M29W064FT70N3E vs M29W064FB70N3F Comparison
Detailed side-by-side comparison of M29W064FT70N3E by Micron Technology and M29W064FB70N3F by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Micron Technology
M29W064FB70N3F - 64Mb NOR Flash 70ns AEC-Q100 | Micron Technology
M29W064FB70N3F ObsoleteSpecification Comparison
| Parameter | M29W064FT70N3E | M29W064FB70N3F |
|---|---|---|
| Brand | Micron Technology | Micron Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Obsolete |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.00 | $1.20 |
| Memory Type | NOR Flash (Parallel) | NOR Flash, Parallel |
| Density | 64 Mbit | 64 Mbit |
| Organization | 8 Mb x8 or 4 Mb x16 | 8M x8 / 4M x16 |
| Interface | Parallel, CFI compliant | Parallel, x8/x16 selectable (BYTE#) |
| Access Time | 70 ns | 70 ns |
| Supply Voltage | 2.7 V to 3.6 V | 2.7 V to 3.6 V |
| Boot Block Architecture | Top boot block (FT) | — |
| Operating Temperature | -40C to +85C | -40C to +125C |
| Package | 48-TSOP | 48-TSOP |
| Mounting Type | Surface Mount | Surface Mount |
| Programming Voltage | Single 3 V supply (no separate VPP required) | — |
| Erase/Program Method | Command-set page programming, block erase | — |
| Product Longevity Program | No | — |
| Program/Erase Cycles | [DATA_NEEDED: program/erase endurance cycles] | — |
| Active Read Current | [DATA_NEEDED: active read supply current] | — |
| Standby Current | [DATA_NEEDED: standby current] | — |
| RoHS Status | [DATA_NEEDED: RoHS compliance status] | Compliant (F suffix) |
| Boot Block Configuration | — | Bottom boot block (FB) |
| Automotive Qualification | — | AEC-Q100 qualified |
| Packaging | — | Tape & Reel (TR suffix) |
| Status Polling | — | RY/BY# hardware pin + data polling |
| Erase/Program Interface | — | Command set (M29W family compatible) |
| Part Status | — | Obsolete |