MT40A1G8SA-075:E vs H5AN8G6NDJR-XNC Comparison
Detailed side-by-side comparison of MT40A1G8SA-075:E by Micron Technology and H5AN8G6NDJR-XNC by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | MT40A1G8SA-075:E | H5AN8G6NDJR-XNC |
|---|---|---|
| Brand | Micron Technology | SK hynix |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $6.30 | $55.68 |
| Memory Type | SDRAM - DDR4 | DDR4 SDRAM |
| Memory Size | 8Gbit (1G x 8) | 8 Gb |
| Interface | Parallel | — |
| Clock Frequency | 1.33 GHz | — |
| Data Rate | 2666 MT/s | 3200 Mbps |
| Supply Voltage (VDD/VDDQ) | 1.2V ±60mV | — |
| VPP Supply Voltage | 2.5V (-125mV, +250mV) | — |
| Operating Temperature Range | 0°C to +95°C | — |
| Refresh Time | 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C to 105°C | — |
| Package | 78-FBGA (7.5x11 mm) | FBGA-96 (13x7.5 mm) |
| Mounting Type | Surface Mount | — |
| Write Leveling | Supported | Yes |
| Dynamic On-Chip Termination | Supported | Yes |
| CRC Function | Supported | Yes |
| Data Mask Function | Supported | — |
| RoHS Status | Compliant | — |
| Memory Organization | — | 512M x16 |
| Supply Voltage (VDD) | — | 1.2 V (max 1.26 V) |
| Number of Terminals | — | 96 |
| Maximum Operating Temperature | — | 85 °C |
| Input/Output Type | — | COMMON |
| RoHS | — | Compliant |
| Lead-Free | — | Yes |
| Halogen Free | — | Yes |
| Auto Self-Refresh | — | Yes |
| Auto Precharge | — | Yes |
| Data Mask | — | Yes |
| ZQ Calibration | — | Yes |
| Asynchronous Reset | — | Yes |