K4RBH165VB-BCQK vs K4RBH086VB-BCWM Comparison
Detailed side-by-side comparison of K4RBH165VB-BCQK by Samsung Electronics and K4RBH086VB-BCWM by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4RBH086VB-BCWM - DDR5 16Gb DRAM 2Gx8 FBGA-82 | Samsung
K4RBH086VB-BCWM ✓ ActiveSpecification Comparison
| Parameter | K4RBH165VB-BCQK | K4RBH086VB-BCWM |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.00 | $0.00 |
| Memory Type | DDR5 SDRAM | DDR5 SDRAM |
| Memory Size | 16 Gb | — |
| Organization | 1G x 16 | 2G x 8 |
| Data Rate | 4800 Mbps/pin | [DATA_NEEDED: data rate for K4RBH speed grade (sister K4RAH086VB grade is 5600 Mbps)] |
| Speed Grade | BCQK (4800 Mbps) | — |
| Operating Temperature | 0 C to +85 C | 0 C to 85 C |
| Self Refresh | Auto self-refresh | — |
| Reset Function | Asynchronous reset | — |
| Error Correction | On-chip (on-die) ECC | — |
| Write Leveling | Yes | — |
| CRC Function | Yes | — |
| ZQ Calibration | Yes | — |
| Supply Voltage | [DATA_NEEDED: core supply voltage (VDD), nominally 1.1 V for DDR5] | 1.1 V |
| Package Type | [DATA_NEEDED: exact package code, expected FBGA surface mount] | — |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Burst Length | [DATA_NEEDED: burst length (BL16 per DDR5 standard)] | — |
| Density | — | 16 Gb |
| Interface | — | Parallel, DDR5 |
| Package | — | 82-FBGA |
| Product Status | — | Mass Production |
| Memory Format | — | Volatile (DRAM) |
| Technology | — | DDR5 SDRAM |
| Manufacturer | — | Samsung Semiconductor |
| MSL Level | — | [DATA_NEEDED: moisture sensitivity level] |
| On-Die ECC | — | Yes (per JEDEC DDR5 specification) |