K4RHE086VB-BCWM - 24Gb DDR5 5600Mbps DRAM | Samsung
MPN: K4RHE086VB-BCWM ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $9.8 | $9.80 |
| 10 | $9.2 | $92.00 |
| 100 | $8.6 | $860.00 |
| 500 | $8.1 | $4,050.00 |
| 1,000 | $7.65 | $7,650.00 |
Drop-in alternatives for K4RHE086VB-BCWM — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
K4RAH086VB-BCWM
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View Datasheet →K4RAH086VP-BCWM
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View Datasheet →K4RAH086VB-BIWM
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View Datasheet →K4RAH086VB-BCQK
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View Datasheet →K4RAH086VE-BCWM
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View Datasheet →K4RAH086VB-BIQK
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View Datasheet →K4RHE086VB-BCWM Maximum Ratings & Electrical Characteristics
| Memory Type | DDR5 SDRAM |
| Density | 24 Gb |
| Organization | 2G x 8 |
| Data Rate | 5600 Mbps |
| Supply Voltage | 1.1 V |
| Package | 82 FBGA |
| Mounting Type | Surface Mount |
| Interface | DDR5 (JEDEC) |
| Configuration | x8 |
| Application Segment | Server / Data Center / Premium PC |
| Manufacturer | Samsung Semiconductor |
| RoHS Status | unknown |
K4RHE086VB-BCWM [data_needed: package height] Pin Configuration Guide
Complete pinout information for K4RHE086VB-BCWM ([data_needed: package height] package). This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.
![[data_needed: package height] package pinout diagram for K4RHE086VB-BCWM](/assets/package-diagrams/default.svg?v=1788069619)
No detailed pinout data available for K4RHE086VB-BCWM.
Refer to the datasheet for full pin configuration.
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
K4RHE086VB-BCWM is suitable for 6 applications: Data Center Server Memory, Premium Desktop PCs, Professional Workstations, Industrial Systems Requiring Long-Term Availability, Networking and Communication Equipment, Embedded and Edge AI Computing.
Data Center Server Memory
The K4RHE086VB-BCWM fits data center server DIMM designs where the 24Gb (2G x 8) density enables 3GB per chip, allowing RDIMM capacities up to 33% higher than 16Gb-based modules at the same chip count. Its 5600 Mbps data rate supports DDR5-5600-class server memory controllers from current Intel Xeon and AMD EPYC platforms, while the 1.1V supply aligns with DDR5 on-DIMM power management for improved efficiency. Placed as the core DRAM device on RDIMM or LRDIMM assemblies, it delivers the bandwidth and capacity cloud and enterprise workloads demand; designers must validate controller training firmware for 24Gb dies and follow Samsung DDR5 layout guidance for fly-by routing and decoupling.
Recommended
Premium Desktop PCs
In premium desktop platforms, the K4RHE086VB-BCWM provides 24Gb per device at 5600 Mbps, letting UDIMM makers build high-capacity consumer modules (for example 48GB with 16 chips) without increasing device count. The 1.1V DDR5 operation cuts module power versus DDR4, benefiting thermally constrained small-form-factor gaming and creator PCs, and the x8 organization keeps the address/command bus loading favorable for two-DIMM-per-channel desktop topologies. The 82-FBGA package supports the dense ball-out breakout typical of consumer DIMM PCBs. Integrators should confirm the platform BIOS supports 24Gb die training, since early DDR5 desktop firmware generations capped at 16Gb per die.
Recommended
Professional Workstations
Professional workstation memory subsystems benefit from the K4RHE086VB-BCWM's combination of 24Gb density and 5600 Mbps bandwidth: content-creation, CAD, and simulation workloads are frequently memory-capacity bound, and 3GB-per-chip density maximizes capacity within standard ECC UDIMM/RDIMM footprints. The 1.1V supply reduces steady-state module heat, improving acoustic and thermal margins in quiet workstation enclosures. Samsung positions this DDR5 generation specifically for professional workstations alongside data centers, per distributor product descriptions. Validation points include ECC operation in the platform memory controller, 24Gb-aware training code, and signal-integrity sign-off for four-DIMM, two-channel configurations at DDR5-5600.
Recommended
Industrial Systems Requiring Long-Term Availability
Industrial controllers, edge servers, and networking appliances that specify DDR5 benefit from the K4RHE086VB-BCWM where long-term supply continuity is a procurement requirement: SourceMemoryChips notes this part is widely deployed in industrial systems where long-term availability is required, and independent distributors held 17400-29650 pieces in stock through mid-2026. The 5600 Mbps rate gives headroom for future CPU refreshes on the same board, and 1.1V operation eases industrial power-supply design. Same-family 16Gb siblings (K4RAH086 series) provide drop-in-footprint fallbacks if the 24Gb density is EOL'd first. Buyers should negotiate last-time-buy terms and qualify both densities in the design phase.
Recommended
Networking and Communication Equipment
Routers, switches, and 5G infrastructure line cards require high-bandwidth buffering memory, and the K4RHE086VB-BCWM's 5600 Mbps x8 interface supplies the packet-buffer and lookup-table capacity such designs need. The 24Gb density reduces chip count per board, cutting BOM cost and ball-field routing complexity on dense line-card PCBs, while DDR5's improved power efficiency lowers the thermal budget of fanless or constrained networking hardware. When designing the memory subsystem, engineers should follow the platform vendor's fly-by routing rules, maintain length-matched byte lanes, and provision the 1.1V rail with low-impedance decoupling across the 82-FBGA array to sustain multi-gigabit signaling margins.
Recommended
Embedded and Edge AI Computing
Edge AI accelerators and high-performance embedded modules increasingly adopt DDR5 for model and frame-buffer memory. The K4RHE086VB-BCWM provides 3GB per device, allowing COM Express, SMARC, or custom carrier boards to reach 12-24GB of soldered-down memory with only 4-8 chips, preserving board area for NPUs and power circuitry. The 1.1V rail suits battery-backed and fanless edge enclosures, and 5600 Mbps sustains the bandwidth needed for real-time inference pipelines. Design teams must ensure the SoC memory controller supports 24Gb x8 DDR5 dies and should validate training at the target temperature range, leveraging Samsung's same-package 16Gb parts as capacity-flexible alternates.
Recommended
Recommended Products Summary
Engineering reference data for K4RHE086VB-BCWM — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | K4RAH086VB-BCWM | K4RAH086VP-BCWM | K4RAH086VB-BIWM | K4RAH086VE-BCWM |
|---|---|---|---|---|---|
| Package | 82 FBGA | 82 FBGA - same | 82 FBGA - same | 82 FBGA - same | 82 FBGA - same |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Density | 24 Gb | 16 Gb | 16 Gb | 16 Gb | 16 Gb |
| Organization | 2G x 8 | x8 (16Gb) | x8 (16Gb) | x8 (16Gb) | x8 (16Gb) |
| Data Rate | 5600 Mbps | 5600 Mbps | 5600 Mbps | 5600 Mbps | 5600 Mbps |
| Supply Voltage | 1.1 V | 1.1 V | 1.1 V | 1.1 V | 1.1 V |
| Memory Generation | DDR5 SDRAM | DDR5 SDRAM | DDR5 SDRAM | DDR5 SDRAM | DDR5 SDRAM |
| Capacity per Chip | 3 GB | 2 GB | 2 GB | 2 GB | 2 GB |
| Reported Stock | 29650 pcs (Wolfchip, Aug 19 2026) | 27700 pcs (icDirectory, Aug 31 2026) | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
Key Differentiators
- Highest density in the 82-FBGA DDR5 family: 24Gb per die (vs K4RAH086VB-BCWM)
- Same speed class as the 16Gb siblings (vs K4RAH086VE-BCWM)
- Different package from the x16 sibling (vs K4RHE165VB-BCWM)
Design Notes
At 5600 Mbps, DDR5 signal margins depend heavily on fly-by command/address routing and byte-lane length matching within the 82-FBGA breakout. Follow the platform vendor memory layout guideline (Intel/AMD server design guides) for DQ/DQS intra-byte skew of a few mils and matched CA fly-by stubs. DDR5 relies on decision-feedback equalization (DFE) on-die and controller-side training; ensure your firmware runs full read/write leveling per Samsung DDR5 application guidance. Estimated: even 10 mm of un-matched stub at 5600 Mbps (UI ~179 ps) can consume a significant fraction of the eye budget.
The K4RHE086VB-BCWM operates from a 1.1V rail per the DDR5 standard. Provision the 1.1V PDN with bulk capacitance at the PMIC and distributed low-ESL ceramic decoupling across the 82-ball array. DDR5 modules use on-DIMM 12V-to-1.1V power management ICs; for soldered-down designs select a DDR5-certified PMIC. Samsung states DDR5 delivers roughly 30% better power efficiency than DDR4, but idle and self-refresh currents still dominate in servers - enable per-bank refresh and power-down features in the controller to realize this efficiency.
The most common integration failure is controller training firmware that does not recognize 24Gb dies. The K4RHE086VB-BCWM is a 24Gb (2G x 8) device; early DDR5 platforms trained only to 16Gb. Update BIOS/memory-training code and verify the platform memory QVL before committing to this density. Also, do not substitute the x16 sibling K4RHE165VB-BCWM on an x8 board - it uses a 106-ball package and a different ballout, and is not footprint-compatible despite the same 24Gb capacity and speed class.
Break out the 82-FBGA ball field using via-in-pad or dog-bone fanout per Samsung DDR5 package layout recommendations, keeping DQ escape lengths balanced within each byte lane. Use at least one solid reference plane adjacent to the signal layers and avoid splitting the return path under DQ/DQS routing. Place the DRAM within the controller's specified flight-time window when multiple ranks are populated, since write-leveling compensates but cannot remove gross topological mismatch.
Compliance Information
Compliance data was not present in the provided verified web data. Samsung DDR5 components are generally RoHS-compliant but this must be confirmed from the official Samsung product page or datasheet before design-in.
