M29F800FT55M3F2 vs M29F400FT55N3F2 Comparison

Detailed side-by-side comparison of M29F800FT55M3F2 by Micron Technology and M29F400FT55N3F2 by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Micron Technology
M29F800FT55M3F2 M29F800FT55M3F2 - 8Mbit 5V Parallel NOR Flash 55ns | Micron

M29F800FT55M3F2 - 8Mbit 5V Parallel NOR Flash 55ns | Micron

M29F800FT55M3F2 ✓ Active
Micron Technology
M29F400FT55N3F2 M29F400FT55N3F2 - 4Mbit 5V Parallel NOR Flash 55ns | Micron

M29F400FT55N3F2 - 4Mbit 5V Parallel NOR Flash 55ns | Micron

M29F400FT55N3F2 ✓ Active

Specification Comparison

Parameter M29F800FT55M3F2 M29F400FT55N3F2
Brand Micron Technology Micron Technology
Category Memory ICs EEPROM
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $2.10 $1.51
Memory Type Parallel NOR Flash NOR Flash (SLC)
Density 8 Mbit (8389 kbits) —
Organization 512K x 16 / 1M x 8 256K x 16
Access Time 55 ns 55 ns
Supply Voltage (VCC) 5 V —
Boot Block Position Top boot block —
Programming Interface Embedded program/erase controller —
Operating Temperature -40C to +125C [DATA_NEEDED: min operating temperature]
Package 44-pin SO (SOP) 44-SO (SOP-44)
Mounting Type Surface Mount Surface Mount
Packaging Tape & Reel (TR) —
Interface Parallel, x8/x16 selectable Parallel
Standby Current [DATA_NEEDED: standby current] —
Program/Erase Endurance [DATA_NEEDED: endurance cycles] [DATA_NEEDED: endurance cycles]
RoHS Status Compliant (lead-free suffix F2) —
Memory Size — 4 Mbit
Supply Voltage — 5 V
Block Architecture — Top boot block
Temperature Grade — Auto Grade 3, up to +125C (per Micron ordering code)
Compliance Suffix — F2 (RoHS-compliant, lead-free plating)
Programming Voltage — Single supply (no 12 V VPP required)
Technology — Floating-gate NOR cell, charge-pump program/erase
Max Standby Current — [DATA_NEEDED: standby current]

Datasheets & Resources

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