MRF8P23080HSR5 vs MRF8P23080HSR3 비교
다음의 상세 나란히 비교: MRF8P23080HSR5 제조: NXP Semiconductors 및 MRF8P23080HSR3 제조: NXP Semiconductors. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
NXP Semiconductors
MRF8P23080HSR3 - 80W 2300-2400MHz LDMOS RF Power MOSFET | NXP
MRF8P23080HSR3 ✓ 활성사양 비교
| 파라미터 | MRF8P23080HSR5 | MRF8P23080HSR3 |
|---|---|---|
| 브랜드 | NXP Semiconductors | NXP Semiconductors |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $55.80 | $65.10 |
| Manufacturer | NXP Semiconductors | NXP Semiconductors (formerly Freescale Semiconductor) |
| Product Type | RF Power MOSFET (Lateral N-Channel) | — |
| Series | Airfast HV8 | — |
| Frequency Band | 2300 to 2400 MHz | — |
| Test Frequency | 2.3 GHz | — |
| Target Waveforms | W-CDMA, LTE | — |
| Average Output Power | 16 W | — |
| Peak Output Power | 80 W | — |
| Power Gain (typical) | 14.6 dB at 2.3 GHz | — |
| Drain-Source Voltage (Vds) Test Condition | 28 V | — |
| Drain Current (Id) Test Condition | 280 mA | — |
| 패키지 / 케이스 | NI-780S-4L | NI-780S-4L (air-cavity ceramic, flange-mount) |
| 실장 유형 | Chassis / Flange Mount | Chassis / flange-mount, bolt-down with screws |
| Operating Mode | Class AB | — |
| Technology | Laterally Diffused MOS (LDMOS) | — |
| Channel Polarity | N-Channel | — |
| Compliance | RoHS compliant per NXP product page | — |
| 트랜지스터 유형 | — | LDMOS (Dual), N-Channel Enhancement-Mode Lateral MOSFET |
| Drain-Source Voltage (V DSS) | — | 65 V |
| Drain Bias Voltage (V DD) | — | 28 V (typical operating) |
| Test Quiescent Current (I DQ) | — | 280 mA |
| Frequency Range | — | 2300 MHz to 2620 MHz |
| Center Test Frequency | — | 2.3 GHz |
| Typical Power Gain | — | 14.6 dB |
| Average Output Power (P3dB-class, single-carrier W-CDMA) | — | 16 W |
| Maximum Operating Temperature (Tj) | — | 225 C (junction) |
| Configuration | — | Common source, 2 elements |
| Lead-Free / RoHS | — | Lead-Free Status confirmed per DigiKey listing |
| Typical Modulation Formats | — | W-CDMA, LTE, TD-LTE; Class AB and Class C |
| Suggested Topology | — | Doherty final stage (single-carrier W-CDMA) |