K4B4G1646E-BCNB vs H5TQ4G63AFR-H9C Comparison
Detailed side-by-side comparison of K4B4G1646E-BCNB by Samsung Electronics and H5TQ4G63AFR-H9C by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4B4G1646E-BCNB - 4Gb DDR3 SDRAM, 256Mx16, 1.35V | Samsung
K4B4G1646E-BCNB β Active
Specification Comparison
| Parameter | K4B4G1646E-BCNB | H5TQ4G63AFR-H9C |
|---|---|---|
| Brand | Samsung Electronics | SK hynix |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $13.52 | $6.50 |
| Memory Type | DDR3 SDRAM | DDR3 SDRAM |
| Memory Size | 4 Gb | β |
| Organization | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35 V (1.283 V to 1.45 V) | 1.5 V |
| Data Rate | 1866 Mbps | 3.9 Gbps per pin (approx) |
| CAS Latency | [DATA_NEEDED: CAS Latency] | β |
| Operating Temperature | 0C to +95C | β |
| Package | 96-ball FBGA | 96-ball TFBGA |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | β |
| Number of Pins | 96 | β |
| Interface Type | Parallel | β |
| Refresh | 8K / 64 ms | β |
| Burst Length | 8, 4 (fixed) | β |
| Write Recovery Time | [DATA_NEEDED: tWR] | β |
| Row Cycle Time | [DATA_NEEDED: tRC] | β |
| Row Address Strobe to Column Address Strobe Delay | [DATA_NEEDED: tRCD] | β |
| Row Precharge Time | [DATA_NEEDED: tRP] | β |
| Active to Precharge Time | [DATA_NEEDED: tRAS] | β |
| Density | β | 4 Gb |
| Clock Speed (tCK) | β | 0.255 ns |
| Package Shape | β | RECTANGULAR |
| Refresh Cycles | β | 8192 |
| Number of Terminals | β | 96 |
| Temperature Grade | β | OTHER |
| RoHS | β | Compliant |
| Halogen Free | β | Yes |
| Ball Pitch | β | 0.8 mm |