MT40A512M16JY-07EAIT:B vs H5AN8G6NAFR-UHC Comparison

Detailed side-by-side comparison of MT40A512M16JY-07EAIT:B by Micron Technology and H5AN8G6NAFR-UHC by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Micron Technology
MT40A512M16JY-07EAIT:B MT40A512M16JY-07EAIT:B - 8Gb DDR4 SDRAM 512Mx16 | Micron

MT40A512M16JY-07EAIT:B - 8Gb DDR4 SDRAM 512Mx16 | Micron

MT40A512M16JY-07EAIT:B ✓ Active
SK hynix
H5AN8G6NAFR-UHC H5AN8G6NAFR-UHC - 8Gb DDR4 SDRAM 512Mx16 | SK hynix

H5AN8G6NAFR-UHC - 8Gb DDR4 SDRAM 512Mx16 | SK hynix

H5AN8G6NAFR-UHC ✓ Active

Specification Comparison

Parameter MT40A512M16JY-07EAIT:B H5AN8G6NAFR-UHC
Brand Micron Technology SK hynix
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $8.10 $5.74
Memory Type DDR4 SDRAM DDR4 SDRAM
Memory Size 8 Gbit —
Organization 512M x 16 512M x 16
Clock Frequency 1.33 GHz —
Data Rate 2666 MT/s 2400 MT/s
Supply Voltage (VDD/VDDQ) 1.2V ±60mV —
VPP Voltage 2.5V, -125mV, +250mV —
Interface Parallel —
Package 96-FBGA (8x14) FBGA-96
Operating Temperature Range -40°C to +105°C (AIT grade) —
Refresh Time 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C to 105°C —
I/O Type 1.2V pseudo open-drain —
VREFDQ On-die, internal, adjustable —
AEC-Q100 Qualified (AIT suffix) —
RoHS Compliant —
Density — 8 Gb
Supply Voltage — 1.2 V
Operating Temperature — 0°C to +85°C
Number of Terminals — 96
Package Code — TFBGA
Lead-Free — Yes
Halogen Free — Yes
RoHS Compliant — Yes
CAS Latency — [DATA_NEEDED: CAS Latency]
Burst Length — 8, 4 (with burst chop)
Refresh — Auto self-refresh

Datasheets & Resources

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