MRF18060BLSR3 vs MRF18030BLSR3 Comparison
Detailed side-by-side comparison of MRF18060BLSR3 by NXP Semiconductors and MRF18030BLSR3 by NXP Semiconductors. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
NXP Semiconductors
MRF18060BLSR3 - 60W RF Power MOSFET 1930-1990 MHz | NXP
MRF18060BLSR3 ⚠ Last Time BuyNXP Semiconductors
MRF18030BLSR3 - 30W 1930-1990 MHz RF Power MOSFET LDMOS | NXP
MRF18030BLSR3 ✓ ActiveSpecification Comparison
| Parameter | MRF18060BLSR3 | MRF18030BLSR3 |
|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Last Time Buy | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $27.85 | $52.10 |
| Transistor Type | Lateral N-Channel Enhancement-Mode MOSFET | N-Channel Enhancement-Mode Lateral MOSFET (LDMOS) |
| Manufacturer | NXP Semiconductors (formerly Freescale/Motorola) | Analog Devices / NXP Semiconductors (formerly Freescale) |
| Frequency Range | 1930 MHz to 1990 MHz (specified band), 1800-2000 MHz (operational) | — |
| Output Power (Pout) | 60 W CW | 30 W (CW or pulsed, in-band) |
| Drain-Source Voltage (VDSS) | 26 V | 26 V typical operating |
| Test Voltage (VDD) | 26 V | — |
| Power Gain (Gps) | 13 dB (typical) | — |
| Drain Efficiency | [DATA_NEEDED: drain efficiency percentage] | [DATA_NEEDED: typical drain efficiency %] |
| Maximum Power Dissipation (Absolute) | 180 W | — |
| Maximum Drain Current | [DATA_NEEDED: maximum DC drain current] | — |
| Operating Temperature Range | [DATA_NEEDED: operating temperature range] | — |
| Storage Temperature Range | [DATA_NEEDED: storage temperature range] | — |
| Package / Case | NI-780S (CASE 465-06, Style 1), ceramic surface-mount | — |
| Mounting Type | Surface Mount | Surface Mount |
| Configuration | Single N-channel | Single, common-source RF power transistor |
| Peak Reflow Temperature | 260 C | — |
| MSL Level | [DATA_NEEDED: MSL rating] | — |
| RoHS Status | [DATA_NEEDED: RoHS compliance] | — |
| Part Number | — | MRF18030BLSR3 |
| Technology | — | LDMOS, laterally diffused metal-oxide-semiconductor |
| Operating Frequency Range | — | 1.8 GHz to 2 GHz (specified 1930-1990 MHz) |
| Target Application Band | — | GSM / GSM-EDGE / DCS-1900 / PCS-1900 |
| Power Gain | — | 14 dB typical at 2 GHz |
| Maximum Power Dissipation (Abs) | — | 83.3 W |
| Operating Mode | — | Enhancement Mode |
| Drain Current (Id) at test condition | — | 250 mA (quiescent / small-signal reference) |
| Package | — | NI-400S (CASE 465E-04, Style 1), ceramic surface mount |
| Lead-Free / RoHS | — | Per NXP product page (verify with current data) |
| Storage Temperature | — | [DATA_NEEDED: storage temperature range] |
| Operating Junction Temperature | — | [DATA_NEEDED: max junction temperature C] |