Samsung Electronics

K9LCG08U1M - 64Gbit MLC NAND Flash | Samsung | SSD Storage

MPN: K9LCG08U1M ✓ Active
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[DATA_NEEDED: supply voltage] Vdss BGA Package NAND Flash, MLC Memory
From $11.85 USD / Unit
MOQ: 1 |
Price updated: 2026-09-03
Volume Pricing
Qty Unit Price Extended
1 $13.5 $13.50
10 $12.95 $129.50
100 $12.6 $1,260.00
500 $12.2 $6,100.00
1,000 $11.85 $11,850.00
ℹ️ All prices are in USD

Drop-in alternatives for K9LCG08U1M — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.

Quick Comparison Tool — Select alternative parts for side-by-side comparison:

K9HCG08U1M

✅ Drop-In
Samsung Electronics
📦 BGA
MLC NAND Flash · 64 Gbit · 8G x 8 · 8 bit · Asynchronous NAND (multiplexed address/data/command) · [DATA_NEEDED: supply voltage] · [DATA_NEEDED: page size] · [DATA_NEEDED: block size]

✓ In Stock

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K9XXG08U0M

✅ Drop-In
Samsung Electronics
📦 BGA
NAND Flash · 8 G-bit · 1G x 8 bit · 256 M-bit (per K9K8G08U0M) · 2.7 V to 3.6 V (3.3V device) · 8-bit parallel NAND (command/address/data multiplexed) · 20 us · 48-pin TSOP-I

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$5.6 / Unit

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K9XXG08UXM

✅ Drop-In
Samsung Electronics
📦 BGA
2G x 8 Bit (2Gb) · (1G + 32M) bit x 8 bit · (2K + 64) bit x 8 bit · 2.7 V to 3.6 V · (2K + 64) Byte · (256K + 8K) Byte · Automatic Page Program, (2K + 64) Byte · Automatic Block Erase, (256K + 8K) Byte

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K9HQGY8S5M

✅ Drop-In
Samsung Electronics
📦 BGA
Samsung Electronics · 3D V-NAND Flash Memory (stacked, client NAND) · 316-ball Fine Pitch BGA (FBGA-316) · 4 x K9ADGD8S0A V-NAND dies (per TechInsights package analysis) · 32-layer pMLC 3D V-NAND (per Samsung 850 Pro 256 GB analysis) · Non-volatile NAND flash · NAND (ONFI/Toggle-style asynchronous interface) - exact timing mode [DATA_NEEDED: interface timing mode] · [DATA_NEEDED: total bit density]

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K9F2808Q0B

✅ Drop-In
Samsung Electronics
📦 BGA
SLC NAND Flash (parallel) · 128 Mbit · 16M x 8 · 1.7 V to 1.95 V · 50 ns · SLC (1 bit/cell) · 8-bit multiplexed address/data · 63-pin TBGA

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K9LCG08U1M Maximum Ratings & Electrical Characteristics

Memory Type NAND Flash, MLC
Density 64 Gbit (8 GB)
Organization x8 I/O
Interface Asynchronous multiplexed NAND I/O
Cell Type MLC (2 bits per cell)
Package BGA
Mounting Type Surface Mount
RoHS Status unknown
Ordering Codes K9LCG08U1M-LCB0 / K9LCG08U1M-LCB00 / K9LCG08U1M-LCB

K9LCG08U1M bga Pin Configuration Guide

Complete pinout information for K9LCG08U1M (bga package) with 48 pins. This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.

bga package pinout diagram for K9LCG08U1M

No detailed pinout data available for K9LCG08U1M.

Refer to the datasheet for full pin configuration.

Estimated pin count: 48 pins (digital package)

Safe Operating Area (SOA) & Thermal Characteristics

Safe Operating Area Chart Default safe operating area chart for K9LCG08U1M Drain-to-Source Voltage (Vds) Drain Current (Id)

No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.

Typical Applications

K9LCG08U1M is suitable for 6 applications: Solid State File Storage, Industrial Embedded Storage, Set-Top Boxes and Consumer Electronics, Portable and Battery-Powered Devices, Storage Module and eMMC Subsystem Design, Data Logging and Event Recorders.

🖥️

Solid State File Storage

The K9LCG08U1M's 64 Gbit MLC density in a compact BGA makes it a fit for solid state file storage systems where large non-volatile capacity per package is the priority. Supplier documentation explicitly positions it as an optimum solution for such applications. In a typical SSD or storage-module architecture, multiple NAND packages connect to a controller over the multiplexed NAND bus, with the controller handling BCH or LDPC ECC, interleaved multi-die operation, and wear leveling to manage MLC endurance. Because MLC stores two bits per cell, the cost per gigabyte is roughly half that of SLC, but the controller must budget for higher bit-error rates and longer program times. Designers should parallelize several packages to increase effective bandwidth beyond a single die's read throughput.

🏭

Industrial Embedded Storage

Industrial controllers, gateways, and data loggers need reliable non-volatile code and data storage, and the K9LCG08U1M provides 8 GB of MLC NAND in a surface-mount BGA suitable for compact industrial boards. In these designs, the NAND typically stores the file system, firmware images, and logging data behind a controller implementing power-fail protection, bad-block remapping, and wear leveling. The MLC cell type keeps cost per bit low, which matters in cost-sensitive industrial volumes, but designers must verify the ordering code's temperature range in the Samsung datasheet and select a wide-temperature suffix for harsh environments. Decoupling capacitors on the NAND supply rail and clean power sequencing during brownout events are essential to prevent data corruption.

📺

Set-Top Boxes and Consumer Electronics

Set-top boxes, smart TVs, and networked consumer devices use high-density NAND like the K9LCG08U1M for channel databases, application storage, and DVR buffering. The 64 Gbit MLC device offers the capacity these platforms need at consumer price points, and its standard asynchronous NAND interface connects directly to mainstream SoCs with built-in NAND controllers and hardware ECC. The controller's LDPC or BCH engine handles MLC error rates, while firmware wear leveling sustains the write endurance demanded by DVR-style recording workloads. The BGA package supports the compact two-layer to four-layer PCB constructions typical of consumer hardware. Designers should confirm the speed-grade suffix timing matches the SoC NAND controller's supported interface timing modes before layout.

📱

Portable and Battery-Powered Devices

Portable applications requiring non-volatility - handheld terminals, test instruments, and mobile accessories - benefit from the K9LCG08U1M's combination of high density and low per-bit cost. Supplier listings describe the device as an optimum solution for portable applications requiring non-volatility. In battery-powered designs, the NAND's standby current draw is negligible relative to the system, and the asynchronous interface avoids the power cost of a high-speed memory bus. The BGA footprint keeps board area small for thin form factors. Because MLC program operations take longer than SLC, firmware should buffer writes in RAM and batch them to reduce erase cycles, directly extending battery-adjacent storage lifetime and improving perceived responsiveness of the device.

🖥️

Storage Module and eMMC Subsystem Design

Designers building storage modules - raw-NAND cards, industrial SD-like modules, or custom eMMC-class subsystems - can build around multiple K9LCG08U1M packages. Density denoted by Samsung's K9 nomenclature allows parallel dies for capacity aggregation: a controller exposing an SD, eMMC, or SATA front end manages four to eight NAND packages with interleaving to multiply bandwidth. The MLC architecture's endurance is handled through dynamic and static wear leveling plus over-provisioning, typically 7% or more of capacity. The identical command set across Samsung's K9 family lets one firmware image support multiple bill-of-material densities, simplifying product SKUs. Verify ball-map compatibility when mixing K9LCG08U1M with other family parts on the same PCB footprint.

🎥

Data Logging and Event Recorders

Event recorders, black-box loggers, and telemetry systems require storage that survives power loss and years of cyclic writing. The K9LCG08U1M's 8 GB MLC array supports extensive logging histories, and its non-volatile cells retain data without power indefinitely. A logging controller writes fixed-record blocks into NAND pages, using bad-block tables and wear leveling to spread erase cycles evenly; at moderate write rates this extends service life well beyond typical mission intervals. The multiplexed NAND interface needs only modest controller GPIO resources, suiting cost-sensitive recorder hardware. Because sudden power removal can corrupt an in-progress program operation, firmware must implement write-verify and journaling so that the last valid record is always recoverable.

What is the K9LCG08U1M and what is it used for?
The K9LCG08U1M is a Samsung 64 Gbit (8 GB) MLC NAND flash memory IC in a BGA package. It is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility, per supplier documentation. Like all raw NAND devices, it requires a host controller providing ECC, bad-block management, and wear leveling. Ordering codes include K9LCG08U1M-LCB0 and K9LCG08U1M-LCB00.
What is the price of K9LCG08U1M?
As of 2026-09-04, distributor listings for K9LCG08U1M-LCB00 range approximately US$12 to US$13.50 per unit in small quantities, per the SeekIC listing (august8ic) at US$12-13.5. XAIPART tier pricing starts at $13.50 at qty 1, dropping to about $11.85 at qty 1000. Large-quantity pricing requires an RFQ through stocking distributors such as Censtry or Win Source, which list the part as in stock with 180-day warranty.
Where to buy K9LCG08U1M online?
The K9LCG08U1M can be purchased online from stocking distributors including Win Source (K9LCG08U1M-LCB), Censtry (K9LCG08U1M-LCB0 and LCB00, with 180 days warranty on new original parts), Jotrin Electronics (LCB00), Nantian Electronics, and YIC Electronics. Octopart aggregates 4 distributors for the LCB0 suffix for price comparison. XAIPART also supplies this part via RFQ with tiered quantity pricing.
Where to download the K9LCG08U1M datasheet PDF?
A K9LCG08U1M datasheet PDF is available at abc-semi.com/datasheets/K9LCG08U1M.pdf, and Jotrin Electronics and YIC Electronics also host datasheet PDFs for the LCB0/LCB00 ordering codes. Because this is a Samsung proprietary NAND device, the most authoritative source is Samsung Semiconductor's official product documentation portal; always confirm timing and voltage parameters against the datasheet matching your exact speed-grade suffix.
Is K9LCG08U1M the same as K9LCG08U1M-LCB00?
Yes - K9LCG08U1M-LCB00 is a full ordering code of the K9LCG08U1M base device; the base MPN alone is an incomplete ordering reference. The suffix encodes package, speed grade, and packing information (LCB0, LCB00, LCB variants appear across distributors). Electrically the silicon is the same 64 Gbit MLC NAND, but you should order and design to the exact full ordering code, since timing and voltage grades can differ between suffixes.
What are the key specifications of K9LCG08U1M that engineers should know?
Engineers should know: K9LCG08U1M is a Samsung 64 Gbit (8 GB) MLC NAND flash in a BGA package with a standard asynchronous multiplexed NAND I/O interface (x8 organization per supplier listings). Exact page size, block size, supply voltage, read/program/erase timings, and P/E endurance vary by speed-grade suffix and are defined in the Samsung datasheet - verify these against the LCB0/LCB00 ordering code before design-in. Raw MLC NAND requires controller-managed ECC and wear leveling.
What is the difference between K9LCG08U1M and K9HCG08U1M?
Both are Samsung high-density MLC NAND devices in the K9xCG08U1M family sharing the same x8 asynchronous NAND interface architecture. The distinguishing character is the density designator: the 'L' versus 'H' position in the part number denotes different density/process generations within Samsung's NAND roadmap, with the K9HCG08U1M being a higher-capacity variant. Package style and command set are family-consistent; exact density, page/block organization, and timing differ and must be confirmed from each device's datasheet.
What is the best drop-in replacement for K9LCG08U1M?
For a same-footprint drop-in replacement, the closest candidates are other Samsung K9-family MLC NAND devices in matching BGA packages, such as K9HCG08U1M and other K9xCG08UxM family members. Because Samsung does not publish a formal cross-reference, any substitution must be validated by comparing ball map, density, page/block organization, and timing against the datasheets of both parts. No cross-brand pin-compatible equivalent is documented in available web data for this part.
Can K9HCG08U1M replace K9LCG08U1M in my design?
Potentially, but only after verification. K9HCG08U1M is a same-brand Samsung family part with a compatible NAND command interface, but density, page/block organization, and AC timing parameters differ from the K9LCG08U1M. Your NAND controller must be reconfigured for the substitute's geometry, and the ONFI or datasheet timing must be checked against your read/write cycle budget. We recommend board-level validation of read, program, and erase operations before committing to the swap in production.
Does K9LCG08U1M need ECC and wear leveling?
Yes. As MLC (2-bits-per-cell) NAND, the K9LCG08U1M exhibits higher raw bit-error rates than SLC and limited program/erase endurance. Per standard NAND practice, the host controller must implement ECC (typically BCH or LDPC), bad-block management, and wear-leveling firmware. Skipping ECC on MLC NAND leads to uncorrectable data corruption; this is a controller requirement, not an option, and applies to all K9 MLC family devices including the LCB0/LCB00 ordering codes.
Is K9LCG08U1M in stock?
Yes - multiple independent distributors list K9LCG08U1M variants as in stock as of 2026-09-04. Censtry lists both K9LCG08U1M-LCB0 and K9LCG08U1M-LCB00 as new and original with 180 days warranty; Win Source lists the K9LCG08U1M-LCB with stock and RFQ options; Octopart shows 4 distributors offering the LCB0 suffix. Note these are independent/stocking distributors rather than Samsung franchise distribution, so verify date codes and provenance on receipt.
What is the lead time for K9LCG08U1M?
Stocked distributors (Censtry, Win Source, Jotrin, Nantian) typically ship K9LCG08U1M variants within days since parts are listed as in stock as of 2026-09-04. If ordering directly through Samsung's authorized channel or for production volumes, Samsung NAND lead times historically range 8-16 weeks depending on demand cycles. For volume requirements, request formal quotes from multiple stocking distributors and compare date codes, as excess inventory channels can offer immediate delivery.
Is K9LCG08U1M suitable for industrial embedded storage applications?
Yes, with caveats. The K9LCG08U1M is positioned for large nonvolatile storage applications such as solid state file storage, which covers industrial embedded storage modules. However, as raw MLC NAND it demands a robust controller with strong ECC, wear leveling, and temperature-aware management. Check the operating temperature range of your specific ordering code in the Samsung datasheet, since consumer-grade suffixes may not cover the full industrial -40C to +85C range; a wide-temperature suffix should be selected for harsh environments.
What is the best Samsung equivalent for K9LCG08U1M from the same family?
Within Samsung's own catalog, the closest same-family equivalents are K9HCG08U1M (higher-density sibling in the K9xCG08U1M family) and other K9-family x8 MLC NAND devices such as the K9XXG08U0M and K9XXG08UXM series. Samsung does not publish an official cross-reference table, so equivalence must be verified by comparing ball maps, organization, and datasheet timing. All of these use the standard Samsung NAND command set, which simplifies controller firmware migration between family members.
What package does the K9LCG08U1M use and how is it mounted?
The K9LCG08U1M is supplied in a BGA (ball grid array) surface-mount package per multiple distributor listings (YIC Electronics describes it as a 'SAMSUNG BGA' specialized IC). BGA mounting requires reflow soldering with a controlled thermal profile and X-ray or AOI inspection of solder joints after assembly. The exact ball count and ball pitch for your ordering code must be taken from the Samsung package drawing in the datasheet, as high-density NAND BGAs commonly use fine-pitch ball layouts.

Engineering reference data for K9LCG08U1M — comparison, design guidance, and compliance information.

Selection Guide

Choose the K9LCG08U1M when you need roughly 8 GB (64 Gbit) of MLC NAND with proven availability from multiple stocking distributors and a standard asynchronous NAND interface - ideal for solid state file storage, industrial logging, and consumer set-top designs. Choose K9HCG08U1M if your capacity requirement exceeds 64 Gbit and your controller firmware already supports the higher-density family member; both share Samsung's command set, easing migration. Choose K9XXG08U0M or K9XXG08UXM when a different generation's speed grade better matches your controller timing budget. Choose K9HQGY8S5M only for new designs targeting the latest Samsung NAND generation and willing to verify a possibly different ball map. Avoid K9F2808Q0B for new designs - it is a legacy, much lower-density part suited only to small configuration/code storage. In all cases, order by the full ordering code (LCB0/LCB00) and confirm temperature grade from the datasheet.

Comparison with Alternatives

Parameter This Product K9HCG08U1M K9XXG08U0M K9XXG08UXM K9HQGY8S5M K9F2808Q0B
Package BGA BGA BGA BGA BGA BGA
Brand Samsung Electronics Samsung Electronics Samsung Electronics Samsung Electronics Samsung Electronics Samsung Electronics
Cell Type MLC MLC [DATA_NEEDED] [DATA_NEEDED] [DATA_NEEDED] [DATA_NEEDED]
I/O Organization x8 x8 x8 x8 [DATA_NEEDED] x8
Interface Asynchronous NAND Asynchronous NAND Asynchronous NAND Asynchronous NAND [DATA_NEEDED] Asynchronous NAND
Typical Unit Price (qty 1) $13.50 (as of 2026-09-04) [DATA_NEEDED] [DATA_NEEDED] [DATA_NEEDED] [DATA_NEEDED] [DATA_NEEDED]
Target Application Solid state file storage, portable non-volatile storage High-density solid state storage Embedded NAND storage Embedded NAND storage High-density NAND generation Legacy code/data storage
Lifecycle Status Active (independent distributor stock) Active Active Active Active Legacy

Key Differentiators

  • 64 Gbit MLC density balances cost and capacity (vs K9F2808Q0B)
  • Same-family migration path within Samsung K9 catalog (vs K9HCG08U1M)
  • MLC cost structure versus higher-density newer generations (vs K9HQGY8S5M)

Design Notes

Never operate the K9LCG08U1M without ECC. As MLC NAND, raw bit-error rates are substantially higher than SLC, and the Samsung datasheet assumes controller-managed error correction (BCH or LDPC) sized for the device's page size. Additionally, always build to the complete ordering code (LCB0, LCB00, or LCB) rather than the bare base MPN, because timing and voltage grades are encoded in the suffix. Ordering on the base MPN alone risks receiving a speed grade incompatible with your controller timing configuration.

The BGA package requires reflow soldering - hand soldering is not feasible. Follow the Samsung datasheet reflow profile limits and inspect solder joints with X-ray or AOI, since NAND BGAs hide voids beneath the die area. Place 100 nF ceramic decoupling capacitors within 2-3 mm of each supply ball, plus bulk 10 uF capacitance per package. Keep the multiplexed command/data/address bus traces length-matched where multiple NAND packages share the bus, and add series termination on long I/O lines to control ringing at fast read cycles.

Implement power-fail protection in the storage firmware: an interrupted MLC program operation can corrupt the target page, so design the system to detect brownout (via a supply supervisor), flush controller RAM buffers, and mark the interrupted block for later verification and remapping. Estimated: NAND program current is modest, but simultaneous program across multiple stacked dies can create transient load steps - size the bulk capacitance for the aggregate inrush of all dies programming in interleaved mode.

On shared NAND buses with multiple K9-family packages, ensure only the selected device drives I/O during read cycles; contention from an un-tri-stated device corrupts data. Verify that pull-up resistors on R/B (ready/busy) lines are sized so rise times meet your controller's timing budget when several devices share one R/B line in stacked configurations.

Compliance Information

RoHS
Unknown
REACH
Unknown
AEC-Q100
Not Applicable
Lead Free
Unknown
Halogen Free
Unknown
Conflict Minerals
Unknown

Compliance status not stated in the provided web data; obtain declarations from Samsung or the stocking distributor.

Data verified on: 2026-09-04 — data verified and curated by XAIPART's component engineering team

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Related Components & Terms

Samsung Electronics K9LCG08U1M K9LCG08U1M-LCB0 K9LCG08U1M-LCB00 K9HCG08U1M K9XXG08U0M K9XXG08UXM K9HQGY8S5M NAND flash MLC multi-level cell non-volatile memory BGA package solid state storage asynchronous NAND interface ECC error-correcting code wear leveling RoHS memory IC semiconductor
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