MRF6S9045NBR1 vs MRF9030MBR1 Comparison
Detailed side-by-side comparison of MRF6S9045NBR1 by NXP Semiconductors and MRF9030MBR1 by NXP Semiconductors. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
NXP Semiconductors
MRF6S9045NBR1 - 880MHz 10W RF Power MOSFET | NXP Semiconductors
MRF6S9045NBR1 ✓ Active
Specification Comparison
| Parameter | MRF6S9045NBR1 | MRF9030MBR1 |
|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $12.10 | $25.80 |
| Manufacturer | NXP Semiconductors (formerly Freescale) | NXP Semiconductors (formerly Freescale / Motorola) |
| Transistor Type | N-Channel Enhancement-Mode Lateral MOSFET | N-Channel Enhancement-Mode Lateral MOSFET |
| Technology | Lateral DMOS, RF power | — |
| Operating Frequency | Up to 1000 MHz (typical 880 MHz) | — |
| Drain-Source Voltage (V DSS min) | 68 V | — |
| Typical Operating Drain Voltage (V DD) | 28 V | — |
| Quiescent Drain Current (I DQ) | 350 mA | — |
| Output Power (P out avg) | 10 W | — |
| Power Gain (G ps) | 22.7 dB at 880 MHz | — |
| Drain Efficiency (η D) | [DATA_NEEDED: drain efficiency %] | — |
| Maximum Power Dissipation (P D max) | 175 W | — |
| Configuration | Single, common-source | Single, common-source |
| Mounting Type | Surface Mount (flange/ceramic) | Surface Mount (flanged ceramic) |
| Package / Case | NI-880H-2L (TO-272-2 variant) | — |
| Operating Temperature | [DATA_NEEDED: junction/storage temperature range] | — |
| MSL Level | [DATA_NEEDED: MSL rating] | — |
| RoHS Status | Compliant | [DATA_NEEDED: RoHS compliance status from manufacturer page] |
| Lead-Free | Yes | — |
| Part Family | — | RF Sub-Micron MOSFET Line |
| Typical Output Power | — | 30 W at 945 MHz |
| Operating Frequency Range | — | DC to 1000 MHz |
| Power Gain (typical) | — | 20 dB |
| Drain-Source Voltage (Vds) Rating | — | 26 V |
| Typical Bias Current | — | 250 mA |
| Package | — | TO-272-2 (ceramic, 2-lead flanged) |
| Maximum Dissipation (per Partstack) | — | 139 W |
| Moisture Sensitivity Level (MSL) | — | 3 |
| Application | — | Broadband RF power amplifier / large-signal common-source amplifier |
| Polarity / Channel Mode | — | N-Channel, enhancement-mode |