K4B4G1646E-BCNB vs MT41K256M16TW-107 Comparison
Detailed side-by-side comparison of K4B4G1646E-BCNB by Samsung Electronics and MT41K256M16TW-107 by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4B4G1646E-BCNB - 4Gb DDR3 SDRAM, 256Mx16, 1.35V | Samsung
K4B4G1646E-BCNB β Active
Specification Comparison
| Parameter | K4B4G1646E-BCNB | MT41K256M16TW-107 |
|---|---|---|
| Brand | Samsung Electronics | Micron Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $13.52 | $14.10 |
| Memory Type | DDR3 SDRAM | DDR3L SDRAM |
| Memory Size | 4 Gb | 4 Gbit |
| Organization | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35 V (1.283 V to 1.45 V) | 1.35 V |
| Data Rate | 1866 Mbps | β |
| CAS Latency | [DATA_NEEDED: CAS Latency] | β |
| Operating Temperature | 0C to +95C | 0C to +95C (commercial :P grade) |
| Package | 96-ball FBGA | 96-FBGA (8x14 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | [DATA_NEEDED: RoHS status] |
| Number of Pins | 96 | β |
| Interface Type | Parallel | β |
| Refresh | 8K / 64 ms | β |
| Burst Length | 8, 4 (fixed) | β |
| Write Recovery Time | [DATA_NEEDED: tWR] | β |
| Row Cycle Time | [DATA_NEEDED: tRC] | β |
| Row Address Strobe to Column Address Strobe Delay | [DATA_NEEDED: tRCD] | β |
| Row Precharge Time | [DATA_NEEDED: tRP] | β |
| Active to Precharge Time | [DATA_NEEDED: tRAS] | β |
| Interface | β | Parallel |
| Clock Frequency | β | 933 MHz (DDR3L-1866) |
| Access Time | β | 20 ns |
| Data Bus Width | β | 16 bit |
| Auto Self-Refresh | β | Yes |
| Auto Precharge | β | Yes |
| Asynchronous Reset | β | Yes |
| Data Mask | β | Yes |
| Write Leveling | β | Yes |
| Dynamic On-Die Termination | β | Yes |
| ZQ Calibration | β | Yes |
| MSL Level | β | [DATA_NEEDED: MSL level] |