MRF6S9045NBR1 vs MRF9030MBR1 Сравнение
Подробное сравнение бок о бок MRF6S9045NBR1 от NXP Semiconductors и MRF9030MBR1 от NXP Semiconductors. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
NXP Semiconductors
MRF6S9045NBR1 - 880MHz 10W RF Power MOSFET | NXP Semiconductors
MRF6S9045NBR1 ✓ АктивенNXP Semiconductors
MRF9030MBR1 - 30W, 945MHz RF Power MOSFET | NXP / Freescale
MRF9030MBR1 ✓ АктивенСравнение характеристик
| Параметр | MRF6S9045NBR1 | MRF9030MBR1 |
|---|---|---|
| Бренд | NXP Semiconductors | NXP Semiconductors |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $12,10 | $25,80 |
| Manufacturer | NXP Semiconductors (formerly Freescale) | NXP Semiconductors (formerly Freescale / Motorola) |
| Тип транзистора | N-Channel Enhancement-Mode Lateral MOSFET | N-Channel Enhancement-Mode Lateral MOSFET |
| Technology | Lateral DMOS, RF power | — |
| Operating Frequency | Up to 1000 MHz (typical 880 MHz) | — |
| Drain-Source Voltage (V DSS min) | 68 V | — |
| Typical Operating Drain Voltage (V DD) | 28 V | — |
| Quiescent Drain Current (I DQ) | 350 mA | — |
| Output Power (P out avg) | 10 W | — |
| Power Gain (G ps) | 22.7 dB at 880 MHz | — |
| Drain Efficiency (η D) | [DATA_NEEDED: drain efficiency %] | — |
| Maximum Power Dissipation (P D max) | 175 W | — |
| Configuration | Single, common-source | Single, common-source |
| Тип монтажа | Surface Mount (flange/ceramic) | Surface Mount (flanged ceramic) |
| Корпус / Типоразмер | NI-880H-2L (TO-272-2 variant) | — |
| Рабочая температура | [DATA_NEEDED: junction/storage temperature range] | — |
| Уровень MSL | [DATA_NEEDED: MSL rating] | — |
| Статус RoHS | Compliant | [DATA_NEEDED: RoHS compliance status from manufacturer page] |
| Lead-Free | Yes | — |
| Part Family | — | RF Sub-Micron MOSFET Line |
| Typical Output Power | — | 30 W at 945 MHz |
| Operating Frequency Range | — | DC to 1000 MHz |
| Power Gain (typical) | — | 20 dB |
| Drain-Source Voltage (Vds) Rating | — | 26 V |
| Typical Bias Current | — | 250 mA |
| Корпус | — | TO-272-2 (ceramic, 2-lead flanged) |
| Maximum Dissipation (per Partstack) | — | 139 W |
| Уровень чувствительности к влаге (MSL) | — | 3 |
| Application | — | Broadband RF power amplifier / large-signal common-source amplifier |
| Polarity / Channel Mode | — | N-Channel, enhancement-mode |