MRF6S27085HR3 vs MRF6S19100HR3 对比
详细并排对比 MRF6S27085HR3 出自 NXP Semiconductors 和 MRF6S19100HR3 出自 NXP Semiconductors。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
NXP Semiconductors
MRF6S19100HR3 - 22W RF Power MOSFET 1930-1990 MHz N-CDMA | NXP
MRF6S19100HR3 ✓ 量产中规格对比
| 参数 | MRF6S27085HR3 | MRF6S19100HR3 |
|---|---|---|
| 品牌 | NXP Semiconductors | NXP Semiconductors |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $23.75 | $95.00 |
| Manufacturer | NXP Semiconductors (formerly Freescale) | NXP Semiconductors (formerly Freescale Semiconductor) |
| Part Number | MRF6S27085HR3 | MRF6S19100HR3 |
| 晶体管类型 | LDMOS, N-Channel, Enhancement-Mode, Lateral | — |
| Application | RF Power Amplifier | — |
| Operating Frequency | 2600 MHz to 2700 MHz | — |
| Test Frequency | 2.66 GHz | — |
| Output Power (Average, P1dB-rated) | 20 W | — |
| Power Gain (Typ) | 15.5 dB | — |
| Drain-Source Voltage Rating | 68 V | — |
| Operating Drain Voltage | 28 V | — |
| Quiescent Bias Current (Test) | 900 mA | — |
| 封装 / 外壳 | NI-780H-2L (CASE 465-06, STYLE 1), ceramic flange mount | NI-780H-2L (Case 465-06, Style 1) |
| 引脚数量 | 3 (Drain, Gate, Source) | — |
| 安装类型 | Flange / Chassis mount with bolt-down thermal pad | Flanged / Screw-mount with ceramic body |
| Packaging | Tape & Reel (suffix HR3) | — |
| Technology | Lateral DMOS (LDMOS) | N-Channel LDMOS |
| RoHS 状态 | Compliant per Freescale/NXP material declaration | Compliant (per NXP product page) |
| Device Type | — | RF Power Field Effect Transistor (N-Channel Enhancement-Mode Lateral MOSFET) |
| Operating Frequency Range | — | 1930 MHz to 1990 MHz |
| Output Power (P1dB, Avg) | — | 22 W (N-CDMA Average) |
| Power Gain | — | 16.1 dB (typical at 1.99 GHz) |
| Drain Voltage (Vds) | — | 28 V |
| Quiescent Drain Current (Idq) | — | 900 mA (typical) |
| Lead Style | — | Dual blade (HR3 suffix) |
| Operating Mode | — | Class AB (linear) |
| Target Applications | — | N-CDMA base station, TDMA, CDMA, multicarrier amplifier, PCS/cellular radio, WLL |