MRF7S19100NBR1 vs MRF7S19100NR1 Comparison
Detailed side-by-side comparison of MRF7S19100NBR1 by NXP Semiconductors and MRF7S19100NR1 by NXP Semiconductors. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
NXP Semiconductors
MRF7S19100NR1 - 29W 1930-1990MHz RF Power LDMOS | NXP Semiconductors
MRF7S19100NR1 ✓ ActiveSpecification Comparison
| Parameter | MRF7S19100NBR1 | MRF7S19100NR1 |
|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $30.10 | $24.60 |
| Manufacturer | NXP Semiconductors (formerly Freescale Semiconductor) | — |
| Part Number | MRF7S19100NBR1 | — |
| Device Type | RF Power MOSFET (N-Channel Enhancement-Mode Lateral) | — |
| Frequency Band | 1.93 GHz to 1.99 GHz | — |
| Test Frequency (typical) | 1.96 GHz | — |
| Drain-Source Breakdown Voltage (V(BR)DSS, min) | 65 V | — |
| Drain Operating Voltage (VDD) | 28 V (nominal) | — |
| Quiescent Drain Current (IDQ) | 1000 mA | — |
| Output Power (Pout, average) | 29 W (single-carrier W-CDMA, 3GPP TM1 64 DPCH, 50% clipping) | — |
| Power Gain (Gp, typical) | 17.5 dB | — |
| Drain Efficiency (typical) | [DATA_NEEDED: typical drain efficiency %] | — |
| Package / Case | TO-270 WB-4 (TO-272 WB-4), plastic over-molded, surface mount | — |
| Configuration | Single, N-Channel | Single, Common Source |
| Mounting Style | Surface Mount with copper ground flange (heatsink bolted) | — |
| JEDEC Terminal Code | JESD-30: R-PDFM-F4 | — |
| Terminal Finish (JESD-609) | e3 (tin-lead reflow compatible per manufacturer data) | — |
| Operating Temperature Range | [DATA_NEEDED: operating temperature range C] | — |
| Storage Temperature Range | [DATA_NEEDED: storage temperature range C] | — |
| RoHS Status | compliant (per NXP product page) | [DATA_NEEDED: RoHS compliance per NXP product page] |
| Lead-Free | yes | — |
| Transistor Type | — | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET |
| Frequency Range | — | 1930 MHz to 1990 MHz |
| Drain-Source Voltage (V(BR)DSS) min | — | 65 V |
| Drain Supply Voltage (VDD) typical | — | 28 V |
| Output Power (Pout) Avg W-CDMA | — | 29 W |
| Power Gain | — | 17.5 dB |
| Drain Current at Test (ID) | — | 1 A |
| Quiescent Current (IDQ) typical | — | 1000 mA to 1400 mA |
| Test Voltage | — | 28 V |
| Package | — | TO-270 WB-4 (Case 1486-03) Plastic |
| Mounting Type | — | Surface Mount |
| Operating Mode | — | Class AB / Class C |
| Modulation Target | — | Single-Carrier W-CDMA (3GPP TM1 64 DPCH) |
| MSL Level | — | [DATA_NEEDED: MSL level per JEDEC J-STD-020] |