K4B4G1646E-BCNB vs W634GU6RB11I Comparison
Detailed side-by-side comparison of K4B4G1646E-BCNB by Samsung Electronics and W634GU6RB11I by Winbond. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4B4G1646E-BCNB - 4Gb DDR3 SDRAM, 256Mx16, 1.35V | Samsung
K4B4G1646E-BCNB β ActiveSpecification Comparison
| Parameter | K4B4G1646E-BCNB | W634GU6RB11I |
|---|---|---|
| Brand | Samsung Electronics | Winbond |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $13.52 | $1.95 |
| Memory Type | DDR3 SDRAM | DDR3L SDRAM |
| Memory Size | 4 Gb | 4Gbit (256M x 16) |
| Organization | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35 V (1.283 V to 1.45 V) | 1.35V |
| Data Rate | 1866 Mbps | β |
| CAS Latency | [DATA_NEEDED: CAS Latency] | 11 (at 933 MHz) |
| Operating Temperature | 0C to +95C | -40Β°C to +95Β°C (Industrial) |
| Package | 96-ball FBGA | 96-VFBGA (7.5x13) |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant |
| Number of Pins | 96 | β |
| Interface Type | Parallel | β |
| Refresh | 8K / 64 ms | Auto and Self Refresh |
| Burst Length | 8, 4 (fixed) | β |
| Write Recovery Time | [DATA_NEEDED: tWR] | β |
| Row Cycle Time | [DATA_NEEDED: tRC] | β |
| Row Address Strobe to Column Address Strobe Delay | [DATA_NEEDED: tRCD] | β |
| Row Precharge Time | [DATA_NEEDED: tRP] | β |
| Active to Precharge Time | [DATA_NEEDED: tRAS] | β |
| Interface | β | Parallel |
| Clock Frequency | β | 933 MHz |
| Access Time | β | 20 ns |
| Data Bus Width | β | 16 bit |
| Halogen Free | β | Yes |