MRF6S27085HR3 vs MRF6S19100HR3 Comparison
Detailed side-by-side comparison of MRF6S27085HR3 by NXP Semiconductors and MRF6S19100HR3 by NXP Semiconductors. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
NXP Semiconductors
MRF6S27085HR3 - 20W RF Power MOSFET, 2.6-2.7GHz, 28V LDMOS
MRF6S27085HR3 ✓ ActiveNXP Semiconductors
MRF6S19100HR3 - 22W RF Power MOSFET 1930-1990 MHz N-CDMA | NXP
MRF6S19100HR3 ✓ ActiveSpecification Comparison
| Parameter | MRF6S27085HR3 | MRF6S19100HR3 |
|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $23.75 | $95.00 |
| Manufacturer | NXP Semiconductors (formerly Freescale) | NXP Semiconductors (formerly Freescale Semiconductor) |
| Part Number | MRF6S27085HR3 | MRF6S19100HR3 |
| Transistor Type | LDMOS, N-Channel, Enhancement-Mode, Lateral | — |
| Application | RF Power Amplifier | — |
| Operating Frequency | 2600 MHz to 2700 MHz | — |
| Test Frequency | 2.66 GHz | — |
| Output Power (Average, P1dB-rated) | 20 W | — |
| Power Gain (Typ) | 15.5 dB | — |
| Drain-Source Voltage Rating | 68 V | — |
| Operating Drain Voltage | 28 V | — |
| Quiescent Bias Current (Test) | 900 mA | — |
| Package / Case | NI-780H-2L (CASE 465-06, STYLE 1), ceramic flange mount | NI-780H-2L (Case 465-06, Style 1) |
| Pin Count | 3 (Drain, Gate, Source) | — |
| Mounting Type | Flange / Chassis mount with bolt-down thermal pad | Flanged / Screw-mount with ceramic body |
| Packaging | Tape & Reel (suffix HR3) | — |
| Technology | Lateral DMOS (LDMOS) | N-Channel LDMOS |
| RoHS Status | Compliant per Freescale/NXP material declaration | Compliant (per NXP product page) |
| Device Type | — | RF Power Field Effect Transistor (N-Channel Enhancement-Mode Lateral MOSFET) |
| Operating Frequency Range | — | 1930 MHz to 1990 MHz |
| Output Power (P1dB, Avg) | — | 22 W (N-CDMA Average) |
| Power Gain | — | 16.1 dB (typical at 1.99 GHz) |
| Drain Voltage (Vds) | — | 28 V |
| Quiescent Drain Current (Idq) | — | 900 mA (typical) |
| Lead Style | — | Dual blade (HR3 suffix) |
| Operating Mode | — | Class AB (linear) |
| Target Applications | — | N-CDMA base station, TDMA, CDMA, multicarrier amplifier, PCS/cellular radio, WLL |