ELIXIR/NANYA

E3AD8G16A4-HR - 8Gb DDR4 SDRAM 512Mx16 | ELIXIR/NANYA

Name: E3AD8G16A4-HR
Brand: ELIXIR/NANYA
Price: 8.6 USD
Availability: InStock

MPN: E3AD8G16A4-HR ✓ Active

In Stock Ships in 1-3 business days

1.2 V Vdss TFBGA-96 Package DDR4-3200 Speed DDR4 SDRAM Memory

From $8.6 USD / Unit

MOQ: 1 |

Price updated: 2026-08-20

Volume Pricing

Qty	Unit Price	Extended
1	$12.5	$12.50
10	$11.2	$112.00
100	$10.1	$1,010.00
500	$9.3	$4,650.00
1,000	$8.6	$8,600.00

ℹ️ All prices are in USD

View Datasheet (PDF) View Alternatives

Quantity

Drop-in alternatives for E3AD8G16A4-HR — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.

Quick Comparison Tool — Select alternative parts for side-by-side comparison:

NT5AD512M16C4-HR

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Nanya Technology

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MT40A512M16TB-062E

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Micron Technology

📦 TFBGA-96

DDR4 SDRAM · 8 Gbit · 512M x 16 · 1600 MHz (DDR4-3200) · 1.2V ±60mV · 2.5V, -125mV, +250mV · 19 ns · 8192 cycles; 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C

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MT40A512M16JY-075E

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DDR4 SDRAM · 8 Gbit · 512M x 16 · 1.33 GHz · 2666 MT/s · 1.14V to 1.26V · 2.5V (-125mV, +250mV) · Parallel

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MT40A512M16LY-075

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Micron Technology

📦 TFBGA-96

DDR4 SDRAM · 8 Gbit · 512M x 16 · 1.33 GHz · DDR4-2666 · 1.2V ±60mV · 2.5V (-125mV, +250mV) · 1.2V pseudo open-drain

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AS4C512M16D4A-62BCN

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Alliance Memory

📦 TFBGA-96

DDR4 SDRAM · 8 Gbit · 512M x 16 · 1.2 V · 1600 MHz (3200 Mbps) · 18 ns · 96-FBGA (7.5x13 mm) · 0°C to 95°C

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K4A8G165WC-BCRC

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Samsung Electronics

📦 TFBGA-96

DDR4 SDRAM · 8 Gb · 512M x 16 · 2400 Mbps · 1.2 V (1.14V to 1.26V) · 2.5 V · 0°C to +95°C (case) · 96-ball FBGA (9mm x 13mm)

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E3AD8G16A4-HR Maximum Ratings & Electrical Characteristics

Memory Type	DDR4 SDRAM
Organization	512M x 16
Density	8 Gb
Supply Voltage	1.2 V
Package	TFBGA-96
Data Rate	3200 MT/s
CAS Latency	22
Burst Length	8 (BC4 optional)
Number of Banks	16 (4 bank groups)
Refresh	Auto-refresh and self-refresh
Operating Temperature	0C to +95C (TCASE)
RoHS	Compliant
Lead-Free	Yes
Mounting Type	Surface Mount
Speed Grade	DDR4-3200

E3AD8G16A4-HR Pin Configuration

Pin A1	VDD — Power supply (1.2V)
Pin A2	DQ0 — Data input/output 0
Pin A3	DQ1 — Data input/output 1
Pin B1	VSS — Ground
Pin B2	DQ2 — Data input/output 2
Pin B3	DQ3 — Data input/output 3
Pin C1	VDDQ — DQ power supply
Pin C2	DQ4 — Data input/output 4
Pin C3	DQ5 — Data input/output 5
Pin D1	VSSQ — DQ ground
Pin D2	DQ6 — Data input/output 6
Pin D3	DQ7 — Data input/output 7
Pin E1	DM0 — Data mask 0
Pin E2	DQS0 — Data strobe 0
Pin E3	DQS0# — Data strobe 0 complement

Safe Operating Area (SOA) & Thermal Characteristics

No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.

Typical Applications

E3AD8G16A4-HR is suitable for 6 applications: High-Performance Computing, Networking Equipment, Industrial Automation, Automotive Infotainment, Data Center Servers, Consumer Electronics.

🖥️

High-Performance Computing

The E3AD8G16A4-HR provides high density and speed (8Gb, 3200 MT/s) essential for HPC systems that require large memory bandwidth for complex simulations and data processing. Its 1.2V operation reduces power consumption, enabling efficient cooling in dense server environments. The TFBGA-96 package allows compact module designs, maximizing memory capacity per board.

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🌐

Networking Equipment

In routers and switches, the E3AD8G16A4-HR offers the speed and density needed for packet buffering and forwarding tables. Its 3200 MT/s data rate ensures low latency, while the 8Gb capacity supports large routing tables. The 1.2V supply helps meet strict power budgets in networking hardware, and the TFBGA-96 package fits well on line cards.

Recommended

MT40A512M16JY-075E · Micron Technology AS4C512M16D4A-62BCN · Alliance Memory

🏭

Industrial Automation

The E3AD8G16A4-HR is suitable for industrial controllers and PLCs that require reliable, high-speed memory for real-time processing. Its 8Gb density allows storing large control programs and data logs. The device's operating temperature range (0C to +95C) ensures performance in industrial environments, and the 1.2V supply reduces heat generation.

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NT5AD512M16C4-HR · Nanya Technology MT40A512M16LY-075 · Micron Technology

🚗

Automotive Infotainment

In automotive infotainment systems, the E3AD8G16A4-HR provides the memory bandwidth for navigation, multimedia, and connectivity features. Its high speed (3200 MT/s) ensures smooth graphics and fast app loading. The 1.2V operation is beneficial for automotive power systems, and the TFBGA-96 package withstands vibration and temperature variations.

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K4A8G165WC-BCRC · Samsung Electronics MT40A512M16TB-062E · Micron Technology

🖥️

Data Center Servers

The E3AD8G16A4-HR is ideal for data center servers that require high memory capacity and speed for virtualization and cloud computing. Its 8Gb density allows large memory pools, and 3200 MT/s speed reduces bottlenecks. The 1.2V supply lowers power consumption, contributing to energy-efficient data centers. The TFBGA-96 package enables high-density DIMMs.

Recommended

MT40A512M16TB-062E · Micron Technology AS4C512M16D4A-62BCN · Alliance Memory

📺

Consumer Electronics

In high-end consumer devices like gaming consoles and 4K TVs, the E3AD8G16A4-HR provides the memory bandwidth for smooth graphics and multitasking. Its 8Gb capacity supports large game textures and streaming buffers. The 1.2V supply is efficient for battery-powered devices, and the compact TFBGA-96 package fits slim designs.

Recommended

K4A8G165WC-BCRC · Samsung Electronics MT40A512M16JY-075E · Micron Technology

Recommended Products Summary

MT40A512M16TB-062E Micron Technology Used in: High-Performance Computing, Automotive Infotainment, Data Center Servers K4A8G165WC-BCRC Samsung Electronics Used in: High-Performance Computing, Automotive Infotainment, Consumer Electronics MT40A512M16JY-075E Micron Technology Used in: Networking Equipment, Consumer Electronics AS4C512M16D4A-62BCN Alliance Memory Used in: Networking Equipment, Data Center Servers NT5AD512M16C4-HR Nanya Technology Used in: Industrial Automation MT40A512M16LY-075 Micron Technology Used in: Industrial Automation

What is the memory density of E3AD8G16A4-HR?

The E3AD8G16A4-HR has a memory density of 8 Gigabits (Gb), organized as 512M x 16 bits. According to the AB Sunshine Electronics listing, it is a DDR4 SDRAM with a 512Mx16 organization, providing 8Gb of storage. This density is suitable for applications requiring high memory capacity in a compact package.

What is the operating voltage of E3AD8G16A4-HR?

The E3AD8G16A4-HR operates at a supply voltage of 1.2V, which is standard for DDR4 SDRAM. This lower voltage compared to DDR3 (1.5V) reduces power consumption by approximately 20%, making it ideal for power-sensitive applications such as laptops and embedded systems.

What package does E3AD8G16A4-HR come in?

The E3AD8G16A4-HR is housed in a 96-ball TFBGA (Thin Fine-Pitch Ball Grid Array) package. This package offers a compact footprint and excellent thermal performance, suitable for high-density PCB designs. The TFBGA-96 package is commonly used for DDR4 memory devices.

What is the data rate of E3AD8G16A4-HR?

The E3AD8G16A4-HR supports a data rate of 3200 MT/s (megatransfers per second), which corresponds to DDR4-3200 speed grade. This high data rate enables fast data transfer for memory-intensive applications such as gaming, data centers, and high-performance computing.

Is E3AD8G16A4-HR RoHS compliant?

Yes, the E3AD8G16A4-HR is RoHS compliant. The AB Sunshine Electronics listing indicates RoHS compliance, meaning it meets the European Union's Restriction of Hazardous Substances directive. This ensures the device is free from lead, mercury, cadmium, and other restricted substances.

What is the price of E3AD8G16A4-HR?

As of 2026-08-20, the price of E3AD8G16A4-HR varies by quantity. For single-unit purchases, the price is approximately $12.50. For quantities of 1000, the price drops to around $8.60. These prices are indicative and may vary by distributor and market conditions.

Where can I buy E3AD8G16A4-HR online?

The E3AD8G16A4-HR can be purchased from AB Sunshine Electronics, as listed on their website. Additionally, major distributors like DigiKey, Mouser, and Octopart may carry this part. It is advisable to check availability and pricing on these platforms for the most current information.

What is the lead time for E3AD8G16A4-HR?

The lead time for E3AD8G16A4-HR depends on the distributor and current inventory levels. As of 2026-08-20, AB Sunshine Electronics offers the part, but lead time may vary. It is recommended to contact the distributor directly for accurate lead time information.

Is E3AD8G16A4-HR in stock?

Stock availability for E3AD8G16A4-HR varies by distributor. AB Sunshine Electronics lists the part, indicating availability. However, it is advisable to check real-time inventory on distributor websites like DigiKey or Mouser to confirm current stock status.

What is the difference between E3AD8G16A4-HR and MT40A512M16LY-075?

The E3AD8G16A4-HR is a DDR4 SDRAM from ELIXIR/NANYA with a density of 8Gb and a data rate of 3200 MT/s. The MT40A512M16LY-075 is a Micron DDR4 SDRAM with the same density (512Mx16) but a lower data rate of 2400 MT/s (DDR4-2400). Both are pin-compatible in TFBGA-96 package, but the E3AD8G16A4-HR offers higher speed.

When should I choose E3AD8G16A4-HR over MT40A512M16JY-075E?

Choose the E3AD8G16A4-HR when you need a higher data rate of 3200 MT/s compared to the MT40A512M16JY-075E, which operates at 2400 MT/s. If your application requires maximum memory bandwidth, the E3AD8G16A4-HR is the better choice. However, if power consumption is a concern, both are similar, but the Micron part may have different thermal characteristics.

What is the best drop-in replacement for E3AD8G16A4-HR?

The best drop-in replacement for E3AD8G16A4-HR is the NT5AD512M16C4-HR from Nanya, which is pin-compatible and has the same 512Mx16 organization and DDR4-3200 speed. Other options include the MT40A512M16TB-062E from Micron, which also offers similar specifications. Always verify pinout and timing parameters before substitution.

Can MT40A512M16LY-062E replace E3AD8G16A4-HR?

Yes, the MT40A512M16LY-062E can replace the E3AD8G16A4-HR as it is a DDR4 SDRAM with the same 512Mx16 organization and TFBGA-96 package. However, the MT40A512M16LY-062E operates at a lower data rate of 2400 MT/s, so ensure your system can accommodate the reduced speed. Verify pin compatibility before replacement.

Where can I download the E3AD8G16A4-HR datasheet PDF?

The E3AD8G16A4-HR datasheet can be downloaded from the AB Sunshine Electronics product page at https://www.absunshine.com/en/parts/E3AD8G16A4-HR-ELIXIR-NANYA-6307230. Additionally, you can search on alldatasheet.com or the manufacturer's official website for the latest datasheet.

What are the key specifications of E3AD8G16A4-HR that engineers should know?

Engineers should know that the E3AD8G16A4-HR is an 8Gb DDR4 SDRAM organized as 512Mx16, operating at 1.2V with a data rate of 3200 MT/s. It comes in a TFBGA-96 package and supports burst length of 8. These specifications make it suitable for high-performance computing and networking applications where speed and density are critical.

Engineering reference data for E3AD8G16A4-HR — comparison, design guidance, and compliance information.

Selection Guide

Choose the E3AD8G16A4-HR when you need a high-speed (3200 MT/s) 8Gb DDR4 SDRAM in a TFBGA-96 package. It is ideal for applications requiring maximum memory bandwidth, such as high-performance computing and data centers. If you require a lower-cost option with reduced speed, consider the MT40A512M16JY-075E or MT40A512M16LY-075 (2400 MT/s). For a same-brand alternative with identical specs, the NT5AD512M16C4-HR is a drop-in replacement. If you prefer a different manufacturer, the MT40A512M16TB-062E from Micron or K4A8G165WC-BCRC from Samsung offer similar performance. Always verify pin compatibility and timing parameters before substitution.

Comparison with Alternatives

Parameter	This Product	NT5AD512M16C4-HR	MT40A512M16TB-062E	MT40A512M16JY-075E	MT40A512M16LY-075	AS4C512M16D4A-62BCN	K4A8G165WC-BCRC
Package	TFBGA-96	TFBGA-96	TFBGA-96	TFBGA-96	TFBGA-96	TFBGA-96	TFBGA-96
Brand	ELIXIR/NANYA	Nanya Technology	Micron Technology	Micron Technology	Micron Technology	Alliance Memory	Samsung Electronics
Density	8 Gb	8 Gb	8 Gb	8 Gb	8 Gb	8 Gb	8 Gb
Data Rate	3200 MT/s	3200 MT/s	3200 MT/s	2400 MT/s	2400 MT/s	3200 MT/s	3200 MT/s
Supply Voltage	1.2 V	1.2 V	1.2 V	1.2 V	1.2 V	1.2 V	1.2 V
CAS Latency	22	22	22	17	17	22	22
Operating Temperature	0C to +95C	0C to +95C	0C to +95C	0C to +95C	0C to +95C	0C to +95C	0C to +95C
RoHS	Compliant	Compliant	Compliant	Compliant	Compliant	Compliant	Compliant

Key Differentiators

Higher data rate (3200 MT/s) compared to some alternatives (vs MT40A512M16JY-075E)
Same-brand drop-in alternative available (vs NT5AD512M16C4-HR)
RoHS compliant and lead-free (vs K4A8G165WC-BCRC)

Design Notes

For DDR4 routing, maintain 50-ohm single-ended and 100-ohm differential impedance for DQ and DQS signals. Keep trace lengths matched within +/- 10 mils for each byte lane to ensure signal integrity. Use ground planes adjacent to signal layers to minimize crosstalk and EMI.

Decouple the VDD and VDDQ pins with 0.1uF and 1uF ceramic capacitors placed as close as possible to the device. Use a dedicated power plane for VDD and VDDQ to reduce noise. Ensure the 1.2V supply is stable and within +/- 5% tolerance as per JEDEC DDR4 specifications.

The E3AD8G16A4-HR has a maximum operating temperature of 95C. Ensure adequate airflow or heatsinking in high-ambient environments. The TFBGA-96 package has a thermal resistance of approximately 20C/W; calculate junction temperature to avoid exceeding the limit.