MRF8P23080HSR5 vs MRF8P23080HSR3 Comparison
Detailed side-by-side comparison of MRF8P23080HSR5 by NXP Semiconductors and MRF8P23080HSR3 by NXP Semiconductors. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
NXP Semiconductors
MRF8P23080HSR3 - 80W 2300-2400MHz LDMOS RF Power MOSFET | NXP
MRF8P23080HSR3 ✓ ActiveSpecification Comparison
| Parameter | MRF8P23080HSR5 | MRF8P23080HSR3 |
|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $55.80 | $65.10 |
| Manufacturer | NXP Semiconductors | NXP Semiconductors (formerly Freescale Semiconductor) |
| Product Type | RF Power MOSFET (Lateral N-Channel) | — |
| Series | Airfast HV8 | — |
| Frequency Band | 2300 to 2400 MHz | — |
| Test Frequency | 2.3 GHz | — |
| Target Waveforms | W-CDMA, LTE | — |
| Average Output Power | 16 W | — |
| Peak Output Power | 80 W | — |
| Power Gain (typical) | 14.6 dB at 2.3 GHz | — |
| Drain-Source Voltage (Vds) Test Condition | 28 V | — |
| Drain Current (Id) Test Condition | 280 mA | — |
| Package / Case | NI-780S-4L | NI-780S-4L (air-cavity ceramic, flange-mount) |
| Mounting Type | Chassis / Flange Mount | Chassis / flange-mount, bolt-down with screws |
| Operating Mode | Class AB | — |
| Technology | Laterally Diffused MOS (LDMOS) | — |
| Channel Polarity | N-Channel | — |
| Compliance | RoHS compliant per NXP product page | — |
| Transistor Type | — | LDMOS (Dual), N-Channel Enhancement-Mode Lateral MOSFET |
| Drain-Source Voltage (V DSS) | — | 65 V |
| Drain Bias Voltage (V DD) | — | 28 V (typical operating) |
| Test Quiescent Current (I DQ) | — | 280 mA |
| Frequency Range | — | 2300 MHz to 2620 MHz |
| Center Test Frequency | — | 2.3 GHz |
| Typical Power Gain | — | 14.6 dB |
| Average Output Power (P3dB-class, single-carrier W-CDMA) | — | 16 W |
| Maximum Operating Temperature (Tj) | — | 225 C (junction) |
| Configuration | — | Common source, 2 elements |
| Lead-Free / RoHS | — | Lead-Free Status confirmed per DigiKey listing |
| Typical Modulation Formats | — | W-CDMA, LTE, TD-LTE; Class AB and Class C |
| Suggested Topology | — | Doherty final stage (single-carrier W-CDMA) |