K4B4G1646E-BYMATCV vs K4B4G1646D-BYMA0 Comparison
Detailed side-by-side comparison of K4B4G1646E-BYMATCV by Samsung Electronics and K4B4G1646D-BYMA0 by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4B4G1646E-BYMATCV - 4Gb DDR3L SDRAM 96-FBGA | Samsung
K4B4G1646E-BYMATCV ✓ ActiveSamsung Electronics
K4B4G1646D-BYMA0 - 4Gb DDR3L SDRAM x16 96FBGA | Samsung
K4B4G1646D-BYMA0 ✓ ActiveSpecification Comparison
| Parameter | K4B4G1646E-BYMATCV | K4B4G1646D-BYMA0 |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Memory Type | DDR3L SDRAM | DDR3L SDRAM |
| Memory Size | 4 Gbit (256M x 16) | — |
| Data Rate | 1866 Mbps | 1866 Mbps (PC3-14900) |
| Supply Voltage | 1.35 V | 1.35 V |
| I/O Voltage (VDDQ) | 1.35 V | — |
| Package | 96-ball FBGA | 96-ball FBGA |
| Number of Pins | 96 | — |
| Operating Temperature Range | -40°C to +95°C | 0°C to +85°C |
| Number of Banks | 8 | — |
| Burst Length | 8 (with burst chop 4) | — |
| CAS Latency | Programmable (e.g., 13, 12, 11) | — |
| On-Die Termination (ODT) | Yes | — |
| Auto Precharge | Yes | Supported |
| Self-Refresh | Yes | — |
| RoHS Status | Compliant | — |
| Organization | — | 256M x 16 |
| Total Memory Size | — | 4 Gb |
| Lead-Free | — | Yes |
| Halogen Free | — | Yes |
| RoHS Compliant | — | Yes |
| Asynchronous Reset | — | Supported |
| ZQ Calibration | — | Supported |
| Data Mask | — | Supported |
| Dynamic On-Chip Termination | — | Supported |