MRF7S19100NR1 vs MRF7S19100NBR1 Comparison

Detailed side-by-side comparison of MRF7S19100NR1 by NXP Semiconductors and MRF7S19100NBR1 by NXP Semiconductors. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

NXP Semiconductors
MRF7S19100NR1 MRF7S19100NR1 - 29W 1930-1990MHz RF Power LDMOS | NXP Semiconductors

MRF7S19100NR1 - 29W 1930-1990MHz RF Power LDMOS | NXP Semiconductors

MRF7S19100NR1 ✓ Active
NXP Semiconductors
MRF7S19100NBR1 MRF7S19100NBR1 - 29W 1.93-1.99GHz RF Power MOSFET | NXP

MRF7S19100NBR1 - 29W 1.93-1.99GHz RF Power MOSFET | NXP

MRF7S19100NBR1 ✓ Active

Specification Comparison

Parameter MRF7S19100NR1 MRF7S19100NBR1
Brand NXP Semiconductors NXP Semiconductors
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $24.60 $30.10
Transistor Type LDMOS, N-Channel Enhancement-Mode Lateral MOSFET —
Frequency Range 1930 MHz to 1990 MHz —
Drain-Source Voltage (V(BR)DSS) min 65 V —
Drain Supply Voltage (VDD) typical 28 V —
Output Power (Pout) Avg W-CDMA 29 W —
Power Gain 17.5 dB —
Drain Current at Test (ID) 1 A —
Quiescent Current (IDQ) typical 1000 mA to 1400 mA —
Test Voltage 28 V —
Package TO-270 WB-4 (Case 1486-03) Plastic —
Mounting Type Surface Mount —
Configuration Single, Common Source Single, N-Channel
Operating Mode Class AB / Class C —
Modulation Target Single-Carrier W-CDMA (3GPP TM1 64 DPCH) —
MSL Level [DATA_NEEDED: MSL level per JEDEC J-STD-020] —
RoHS Status [DATA_NEEDED: RoHS compliance per NXP product page] compliant (per NXP product page)
Manufacturer — NXP Semiconductors (formerly Freescale Semiconductor)
Part Number — MRF7S19100NBR1
Device Type — RF Power MOSFET (N-Channel Enhancement-Mode Lateral)
Frequency Band — 1.93 GHz to 1.99 GHz
Test Frequency (typical) — 1.96 GHz
Drain-Source Breakdown Voltage (V(BR)DSS, min) — 65 V
Drain Operating Voltage (VDD) — 28 V (nominal)
Quiescent Drain Current (IDQ) — 1000 mA
Output Power (Pout, average) — 29 W (single-carrier W-CDMA, 3GPP TM1 64 DPCH, 50% clipping)
Power Gain (Gp, typical) — 17.5 dB
Drain Efficiency (typical) — [DATA_NEEDED: typical drain efficiency %]
Package / Case — TO-270 WB-4 (TO-272 WB-4), plastic over-molded, surface mount
Mounting Style — Surface Mount with copper ground flange (heatsink bolted)
JEDEC Terminal Code — JESD-30: R-PDFM-F4
Terminal Finish (JESD-609) — e3 (tin-lead reflow compatible per manufacturer data)
Operating Temperature Range — [DATA_NEEDED: operating temperature range C]
Storage Temperature Range — [DATA_NEEDED: storage temperature range C]
Lead-Free — yes

Datasheets & Resources

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