MRF7S19100NR1 vs MRF7S19100NBR1 Comparación
Comparación detallada lado a lado de MRF7S19100NR1 por NXP Semiconductors y MRF7S19100NBR1 por NXP Semiconductors. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
NXP Semiconductors
MRF7S19100NR1 - 29W 1930-1990MHz RF Power LDMOS | NXP Semiconductors
MRF7S19100NR1 ✓ ActivoComparación de especificaciones
| Parámetro | MRF7S19100NR1 | MRF7S19100NBR1 |
|---|---|---|
| Marca | NXP Semiconductors | NXP Semiconductors |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $24,60 | $30,10 |
| Tipo de transistor | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET | — |
| Frequency Range | 1930 MHz to 1990 MHz | — |
| Drain-Source Voltage (V(BR)DSS) min | 65 V | — |
| Drain Supply Voltage (VDD) typical | 28 V | — |
| Output Power (Pout) Avg W-CDMA | 29 W | — |
| Power Gain | 17.5 dB | — |
| Drain Current at Test (ID) | 1 A | — |
| Quiescent Current (IDQ) typical | 1000 mA to 1400 mA | — |
| Test Voltage | 28 V | — |
| Encapsulado | TO-270 WB-4 (Case 1486-03) Plastic | — |
| Tipo de montaje | Surface Mount | — |
| Configuration | Single, Common Source | Single, N-Channel |
| Operating Mode | Class AB / Class C | — |
| Modulation Target | Single-Carrier W-CDMA (3GPP TM1 64 DPCH) | — |
| Nivel MSL | [DATA_NEEDED: MSL level per JEDEC J-STD-020] | — |
| Estado RoHS | [DATA_NEEDED: RoHS compliance per NXP product page] | compliant (per NXP product page) |
| Manufacturer | — | NXP Semiconductors (formerly Freescale Semiconductor) |
| Part Number | — | MRF7S19100NBR1 |
| Device Type | — | RF Power MOSFET (N-Channel Enhancement-Mode Lateral) |
| Frequency Band | — | 1.93 GHz to 1.99 GHz |
| Test Frequency (typical) | — | 1.96 GHz |
| Drain-Source Breakdown Voltage (V(BR)DSS, min) | — | 65 V |
| Drain Operating Voltage (VDD) | — | 28 V (nominal) |
| Quiescent Drain Current (IDQ) | — | 1000 mA |
| Output Power (Pout, average) | — | 29 W (single-carrier W-CDMA, 3GPP TM1 64 DPCH, 50% clipping) |
| Power Gain (Gp, typical) | — | 17.5 dB |
| Drain Efficiency (typical) | — | [DATA_NEEDED: typical drain efficiency %] |
| Encapsulado / Carcasa | — | TO-270 WB-4 (TO-272 WB-4), plastic over-molded, surface mount |
| Estilo de montaje | — | Surface Mount with copper ground flange (heatsink bolted) |
| JEDEC Terminal Code | — | JESD-30: R-PDFM-F4 |
| Terminal Finish (JESD-609) | — | e3 (tin-lead reflow compatible per manufacturer data) |
| Rango de temperatura de funcionamiento | — | [DATA_NEEDED: operating temperature range C] |
| Storage Temperature Range | — | [DATA_NEEDED: storage temperature range C] |
| Lead-Free | — | yes |