M29F400FT55M3E2 vs M29F800FT55N3E2 Comparison

Detailed side-by-side comparison of M29F400FT55M3E2 by Micron Technology and M29F800FT55N3E2 by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Micron Technology
M29F400FT55M3E2 M29F400FT55M3E2 - 4Mbit 55ns 5V Parallel NOR Flash | Micron

M29F400FT55M3E2 - 4Mbit 55ns 5V Parallel NOR Flash | Micron

M29F400FT55M3E2 ✓ Active
Micron Technology
M29F800FT55N3E2 M29F800FT55N3E2 - 8Mb 5V Parallel NOR Flash 55ns | Micron

M29F800FT55N3E2 - 8Mb 5V Parallel NOR Flash 55ns | Micron

M29F800FT55N3E2 ✓ Active

Specification Comparison

Parameter M29F400FT55M3E2 M29F800FT55N3E2
Brand Micron Technology Micron Technology
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.98 $4.98
Memory Type NOR Flash NOR Flash
Memory Size 4 Mbit (4194 kbits) —
Organization 512K x 8 / 256K x 16 —
Interface Parallel Parallel
Access Time 55 ns 55 ns
Supply Voltage 5 V 5 V
Number of Words 256 k —
Bits per Word 16 bits —
Programming Embedded byte/word program algorithms —
Erase Embedded program/erase controller, block erase —
Boot Block Top boot block —
Operating Temperature -40 C to +125 C -40C to +125C
Package 44-SO (SOP-44) 48-TSOP I
Mounting Type Surface Mount Surface Mount
Packaging Tray —
RoHS Status Compliant Compliant (E suffix = lead-free/RoHS)
Memory Organization — 512K x 16 (8 Mbit)
Density — 8389 kbits
Boot Block Architecture — Top Boot Block
Word/Byte Configuration — BYTE# pin selectable (16-bit / 8-bit)
Hardware Reset / Power-Down — RP# pin
Embedded Program/Erase Controller — Yes (byte/word program, block erase)
Program/Erase Endurance — 100,000 cycles per block (typical for family)
Data Retention — >20 years (typical for family)
Ready/Busy Output — Yes

Datasheets & Resources

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