M29F800FT55M3E2 vs M29F200FT55M3F2 Comparison

Detailed side-by-side comparison of M29F800FT55M3E2 by Micron Technology and M29F200FT55M3F2 by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Micron Technology
M29F800FT55M3E2 M29F800FT55M3E2 - 8Mbit 55ns 5V Parallel NOR Flash | Micron

M29F800FT55M3E2 - 8Mbit 55ns 5V Parallel NOR Flash | Micron

M29F800FT55M3E2 ✓ Active
Micron Technology
M29F200FT55M3F2 M29F200FT55M3F2 - 2Mbit 55ns 5V NOR Flash | Micron | Automotive

M29F200FT55M3F2 - 2Mbit 55ns 5V NOR Flash | Micron | Automotive

M29F200FT55M3F2 ✓ Active

Specification Comparison

Parameter M29F800FT55M3E2 M29F200FT55M3F2
Brand Micron Technology Micron Technology
Category EEPROM Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $3.95 $1.85
Memory Type NOR Flash Parallel NOR Flash
Memory Size 8 Mbit —
Organization 512K x 16 bit 256K x 8 / 128K x 16
Interface Parallel —
Access Time 55 ns 55 ns
Supply Voltage 5 V —
Operating Temperature -40C to +125C -40C to +125C
Boot Block Location Top boot block —
Program/Erase Cycles 100,000 per block —
Program Algorithm Embedded byte/word program —
Erase Features Erase suspend and resume —
Standby Mode Automatic standby, low power —
Identification Electronic signature —
Package 44-SO (SOP) 44-pin SO (TSOP)
Mounting Type Surface Mount Surface Mount
RoHS Status Compliant (E suffix) [DATA_NEEDED: RoHS status]
Density 8389 kbits 2 Mbit (2097 kbits)
Supply Voltage (VCC) — 5 V
Boot Block Architecture — Top Boot Block
Programming Interface — Embedded program/erase controller, byte or word
Automotive Qualification — Yes
Packaging — Tape & Reel (T/R)
Number of Words (x16 mode) — 128 K
Bits per Word (x16 mode) — 16 bits
Program/Erase Endurance — [DATA_NEEDED: program/erase cycles]

Datasheets & Resources

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