K4RBH165VB-BCQK - DDR5 16Gb 4800Mbps DRAM | Samsung
MPN: K4RBH165VB-BCQK ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0 | $0.00 |
| 10 | $0 | $0.00 |
| 100 | $0 | $0.00 |
| 500 | $0 | $0.00 |
| 1,000 | $0 | $0.00 |
Drop-in alternatives for K4RBH165VB-BCQK — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
K4RAH165VB-BCQK
✅ Drop-In✓ In Stock
Contact for price
View Datasheet →K4RAH165VB-BCWM
✅ Drop-In✓ In Stock
$9.92 / Unit
View Datasheet →K4RAH165VP-BCWM
✅ Drop-In✓ In Stock
$8.34 / Unit
View Datasheet →K4RBH086VB-BCQK
✅ Drop-In ⚠️ 参数待验证✓ In Stock
Contact for price
View Datasheet →K4RBH086VB-BCWM
✅ Drop-In ⚠️ 参数待验证✓ In Stock
Contact for price
View Datasheet →K4RHE165VB-BCWM
✅ Drop-In ⚠️ 参数待验证✓ In Stock
Contact for price
View Datasheet →K4RAH086VB-BCQK
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$6.75 / Unit
View Datasheet →K4RBH165VB-BCQK Maximum Ratings & Electrical Characteristics
| Memory Type | DDR5 SDRAM |
| Memory Size | 16 Gb |
| Organization | 1G x 16 |
| Data Rate | 4800 Mbps/pin |
| Speed Grade | BCQK (4800 Mbps) |
| Operating Temperature | 0 C to +85 C |
| Self Refresh | Auto self-refresh |
| Reset Function | Asynchronous reset |
| Error Correction | On-chip (on-die) ECC |
| Write Leveling | Yes |
| CRC Function | Yes |
| ZQ Calibration | Yes |
| Mounting Type | Surface Mount |
K4RBH165VB-BCQK [data_needed: exact package code, expected fbga surface mount] Pin Configuration Guide
Complete pinout information for K4RBH165VB-BCQK ([data_needed: exact package code, expected fbga surface mount] package). This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.
![[data_needed: exact package code, expected fbga surface mount] package pinout diagram for K4RBH165VB-BCQK](/assets/package-diagrams/default.svg?v=1788069619)
No detailed pinout data available for K4RBH165VB-BCQK.
Refer to the datasheet for full pin configuration.
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
K4RBH165VB-BCQK is suitable for 6 applications: Server RDIMM Modules, Client Desktop and Workstation UDIMMs, Networking and Communication Equipment, High-Performance Computing Accelerator Cards, Test and Measurement Instrumentation, Embedded and Industrial Computing Platforms.
Server RDIMM Modules
The K4RBH165VB-BCQK fits server Registered DIMM (RDIMM) designs where 16 Gb DDR5 components at 4800 Mbps/pin deliver mainstream data-center bandwidth. Its x16 organization maximizes capacity per package, reducing component count on the module and improving yield, while on-die ECC and CRC functions sustain data integrity across dense ranks. Placed in x16-based rank topologies with the module PMIC regulating the low-voltage core supply, the device supports the DDR5-4800 rates standard for current Intel and AMD server platforms. The 0 C to +85 C operating range covers data-center ambient conditions, and ZQ calibration maintains output impedance accuracy across temperature for reliable multi-rank signaling.
Recommended
Client Desktop and Workstation UDIMMs
In desktop and workstation unbuffered DIMMs, the K4RBH165VB-BCQK provides 16 Gb per component at DDR5-4800, enabling high-capacity modules with fewer devices per rank. The 1G x 16 organization suits two-rank consumer module layouts, and asynchronous reset plus auto self-refresh simplify power-state transitions in client platforms that spend substantial time in low-power states. On-die ECC raises effective reliability for workstations running long simulations without needing module-level ECC logic. Designers should follow JEDEC DDR5 routing rules for DQ/CA length matching and use the device's write leveling to close timing across the module's fly-by command bus at 4800 Mbps.
Recommended
Networking and Communication Equipment
Switches, routers, and 5G infrastructure line cards use 16 Gb DDR5 components like the K4RBH165VB-BCQK for packet buffering, queue management, and control-plane storage. The 4800 Mbps/pin rate supplies the bandwidth needed to keep pace with multi-hundred-gigabit forwarding pipelines, while CRC and on-die ECC protect buffered data in always-on network equipment. The x16 organization reduces the number of memory devices per card, easing layout congestion around the forwarding ASIC. Asynchronous reset supports rapid re-initialization after line-card faults, and the 0 C to +85 C range fits well-ventilated telecom shelves.
Recommended
High-Performance Computing Accelerator Cards
GPU and AI accelerator companion memory subsystems use DDR5 components such as the K4RBH165VB-BCQK for weight storage, activation buffers, and host-transfer staging. The 16 Gb density allows multi-gigabyte local memory per card with a compact BGA population, and the 4800 Mbps data rate sustains the sustained read/write throughput that AI inference and training workloads demand. On-die ECC is particularly valuable in long-running training jobs where uncorrected memory errors would corrupt model state. Designers must budget the approximately 1.1 V core rail with the on-DIMM/on-card PMIC and verify thermal performance under sustained full-bandwidth traffic within the 0 C to +85 C window.
Recommended
Test and Measurement Instrumentation
Oscilloscopes, logic analyzers, and protocol analyzers require deep, high-bandwidth capture memory, making 16 Gb DDR5 parts like the K4RBH165VB-BCQK a cost-effective fit. The 4800 Mbps/pin rate supports streaming high-sample-rate data into capture buffers, while the 1G x 16 organization allows building multi-gigabyte record lengths from a modest component count. Auto self-refresh enables retaining capture data through instrument standby states, and ZQ calibration keeps I/O impedance accurate across the instrument's warm-up and ambient drift. The commercial 0 C to +85 C range suits benchtop instruments; extended-range variants should be selected for field-deployed testers.
Recommended
Embedded and Industrial Computing Platforms
Industrial PCs, edge servers, and embedded controllers use soldered-down or SODIMM-based DDR5 such as the K4RBH165VB-BCQK for main memory. The 16 Gb component provides the density edge platforms need for AI-at-the-edge inference and video analytics while keeping the BOM compact. On-die ECC improves reliability in unattended 24/7 operation, and auto self-refresh supports rapid-resume low-power modes in battery-backed edge nodes. Designers should validate signal integrity at 4800 Mbps on their carrier PCB using Samsung's DDR5 design guide, and note that the commercial 0 C to +85 C rating requires derating in high-temperature sealed enclosures.
Recommended
Recommended Products Summary
Engineering reference data for K4RBH165VB-BCQK — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | K4RAH165VB-BCQK | K4RAH165VB-BCWM | K4RBH086VB-BCQK | K4RHE165VB-BCWM |
|---|---|---|---|---|---|
| Package | BGA (DDR5 16Gb x16 package family) | BGA (same DDR5 x16 package family) | BGA (same DDR5 x16 package family) | BGA (same DDR5 x16 package family) | BGA (same DDR5 x16 package family) |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Density | 16 Gb | 16 Gb | 16 Gb | 8 Gb | 16 Gb |
| Organization | 1G x 16 | 1G x 16 | 1G x 16 | 512M x 16 | 1G x 16 |
| Data Rate | 4800 Mbps/pin | 4800 Mbps/pin | [DATA_NEEDED: WM speed bin data rate] | 4800 Mbps/pin | [DATA_NEEDED: WM speed bin data rate] |
| On-die ECC | Yes | Yes | Yes (DDR5 standard feature) | Yes (DDR5 standard feature) | Yes (DDR5 standard feature) |
| Operating Temperature | 0 C to +85 C | 0 C to +85 C | 0 C to +85 C | [DATA_NEEDED] | [DATA_NEEDED] |
| Lifecycle Status | Active | Active (5140 pcs stock, Aug 31 2026) | Active | Active | Active |
Key Differentiators
- 16 Gb density doubles per-component capacity vs 8 Gb siblings (vs K4RBH086VB-BCQK)
- 4800 Mbps BCQK speed grade over WM-bin parts (vs K4RAH165VB-BCWM)
- On-die ECC reduces system-level error exposure (vs Legacy DDR4 parts such as K4A8G165WB-BCWE)
Design Notes
DDR5 moves power management off the memory controller and onto the module or board via a dedicated PMIC. Estimated: at DDR5-4800 with a 1.1 V-class core rail, idle-to-active current swing on a rank of 16 Gb x16 devices can exceed several amps per rail; size the PMIC and its output capacitance per the JEDEC DDR5 PMIC specification and Samsung's recommended decoupling, and verify power-integrity (PDN impedance) across the device's operating frequency range before tape-out.
At 4800 Mbps/pin, DDR5 relies on DFE (decision feedback equalization) receivers, write leveling, CA parity, and CRC to close timing and data integrity. Match DQ/DQS and CA trace lengths per Samsung's DDR5 design guide, do not port DDR4 termination rules, and enable ZQ calibration with the recommended external precision resistor. Simulate the full channel (controller, package, PCB, DRAM) with DDR5 IBIS-AMI models obtained from Samsung.
Do not assume drop-in compatibility between Samsung die revisions (RAH vs RBH) without checking the ordering-code table in the official datasheet; the RAH/B prefix encodes die/process revision and parameters can shift between revisions. Also confirm the speed grade suffix (QK vs WM) matches your controller's supported rate, and note the 0 C to +85 C commercial temperature range - it excludes automotive and extended-industrial deployments.
Compliance Information
Compliance status not stated in retrieved data; request Samsung environmental compliance certificates via RFQ.
