information
RoHS compliant and halogen-free per datasheet. Not AEC-Q100 qualified.