M29F800FT55N3F2 vs M29F160FT55N3F2 Comparison
Detailed side-by-side comparison of M29F800FT55N3F2 by Micron Technology and M29F160FT55N3F2 by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Micron Technology
M29F160FT55N3F2 - 16Mbit 5V 55ns NOR Flash | Micron Technology
M29F160FT55N3F2 ✓ ActiveSpecification Comparison
| Parameter | M29F800FT55N3F2 | M29F160FT55N3F2 |
|---|---|---|
| Brand | Micron Technology | Micron Technology |
| Category | Memory ICs | Flash |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.78 | $4.90 |
| Memory Type | NOR Flash, Parallel | NOR Flash (Parallel, Asynchronous) |
| Memory Size | 8 Mbit | — |
| Organization | 1M x 8 bit / 512K x 16 bit | 1M x 16 / 2M x 8 |
| Supply Voltage | 5 V (single supply) | — |
| Access Time | 55 ns | 55 ns |
| Interface | Parallel | Parallel |
| Boot Block Architecture | Top boot block (T) | — |
| Programming Voltage | 5.0 V VCC (no 12 V VPP required) | — |
| Package | 48-pin TSOP | 48-Pin TSOP |
| Mounting Type | Surface Mount | Surface Mount |
| Packaging | Tape & Reel (T/R) | Tape & Reel |
| Operating Temperature | [DATA_NEEDED: operating temperature range] | -40C to +125C |
| Erase Block Size | [DATA_NEEDED: block size] | — |
| Data Retention | [DATA_NEEDED: data retention] | — |
| Program/Erase Cycles | [DATA_NEEDED: endurance cycles] | — |
| RoHS Status | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Active Read Current | [DATA_NEEDED: ICC read] | — |
| Density | — | 16 Mbit (16777 kbits) |
| Number of Words | — | 1000 k |
| Bits per Word | — | 16 bits |
| Supply Voltage (VCC) | — | 5 V (operating 4.5 V) |
| Synchronous / Asynchronous | — | Asynchronous |
| Boot Block Location | — | Top boot block (FT) |
| Program / Erase | — | Embedded byte/word program algorithms (controller on-chip) |
| MSL Level | — | [DATA_NEEDED: moisture sensitivity level] |