MRF6S9160HR3 vs MRFE6S9160HR3 Comparación
Comparación detallada lado a lado de MRF6S9160HR3 por NXP Semiconductors y MRFE6S9160HR3 por NXP Semiconductors. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | MRF6S9160HR3 | MRFE6S9160HR3 |
|---|---|---|
| Marca | NXP Semiconductors | NXP Semiconductors |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $510,00 | $25,20 |
| Technology | RF Power MOSFET (lateral N-channel, enhancement mode) | HV6E lateral MOSFET (LDMOS-like) |
| Frequency Band | 880 MHz (single-band cellular UHF) | — |
| Operating Frequency Range | [DATA_NEEDED: full datasheet frequency range] | 865 MHz to 960 MHz |
| Drain-Source Voltage (VDSS) | [DATA_NEEDED: VDSS rating] | — |
| Supply Voltage (VDD) | 28 V (typical operation) | — |
| Average Output Power (Pout avg) | 35 W (N-CDMA, 880 MHz) | — |
| Peak Output Power (Pout peak) | [DATA_NEEDED: peak Pout rating] | — |
| Power Gain (Gp) | 20.9 dB (typical at 880 MHz) | — |
| Drain Efficiency (ηD) | [DATA_NEEDED: efficiency at rated Pout] | — |
| Quiescent Bias Current (IDQ) | 1.2 A (typical) | — |
| Encapsulado / Carcasa | NI-780H-2L (CASE 465-06, STYLE 1), ceramic, flanged | NI-780H-2L (ceramic/metal air-cavity flange-mount) |
| Tipo de montaje | Chassis/Surface flange mount (screw-down) | Chassis / Flange mount (through-hole RF leads) |
| Configuration | Single (single-ended, common-source) | — |
| Operating Mode | Enhancement mode, Class AB | — |
| Test Signal | Single N-CDMA | — |
| Maximum Power Dissipation | 565 W (absolute, per Partstack parametric record) | — |
| Lead Finish | [DATA_NEEDED: lead finish] | — |
| Estado RoHS | unknown | Compliant |
| Manufacturer | Freescale Semiconductor (now NXP Semiconductors) | NXP Semiconductors |
| Tipo de transistor | — | N-Channel Enhancement-Mode Lateral MOSFET |
| Drain-Source Voltage (V DSS) | — | 70 V (max) |
| Drain Current (continuous) | — | [DATA_NEEDED: typical drain current at TC=25C] |
| Test Frequency | — | 880 MHz |
| Drain Supply Voltage (V DD) | — | 28 V (typical) |
| Output Power (Average) | — | 35 W (single-carrier N-CDMA, 880 MHz) |
| Output Power (PEP) | — | [DATA_NEEDED: PEP at specified conditions] |
| Power Gain (G ps / G p) | — | 21 dB (typical at 880 MHz) |
| Drain Efficiency | — | 32.4% (typical, N-CDMA, 880 MHz) |
| Rango de temperatura de funcionamiento | — | -40C to +150C (junction) |
| Storage Temperature | — | [DATA_NEEDED: storage temperature] |
| Thermal Resistance (R thJC) | — | [DATA_NEEDED: thermal resistance junction-to-case] |
| Input Match | — | Internally matched input (broadband) |
| Lead-Free | — | Yes |
| Nivel MSL | — | Not applicable (non-SMD air-cavity package) |