M29W160FB70N3E vs M29W160EB70N3F Comparison
Detailed side-by-side comparison of M29W160FB70N3E by Micron Technology and M29W160EB70N3F by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | M29W160FB70N3E | M29W160EB70N3F |
|---|---|---|
| Brand | Micron Technology | Micron Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $3.58 | $1.01 |
| Memory Type | FLASH - NOR | FLASH - NOR |
| Memory Size | 16 Mbit (2M x8 / 1M x16) | 16 Mbit (2M x8 / 1M x16) |
| Access Time | 70 ns | 70 ns |
| Interface | Parallel | Parallel (Byte/Word-wide) |
| Supply Voltage (VCC) | 3.0 V to 3.6 V | 2.7 V to 3.6 V |
| Programming Voltage | Single supply (no separate VPP required) | — |
| Bus Configuration | x8 / x16 selectable (BYTE# pin) | x8 / x16 selectable (BYTE# pin) |
| Architecture | Boot block | — |
| Package / Case | 48-TFSOP (0.724 in, 18.40 mm width) | 48-TSOP (0.724 in, 18.40 mm width) |
| Mounting Type | Surface Mount | Surface Mount |
| Packaging | Tray | Tape & Reel |
| Operating Temperature | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Program/Erase Endurance | [DATA_NEEDED: program/erase cycles] | — |
| Data Retention | [DATA_NEEDED: data retention] | — |
| Status Output | Data polling / toggle bit | — |
| Block Protection | Yes (boot block protection) | — |
| Programming Time | — | 10 us per byte/word (typical) |
| Boot Block Position | — | Bottom boot block |
| Qualification | — | Automotive, AEC-Q100 |
| Erase Architecture | — | Block erase (boot block + main blocks) |
| Common Flash Interface | — | Yes (CFI compliant) |
| Reset Input | — | RESET# hardware reset pin |
| MSL Level | — | [DATA_NEEDED: moisture sensitivity level] |