M29F800FT55N3F2 vs M29F800FT55M3F2 Vergleich
Detaillierter Direktvergleich von M29F800FT55N3F2 von Micron Technology und M29F800FT55M3F2 von Micron Technology. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Micron Technology
M29F800FT55M3F2 - 8Mbit 5V Parallel NOR Flash 55ns | Micron
M29F800FT55M3F2 ✓ AktivSpezifikationsvergleich
| Parameter | M29F800FT55N3F2 | M29F800FT55M3F2 |
|---|---|---|
| Marke | Micron Technology | Micron Technology |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,78 | $2,10 |
| Speichertyp | NOR Flash, Parallel | Parallel NOR Flash |
| Speichergröße | 8 Mbit | — |
| Speicherorganisation | 1M x 8 bit / 512K x 16 bit | 512K x 16 / 1M x 8 |
| Versorgungsspannung | 5 V (single supply) | — |
| Access Time | 55 ns | 55 ns |
| Schnittstelle | Parallel | Parallel, x8/x16 selectable |
| Boot Block Architecture | Top boot block (T) | — |
| Programming Voltage | 5.0 V VCC (no 12 V VPP required) | — |
| Gehäuse | 48-pin TSOP | 44-pin SO (SOP) |
| Montageart | Surface Mount | Surface Mount |
| Packaging | Tape & Reel (T/R) | Tape & Reel (TR) |
| Betriebstemperatur | [DATA_NEEDED: operating temperature range] | -40C to +125C |
| Erase Block Size | [DATA_NEEDED: block size] | — |
| Data Retention | [DATA_NEEDED: data retention] | — |
| Program/Erase Cycles | [DATA_NEEDED: endurance cycles] | — |
| RoHS-Status | [DATA_NEEDED: RoHS status] | Compliant (lead-free suffix F2) |
| Active Read Current | [DATA_NEEDED: ICC read] | — |
| Density | — | 8 Mbit (8389 kbits) |
| Supply Voltage (VCC) | — | 5 V |
| Boot Block Position | — | Top boot block |
| Programming Interface | — | Embedded program/erase controller |
| Standby Current | — | [DATA_NEEDED: standby current] |
| Program/Erase Endurance | — | [DATA_NEEDED: endurance cycles] |