MRF6S9160HR3 vs MRFE6S9160HR3 Comparison
Detailed side-by-side comparison of MRF6S9160HR3 by NXP Semiconductors and MRFE6S9160HR3 by NXP Semiconductors. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | MRF6S9160HR3 | MRFE6S9160HR3 |
|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $510.00 | $25.20 |
| Technology | RF Power MOSFET (lateral N-channel, enhancement mode) | HV6E lateral MOSFET (LDMOS-like) |
| Frequency Band | 880 MHz (single-band cellular UHF) | — |
| Operating Frequency Range | [DATA_NEEDED: full datasheet frequency range] | 865 MHz to 960 MHz |
| Drain-Source Voltage (VDSS) | [DATA_NEEDED: VDSS rating] | — |
| Supply Voltage (VDD) | 28 V (typical operation) | — |
| Average Output Power (Pout avg) | 35 W (N-CDMA, 880 MHz) | — |
| Peak Output Power (Pout peak) | [DATA_NEEDED: peak Pout rating] | — |
| Power Gain (Gp) | 20.9 dB (typical at 880 MHz) | — |
| Drain Efficiency (ηD) | [DATA_NEEDED: efficiency at rated Pout] | — |
| Quiescent Bias Current (IDQ) | 1.2 A (typical) | — |
| Package / Case | NI-780H-2L (CASE 465-06, STYLE 1), ceramic, flanged | NI-780H-2L (ceramic/metal air-cavity flange-mount) |
| Mounting Type | Chassis/Surface flange mount (screw-down) | Chassis / Flange mount (through-hole RF leads) |
| Configuration | Single (single-ended, common-source) | — |
| Operating Mode | Enhancement mode, Class AB | — |
| Test Signal | Single N-CDMA | — |
| Maximum Power Dissipation | 565 W (absolute, per Partstack parametric record) | — |
| Lead Finish | [DATA_NEEDED: lead finish] | — |
| RoHS Status | unknown | Compliant |
| Manufacturer | Freescale Semiconductor (now NXP Semiconductors) | NXP Semiconductors |
| Transistor Type | — | N-Channel Enhancement-Mode Lateral MOSFET |
| Drain-Source Voltage (V DSS) | — | 70 V (max) |
| Drain Current (continuous) | — | [DATA_NEEDED: typical drain current at TC=25C] |
| Test Frequency | — | 880 MHz |
| Drain Supply Voltage (V DD) | — | 28 V (typical) |
| Output Power (Average) | — | 35 W (single-carrier N-CDMA, 880 MHz) |
| Output Power (PEP) | — | [DATA_NEEDED: PEP at specified conditions] |
| Power Gain (G ps / G p) | — | 21 dB (typical at 880 MHz) |
| Drain Efficiency | — | 32.4% (typical, N-CDMA, 880 MHz) |
| Operating Temperature Range | — | -40C to +150C (junction) |
| Storage Temperature | — | [DATA_NEEDED: storage temperature] |
| Thermal Resistance (R thJC) | — | [DATA_NEEDED: thermal resistance junction-to-case] |
| Input Match | — | Internally matched input (broadband) |
| Lead-Free | — | Yes |
| MSL Level | — | Not applicable (non-SMD air-cavity package) |