M29W064FT70N3F vs M29W064FB70N3E Comparison
Detailed side-by-side comparison of M29W064FT70N3F by Micron Technology and M29W064FB70N3E by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Micron Technology
M29W064FB70N3E - 64Mbit 3V NOR Flash 70ns TSOP-48 | Micron
M29W064FB70N3E ✓ ActiveSpecification Comparison
| Parameter | M29W064FT70N3F | M29W064FB70N3E |
|---|---|---|
| Brand | Micron Technology | Micron Technology |
| Category | Memory ICs | Flash |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $6.30 | $0.00 |
| Memory Type | NOR Flash | NOR Flash, Parallel |
| Density | 64 Mbit | — |
| Organization | 8 Mbit x8 / 4 Mbit x16 | — |
| Access Time | 70 ns | 70 ns |
| Supply Voltage (VCC) | up to 3.6 V for program, erase, read | — |
| VPP Fast Program Voltage | 12 V (optional) | — |
| Interface | Parallel | Parallel, CFI compliant |
| Boot Block Configuration | Top boot block (FT) | — |
| Operating Temperature | -40C to +125C | -40C to +125C |
| Package | 48-TSOP I | 48-Pin TSOP |
| Mounting Type | Surface Mount | Surface Mount |
| Programming Method | Command set / data polling / toggle bit | — |
| Block Protection | Yes, with temporary unprotection | — |
| Product Longevity Program | No | — |
| Width | x8/x16 | — |
| RoHS Status | unknown | Compliant |
| Memory Size | — | 64 Mbit (8M x 8 / 4M x 16) |
| Supply Voltage | — | 3.0 V to 3.6 V (3V/3.3V) |
| Boot Block | — | Bottom boot block (FB variant) |
| Organization Switching | — | Byte/Word selectable via BYTE# pin |
| Reset/Power-Down | — | RP# pin |
| Data Protection | — | Block protection, WP# hardware protection |
| Device Signature | — | Electronic signature for device identification |
| Packaging | — | Tray |
| Brand Source | — | Micron Technology / Alliance Memory, Inc. (second source) |
| Erase/Program Mode | — | Word/byte program, block erase, chip erase |