MRF7S19100NBR1 vs MRF7S19100NR1 比較
詳細な並列比較: MRF7S19100NBR1 メーカー: NXP Semiconductors および MRF7S19100NR1 メーカー: NXP Semiconductors。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
NXP Semiconductors
MRF7S19100NR1 - 29W 1930-1990MHz RF Power LDMOS | NXP Semiconductors
MRF7S19100NR1 ✓ 生産中仕様比較
| パラメータ | MRF7S19100NBR1 | MRF7S19100NR1 |
|---|---|---|
| ブランド | NXP Semiconductors | NXP Semiconductors |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $30.10 | $24.60 |
| Manufacturer | NXP Semiconductors (formerly Freescale Semiconductor) | — |
| Part Number | MRF7S19100NBR1 | — |
| Device Type | RF Power MOSFET (N-Channel Enhancement-Mode Lateral) | — |
| Frequency Band | 1.93 GHz to 1.99 GHz | — |
| Test Frequency (typical) | 1.96 GHz | — |
| Drain-Source Breakdown Voltage (V(BR)DSS, min) | 65 V | — |
| Drain Operating Voltage (VDD) | 28 V (nominal) | — |
| Quiescent Drain Current (IDQ) | 1000 mA | — |
| Output Power (Pout, average) | 29 W (single-carrier W-CDMA, 3GPP TM1 64 DPCH, 50% clipping) | — |
| Power Gain (Gp, typical) | 17.5 dB | — |
| Drain Efficiency (typical) | [DATA_NEEDED: typical drain efficiency %] | — |
| パッケージ / ケース | TO-270 WB-4 (TO-272 WB-4), plastic over-molded, surface mount | — |
| Configuration | Single, N-Channel | Single, Common Source |
| 実装スタイル | Surface Mount with copper ground flange (heatsink bolted) | — |
| JEDEC Terminal Code | JESD-30: R-PDFM-F4 | — |
| Terminal Finish (JESD-609) | e3 (tin-lead reflow compatible per manufacturer data) | — |
| 動作温度範囲 | [DATA_NEEDED: operating temperature range C] | — |
| Storage Temperature Range | [DATA_NEEDED: storage temperature range C] | — |
| RoHS ステータス | compliant (per NXP product page) | [DATA_NEEDED: RoHS compliance per NXP product page] |
| Lead-Free | yes | — |
| トランジスタタイプ | — | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET |
| Frequency Range | — | 1930 MHz to 1990 MHz |
| Drain-Source Voltage (V(BR)DSS) min | — | 65 V |
| Drain Supply Voltage (VDD) typical | — | 28 V |
| Output Power (Pout) Avg W-CDMA | — | 29 W |
| Power Gain | — | 17.5 dB |
| Drain Current at Test (ID) | — | 1 A |
| Quiescent Current (IDQ) typical | — | 1000 mA to 1400 mA |
| Test Voltage | — | 28 V |
| パッケージ | — | TO-270 WB-4 (Case 1486-03) Plastic |
| 実装タイプ | — | Surface Mount |
| Operating Mode | — | Class AB / Class C |
| Modulation Target | — | Single-Carrier W-CDMA (3GPP TM1 64 DPCH) |
| MSLレベル | — | [DATA_NEEDED: MSL level per JEDEC J-STD-020] |