K9PRGY8S7M vs K9DVGY8J5M Comparison
Detailed side-by-side comparison of K9PRGY8S7M by Samsung Electronics and K9DVGY8J5M by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K9PRGY8S7M - Samsung NAND Flash Memory IC | Samsung Electronics
K9PRGY8S7M ✓ ActiveSpecification Comparison
| Parameter | K9PRGY8S7M | K9DVGY8J5M |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.00 | $1.00 |
| Memory Type | NAND Flash | — |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| Density | [DATA_NEEDED: density] | [DATA_NEEDED: die density (Gb)] |
| Organization | [DATA_NEEDED: organization] | — |
| Interface Type | [DATA_NEEDED: interface type] | [DATA_NEEDED: interface (toggle DDR / async)] |
| Supply Voltage | [DATA_NEEDED: supply voltage] | — |
| Page Size | [DATA_NEEDED: page size] | — |
| Block Size | [DATA_NEEDED: block size] | — |
| Program/Erase Cycles | [DATA_NEEDED: P/E cycles] | — |
| Access Time | [DATA_NEEDED: access time] | — |
| Package Type | BGA (surface mount) | [DATA_NEEDED: package type and dimensions] |
| Package Pin/Ball Count | [DATA_NEEDED: ball count] | — |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | [DATA_NEEDED: operating temperature] | [DATA_NEEDED: operating temperature range] |
| RoHS Status | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| MSL Level | [DATA_NEEDED: MSL level] | — |
| Product Type | — | Raw NAND Flash Memory |
| NAND Technology | — | Samsung V-NAND (3D TLC) |
| Flash ID | — | EC519A3F8CCB |
| Organization (Page/Block) | — | [DATA_NEEDED: page and block organization] |
| Supply Voltage (VCC) | — | [DATA_NEEDED: VCC voltage] |
| Supply Voltage (VCCQ) | — | [DATA_NEEDED: VCCQ voltage] |
| Program Page Time (tPROG) | — | [DATA_NEEDED: tPROG typical/us] |
| Block Erase Time (tBERS) | — | [DATA_NEEDED: tBERS typical/us] |
| Read Time (tR) | — | [DATA_NEEDED: tR typical/us] |
| Program/Erase Endurance | — | [DATA_NEEDED: P/E cycle endurance] |