MRF18060BLSR3 vs MRF18030BLSR3 比較
詳細な並列比較: MRF18060BLSR3 メーカー: NXP Semiconductors および MRF18030BLSR3 メーカー: NXP Semiconductors。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
NXP Semiconductors
MRF18030BLSR3 - 30W 1930-1990 MHz RF Power MOSFET LDMOS | NXP
MRF18030BLSR3 ✓ 生産中仕様比較
| パラメータ | MRF18060BLSR3 | MRF18030BLSR3 |
|---|---|---|
| ブランド | NXP Semiconductors | NXP Semiconductors |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | ラストバイ | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $27.85 | $52.10 |
| トランジスタタイプ | Lateral N-Channel Enhancement-Mode MOSFET | N-Channel Enhancement-Mode Lateral MOSFET (LDMOS) |
| Manufacturer | NXP Semiconductors (formerly Freescale/Motorola) | Analog Devices / NXP Semiconductors (formerly Freescale) |
| Frequency Range | 1930 MHz to 1990 MHz (specified band), 1800-2000 MHz (operational) | — |
| Output Power (Pout) | 60 W CW | 30 W (CW or pulsed, in-band) |
| Drain-Source Voltage (VDSS) | 26 V | 26 V typical operating |
| Test Voltage (VDD) | 26 V | — |
| Power Gain (Gps) | 13 dB (typical) | — |
| Drain Efficiency | [DATA_NEEDED: drain efficiency percentage] | [DATA_NEEDED: typical drain efficiency %] |
| Maximum Power Dissipation (Absolute) | 180 W | — |
| Maximum Drain Current | [DATA_NEEDED: maximum DC drain current] | — |
| 動作温度範囲 | [DATA_NEEDED: operating temperature range] | — |
| Storage Temperature Range | [DATA_NEEDED: storage temperature range] | — |
| パッケージ / ケース | NI-780S (CASE 465-06, Style 1), ceramic surface-mount | — |
| 実装タイプ | Surface Mount | Surface Mount |
| Configuration | Single N-channel | Single, common-source RF power transistor |
| Peak Reflow Temperature | 260 C | — |
| MSLレベル | [DATA_NEEDED: MSL rating] | — |
| RoHS ステータス | [DATA_NEEDED: RoHS compliance] | — |
| Part Number | — | MRF18030BLSR3 |
| Technology | — | LDMOS, laterally diffused metal-oxide-semiconductor |
| Operating Frequency Range | — | 1.8 GHz to 2 GHz (specified 1930-1990 MHz) |
| Target Application Band | — | GSM / GSM-EDGE / DCS-1900 / PCS-1900 |
| Power Gain | — | 14 dB typical at 2 GHz |
| Maximum Power Dissipation (Abs) | — | 83.3 W |
| Operating Mode | — | Enhancement Mode |
| Drain Current (Id) at test condition | — | 250 mA (quiescent / small-signal reference) |
| パッケージ | — | NI-400S (CASE 465E-04, Style 1), ceramic surface mount |
| Lead-Free / RoHS | — | Per NXP product page (verify with current data) |
| Storage Temperature | — | [DATA_NEEDED: storage temperature range] |
| 動作接合温度 | — | [DATA_NEEDED: max junction temperature C] |