MRFE6S9135HSR3 vs MRFE6S9135HR3 Comparison
Detailed side-by-side comparison of MRFE6S9135HSR3 by NXP Semiconductors and MRFE6S9135HR3 by NXP Semiconductors. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
NXP Semiconductors
MRFE6S9135HR3 - 135W 900MHz RF Power LDMOS | NXP | NI-880H-2L
MRFE6S9135HR3 ✓ ActiveSpecification Comparison
| Parameter | MRFE6S9135HSR3 | MRFE6S9135HR3 |
|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $108.00 | $0.00 |
| Manufacturer | NXP Semiconductors (formerly Freescale) | — |
| Part Status | Active | — |
| Transistor Type | LDMOS (N-Channel Enhancement-Mode Lateral MOSFET) | N-Channel Enhancement-Mode Lateral MOSFET (LDMOS) |
| Frequency | 940 MHz (designed up to 1000 MHz) | — |
| Test Voltage | 28 V | — |
| Test Current | 1 A | 1 A |
| Power Gain (Gps) | 21 dB | 21 dB (typical at 940 MHz) |
| Output Power (Pout) | 39 W average (single W-CDMA, 940 MHz) | 39 W (at 940 MHz, two-tone test) |
| Drain-Source Voltage Rating | 66 V | — |
| Drain Current Rating | 10 µA (leakage spec from cross-reference) | — |
| Package / Case | NI-880S (CASE 465B-03, STYLE 1), ceramic, straight leads | — |
| Mounting Type | Through-hole / chassis-mount with flange bolt-down | Screw-mount / bolt-down flange |
| Input / Output Impedance | [DATA_NEEDED: input/output impedance at 940 MHz test condition] | — |
| Drain Efficiency | [DATA_NEEDED: drain efficiency at 39 W W-CDMA] | 63.3 % (typical at test conditions) |
| Operating Junction Temperature | -40 C to +150 C (typical LDMOS rating; [DATA_NEEDED: exact datasheet Tj max]) | — |
| Lead Free Status | Lead Free | — |
| RoHS Status | Compliant per NXP product page | [DATA_NEEDED: RoHS status] |
| Moisture Sensitivity Level (MSL) | [DATA_NEEDED: MSL rating from datasheet] | — |
| Packaging | Tape & Reel (suffix R3, 250-unit per reel) | — |
| Technology | — | RF Power LDMOS |
| Drain-Source Voltage (Rated) | — | 66 V |
| Typical Operating Voltage | — | 28 V |
| Operating Frequency Range | — | Up to 1000 MHz (broadband, 1 MHz to 1000 MHz typical) |
| Test Frequency | — | 940 MHz |
| Package Type | — | NI-880H-2L (ceramic flange) |
| ESD Protection (HBM) | — | Class II (per JESD22-A114) |
| ESD Protection (MM) | — | Class A (per EIA/JESD22-A115) |
| ESD Protection (CDM) | — | Class IV (per JESD22-C101) |
| Lead Status | — | Lead-containing (per digchip listing) |
| Designed For | — | Broadband commercial and industrial applications up to 1000 MHz |