MT40A512M16HA-083E vs MT40A512M16LY-062E Comparison

Detailed side-by-side comparison of MT40A512M16HA-083E by Micron Technology and MT40A512M16LY-062E by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Micron Technology
MT40A512M16HA-083E MT40A512M16HA-083E - 8Gb DDR4-2400 SDRAM | Micron

MT40A512M16HA-083E - 8Gb DDR4-2400 SDRAM | Micron

MT40A512M16HA-083E ✓ Active
Micron Technology
MT40A512M16LY-062E MT40A512M16LY-062E - 8Gb DDR4 SDRAM 3200MT/s | Micron

MT40A512M16LY-062E - 8Gb DDR4 SDRAM 3200MT/s | Micron

MT40A512M16LY-062E ✓ Active

Specification Comparison

Parameter MT40A512M16HA-083E MT40A512M16LY-062E
Brand Micron Technology Micron Technology
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.00 $6.65
Memory Type DDR4 SDRAM DDR4 SDRAM
Memory Density 8Gbit —
Memory Organization 512M x 16 —
Data Interface Parallel DDR4, 16-bit —
Data Rate 1.2 GHz data clock; DDR4-2400 class 3200 MT/s
VDD Supply 1.2 V plus or minus 60 mV —
VDDQ Supply 1.2 V plus or minus 60 mV —
VPP Supply 2.5 V, -125 mV to +250 mV —
I/O Interface 1.2V pseudo open-drain 1.2 V pseudo open-drain
Reference Voltage On-die internal adjustable VREFDQ —
Refresh Cycle Count 8192 cycles —
Refresh Time, -40C to 85C 64 ms —
Refresh Time, >85C to 95C 32 ms —
Refresh Time, >95C 16 ms —
Package 96-ball FBGA, 9 x 14 mm 96-ball FBGA (7.5 x 13.5 mm)
Ball Pitch 0.8 mm —
Mounting Type Surface Mount Surface Mount
Operating Temperature [DATA_NEEDED: operating temperature range] -40C to +95C (IT grade)
RoHS Status Compliant Compliant
Memory Size — 8 Gbit
Organization — 512M x 16
Clock Frequency — 1.6 GHz
Access Time — 19 ns
Supply Voltage VDD/VDDQ — 1.2 V +/- 60 mV
Supply Voltage VPP — 2.5 V (-125 mV, +250 mV)
Bank Architecture — 16 banks in 2 groups of 4 (x16)
Refresh — 8192-cycle; 64 ms at -40C to +85C, 32 ms >85C to +95C, 16 ms >95C
Features — Auto self-refresh, write leveling, dynamic ODT, CRC, data mask, auto precharge, async reset, ZQ calibration, on-die adjustable VREFDQ

Datasheets & Resources

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