MT40A512M16JY-075E vs E3AD8G16A4-HR Comparison
Detailed side-by-side comparison of MT40A512M16JY-075E by Micron Technology and E3AD8G16A4-HR by ELIXIR/NANYA. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | MT40A512M16JY-075E | E3AD8G16A4-HR |
|---|---|---|
| Brand | Micron Technology | ELIXIR/NANYA |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $30.50 | $8.60 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Memory Size | 8 Gbit | — |
| Organization | 512M x 16 | 512M x 16 |
| Clock Frequency | 1.33 GHz | — |
| Data Rate | 2666 MT/s | 3200 MT/s |
| Supply Voltage (VDD/VDDQ) | 1.14V to 1.26V | — |
| VPP Voltage | 2.5V (-125mV, +250mV) | — |
| Interface | Parallel | — |
| Package | 96-FBGA (8x14) | TFBGA-96 |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | 0°C to +95°C (TC) | — |
| Refresh Time | 8192 cycles; 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C | — |
| RoHS Status | Compliant | — |
| Features | Auto precharge, data mask, dynamic on-chip termination, write leveling, auto self-refresh, CRC | — |
| I/O Type | 1.2V pseudo open-drain | — |
| Density | — | 8 Gb |
| Supply Voltage | — | 1.2 V |
| CAS Latency | — | 22 |
| Burst Length | — | 8 (BC4 optional) |
| Number of Banks | — | 16 (4 bank groups) |
| Refresh | — | Auto-refresh and self-refresh |
| Operating Temperature | — | 0C to +95C (TCASE) |
| RoHS | — | Compliant |
| Lead-Free | — | Yes |
| Speed Grade | — | DDR4-3200 |