M29F800FT55N3F2 vs M29F800FT55M3F2 Comparison
Detailed side-by-side comparison of M29F800FT55N3F2 by Micron Technology and M29F800FT55M3F2 by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Micron Technology
M29F800FT55M3F2 - 8Mbit 5V Parallel NOR Flash 55ns | Micron
M29F800FT55M3F2 ✓ ActiveSpecification Comparison
| Parameter | M29F800FT55N3F2 | M29F800FT55M3F2 |
|---|---|---|
| Brand | Micron Technology | Micron Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.78 | $2.10 |
| Memory Type | NOR Flash, Parallel | Parallel NOR Flash |
| Memory Size | 8 Mbit | — |
| Organization | 1M x 8 bit / 512K x 16 bit | 512K x 16 / 1M x 8 |
| Supply Voltage | 5 V (single supply) | — |
| Access Time | 55 ns | 55 ns |
| Interface | Parallel | Parallel, x8/x16 selectable |
| Boot Block Architecture | Top boot block (T) | — |
| Programming Voltage | 5.0 V VCC (no 12 V VPP required) | — |
| Package | 48-pin TSOP | 44-pin SO (SOP) |
| Mounting Type | Surface Mount | Surface Mount |
| Packaging | Tape & Reel (T/R) | Tape & Reel (TR) |
| Operating Temperature | [DATA_NEEDED: operating temperature range] | -40C to +125C |
| Erase Block Size | [DATA_NEEDED: block size] | — |
| Data Retention | [DATA_NEEDED: data retention] | — |
| Program/Erase Cycles | [DATA_NEEDED: endurance cycles] | — |
| RoHS Status | [DATA_NEEDED: RoHS status] | Compliant (lead-free suffix F2) |
| Active Read Current | [DATA_NEEDED: ICC read] | — |
| Density | — | 8 Mbit (8389 kbits) |
| Supply Voltage (VCC) | — | 5 V |
| Boot Block Position | — | Top boot block |
| Programming Interface | — | Embedded program/erase controller |
| Standby Current | — | [DATA_NEEDED: standby current] |
| Program/Erase Endurance | — | [DATA_NEEDED: endurance cycles] |