K9XXG08UXM vs K9LCG08U1M Comparison
Detailed side-by-side comparison of K9XXG08UXM by Samsung Electronics and K9LCG08U1M by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | K9XXG08UXM | K9LCG08U1M |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Flash |
| Lifecycle Status | Obsolete | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.00 | $11.85 |
| Memory Size | 2G x 8 Bit (2Gb) | — |
| Memory Cell Array Organization | (1G + 32M) bit x 8 bit | — |
| Data Register | (2K + 64) bit x 8 bit | — |
| Supply Voltage | 2.7 V to 3.6 V | [DATA_NEEDED: supply voltage] |
| Page Size | (2K + 64) Byte | [DATA_NEEDED: page size] |
| Block Size | (256K + 8K) Byte | [DATA_NEEDED: block size] |
| Program Operation | Automatic Page Program, (2K + 64) Byte | — |
| Erase Operation | Automatic Block Erase, (256K + 8K) Byte | — |
| I/O Interface | 8-bit multiplexed address/data/command | — |
| Control Signals | CLE, ALE, CE, RE, WE, WP, R/B | — |
| Cell Type | SLC (single-level cell) NAND | MLC (2 bits per cell) |
| Package | 48-pin TSOP | BGA |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | [DATA_NEEDED: Operating Temperature] | [DATA_NEEDED: operating temperature range] |
| Access Time (tR) | [DATA_NEEDED: Access Time] | — |
| RoHS Status | [DATA_NEEDED: RoHS Status] | unknown |
| Memory Type | — | NAND Flash, MLC |
| Density | — | 64 Gbit (8 GB) |
| Organization | — | x8 I/O |
| Interface | — | Asynchronous multiplexed NAND I/O |
| Page Read Time | — | [DATA_NEEDED: page read time] |
| Page Program Time | — | [DATA_NEEDED: page program time] |
| Block Erase Time | — | [DATA_NEEDED: block erase time] |
| Endurance | — | [DATA_NEEDED: program/erase cycles] |
| Ordering Codes | — | K9LCG08U1M-LCB0 / K9LCG08U1M-LCB00 / K9LCG08U1M-LCB |