K9DVGY8J5M - Samsung V-NAND TLC Flash Memory Chip | Samsung
MPN: K9DVGY8J5M ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1 | $1.00 |
| 10 | $1 | $10.00 |
| 100 | $1 | $100.00 |
| 500 | $1 | $500.00 |
| 1,000 | $1 | $1,000.00 |
Drop-in alternatives for K9DVGY8J5M — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
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K9DVGB8U5M
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View Datasheet →K9PRGY8S7M
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View Datasheet →K9PKGY8S7M-CCK0
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$9.4 / Unit
View Datasheet →K9HQGY8S5M
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View Datasheet →K9ADGD8S0A
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View Datasheet →K9DVGY8J5M Maximum Ratings & Electrical Characteristics
| Manufacturer | Samsung Electronics |
| Product Type | Raw NAND Flash Memory |
| NAND Technology | Samsung V-NAND (3D TLC) |
| Flash ID | EC519A3F8CCB |
| Mounting Type | Surface Mount |
K9DVGY8J5M [data_needed: package type and dimensions] Pin Configuration Guide
Complete pinout information for K9DVGY8J5M ([data_needed: package type and dimensions] package). This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.
![[data_needed: package type and dimensions] package pinout diagram for K9DVGY8J5M](/assets/package-diagrams/default.svg?v=1788069619)
No detailed pinout data available for K9DVGY8J5M.
Refer to the datasheet for full pin configuration.
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
K9DVGY8J5M is suitable for 6 applications: Client and Enterprise SSD Assemblies, Embedded Storage Modules (eMMC/UFS Assembly), Industrial Storage Cards and Removable Media, Data Center Storage Appliances, SSD Repair, Refurbishment, and Data Recovery, Consumer Electronics Storage (TVs, Set-Top Boxes, Routers).
Client and Enterprise SSD Assemblies
The K9DVGY8J5M serves as raw TLC V-NAND storage in client and enterprise SSD builds, where multiple dies are stacked and mounted onto an SSD PCB paired with an NVMe or SATA controller. Samsung V-NAND TLC technology provides the multi-terabyte capacity and multi-plane parallelism that SSD controllers exploit for high sequential throughput and IOPS. In this role the die's Flash ID (EC519A3F8CCB) is read at power-up so the controller loads matching timing, geometry, and LDPC ECC parameters. Designers should budget spare area for TLC ECC overhead and implement SLC caching to absorb write bursts while protecting TLC endurance.
Recommended
Embedded Storage Modules (eMMC/UFS Assembly)
Raw V-NAND dies such as the K9DVGY8J5M are mounted inside eMMC and UFS managed-storage packages, where a Samsung or third-party controller adds the flash translation layer, wear leveling, and ECC before presenting a managed interface. This die-level integration lets module houses select density and cost points while reusing qualified controller firmware. The key engineering task is verifying that the module controller's Flash ID table includes EC519A3F8CCB and that page/block geometry matches the firmware's expected layout. TLC endurance characteristics must align with the module's target application class (consumer, industrial, or automotive).
Recommended
Industrial Storage Cards and Removable Media
Industrial-grade SD, CFast, and proprietary storage-card builds use raw TLC NAND dies like the K9DVGY8J5M paired with card controllers that implement static wear leveling, power-loss protection, and strong ECC. Samsung V-NAND's stacked-cell architecture delivers high density within the limited PCB area of a card, while the die's toggle-mode interface supports the throughput industrial logging and data-recorder applications demand. Designers should derate TLC endurance for continuous-write industrial profiles, configure card controllers with the correct EC519A3F8CCB Flash ID entry, and validate retention across the full industrial temperature profile.
Recommended
Data Center Storage Appliances
Storage appliances and JBOD systems integrate arrays of SSDs built on raw V-NAND dies such as the K9DVGY8J5M. At data center scale, per-gigabyte cost and supply continuity of the underlying NAND drive BOM decisions, making Samsung's K9-family die an anchor component. The die's multi-plane architecture allows controllers to parallelize reads and writes across planes, lifting random IOPS for virtualization and database workloads. Procurement teams should secure the Samsung NDA datasheet for timing and endurance data and dual-source qualification with K9DVGB8U5M to hedge against NAND market allocation cycles.
Recommended
SSD Repair, Refurbishment, and Data Recovery
Independent repair and refurbishment channels use K9-series raw NAND dies, including the K9DVGY8J5M, to replace failed or worn flash on SSD PCBs and storage modules during component-level repair. Successful swaps require matching the Flash ID expectations of the resident controller firmware, migrating or rebuilding the bad-block and wear-leveling metadata, and validating the replacement die's geometry. The FlashInfo-verified Flash ID EC519A3F8CCB is the primary reference for confirming a genuine Samsung die before soldering, making ID verification the first step in any board-level NAND replacement workflow.
Recommended
Consumer Electronics Storage (TVs, Set-Top Boxes, Routers)
Consumer electronics platforms that record video, cache content, or store firmware use modules assembled from raw TLC V-NAND dies like the K9DVGY8J5M. The die's TLC density keeps per-unit BOM cost low while providing gigabytes of writable storage for DVR functions and app caching. Because these hosts typically use an integrated storage controller with a fixed Flash ID table, designers must confirm EC519A3F8CCB support or select a K9-family die already covered by the SoC vendor's qualified NAND list. TLC endurance is adequate for consumer duty cycles when controllers apply SLC caching and background garbage collection.
Recommended
Recommended Products Summary
Engineering reference data for K9DVGY8J5M — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | K9DVGB8U5M | K9PRGY8S7M | K9PKGY8S7M-CCK0 |
|---|---|---|---|---|
| Package | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| NAND Technology | Samsung V-NAND TLC | Samsung V-NAND TLC | Samsung V-NAND TLC | Samsung V-NAND TLC |
| Flash ID | EC519A3F8CCB | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Die Density | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Interface | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| P/E Endurance | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Lifecycle Status | Active | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
Key Differentiators
- Verified Flash ID provenance (vs K9DVGB8U5M)
- Same-family controller compatibility (vs K9PRGY8S7M)
- 3D V-NAND TLC density economics (vs K9HQGY8S5M)
Design Notes
Raw toggle-DDR NAND interfaces are source-synchronous buses: match trace lengths within the controller's specified skew window for DQ, DQS/RE, and CLE/ALE groups, and route CE/R signals away from DQ switching to limit crosstalk. Keep stubs under the package's transmission-line limit and terminate per the controller reference design. When stacking multiple K9-family dies on one bus, verify the shared-bus capacitive load still meets the datasheet slew-rate requirements at the target mode speed.
Decouple VCC and VCCQ independently at each NAND die: place a 100 nF ceramic capacitor within 2 mm of each supply pin plus bulk capacitance of at least 10 uF per die group. TLC program operations draw transient current peaks on VCCQ; insufficient decoupling shows up as program-disturb or ECC-fail symptoms that are difficult to isolate from firmware issues. Separate the NAND rails from switching-regulator output ripple with a ferrite bead if a shared DC-DC rail is unavoidable.
The most frequent raw NAND integration failure is a Flash ID mismatch: the controller reads the ID bytes (EC519A3F8CCB for this part) at init and must have a matching geometry, timing, and ECC profile in its firmware table, or the device fails to enumerate or corrupts data. Always confirm the exact Flash ID with the physical die - ordering-code suffixes within the K9 family encode different organizations. Also verify the substitution part's package pinout against the Samsung datasheet before assuming drop-in compatibility.
Compliance Information
Compliance data was not present in the verified public web data for this MPN; Samsung raw NAND components are generally RoHS-compliant but this must be confirmed from official Samsung documentation.
