K4RHE086VB-BCWM vs K4RAH086VE-BCWM Comparison
Detailed side-by-side comparison of K4RHE086VB-BCWM by Samsung Electronics and K4RAH086VE-BCWM by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4RAH086VE-BCWM - DDR5 16Gb 5600Mbps DRAM | Samsung Electronics
K4RAH086VE-BCWM ✓ ActiveSpecification Comparison
| Parameter | K4RHE086VB-BCWM | K4RAH086VE-BCWM |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $7.65 | $7.60 |
| Memory Type | DDR5 SDRAM | DDR5 SDRAM |
| Density | 24 Gb | 16 Gb |
| Organization | 2G x 8 | 2G x 8 |
| Data Rate | 5600 Mbps | 5600 Mbps |
| Supply Voltage | 1.1 V | — |
| Package | 82 FBGA | 82-ball FBGA |
| Mounting Type | Surface Mount | Surface Mount |
| Interface | DDR5 (JEDEC) | — |
| Configuration | x8 | — |
| Application Segment | Server / Data Center / Premium PC | — |
| Manufacturer | Samsung Semiconductor | Samsung Electronics |
| RoHS Status | unknown | [DATA_NEEDED: RoHS status] |
| Operating Temperature | [DATA_NEEDED: operating temperature range] | 0C to +85C |
| Access Time / CAS Latency | [DATA_NEEDED: CAS latency] | — |
| On-Die ECC | [DATA_NEEDED: on-die ECC support] | — |
| Package Height | [DATA_NEEDED: package height] | — |
| Supply Voltage (VDD) | — | 1.1 V |
| Generation | — | DDR5 |
| Bank Groups | — | [DATA_NEEDED: bank group count] |
| CAS Latency | — | [DATA_NEEDED: CL at 5600 Mbps] |
| VDDQ Voltage | — | [DATA_NEEDED: VDDQ value] |
| Refresh | — | [DATA_NEEDED: refresh rate] |
| Lifecycle Status | — | Mass Production |