K4B4G1646E-BMMA vs K4B4G1646E-BYMA Comparison
Detailed side-by-side comparison of K4B4G1646E-BMMA by Samsung Electronics and K4B4G1646E-BYMA by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4B4G1646E-BMMA
K4B4G1646E-BMMA - 4Gb DDR3L SDRAM 256Mx16 | Samsung
K4B4G1646E-BMMA β Active
Specification Comparison
| Parameter | K4B4G1646E-BMMA | K4B4G1646E-BYMA |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $15.70 | $14.32 |
| Memory Type | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4 Gb | 4 Gb |
| Organization | 256M x 16 | 256M x 16 |
| Data Rate | 1600 Mbps | 1866 Mbps/pin |
| Supply Voltage | 1.35 V | 1.35 V (1.28 V to 1.575 V) |
| Operating Temperature | -40Β°C to +95Β°C | 0Β°C to +95Β°C |
| Package | 96-FBGA (9x13 mm) | FBGA-96 |
| Number of Banks | 8 | β |
| Interface | Parallel | β |
| Clock Frequency | 800 MHz | 933 MHz |
| CAS Latency | [DATA_NEEDED: CAS Latency] | [DATA_NEEDED: CAS Latency] |
| Burst Length | 8, 4 (with burst chop) | [DATA_NEEDED: Burst Length] |
| On-Die Termination | Yes (Dynamic ODT) | β |
| ZQ Calibration | Yes | β |
| RoHS | Compliant | Compliant |
| Lead-Free | Yes | β |
| Operating Current | β | 14 mA |
| Standby Current | β | 2 mA, 3 mA |
| Mounting Type | β | Surface Mount |
| Number of Pins | β | 96 |