MT40A512M16JY-07EAIT:B vs NT5AD512M16 Comparison

Detailed side-by-side comparison of MT40A512M16JY-07EAIT:B by Micron Technology and NT5AD512M16 by Nanya Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Micron Technology
MT40A512M16JY-07EAIT:B MT40A512M16JY-07EAIT:B - 8Gb DDR4 SDRAM 512Mx16 | Micron

MT40A512M16JY-07EAIT:B - 8Gb DDR4 SDRAM 512Mx16 | Micron

MT40A512M16JY-07EAIT:B ✓ Active
Nanya Technology
NT5AD512M16 NT5AD512M16 - 8Gb DDR4 SDRAM 512Mx16 | Nanya Technology

NT5AD512M16 - 8Gb DDR4 SDRAM 512Mx16 | Nanya Technology

NT5AD512M16 ✓ Active

Specification Comparison

Parameter MT40A512M16JY-07EAIT:B NT5AD512M16
Brand Micron Technology Nanya Technology
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $8.10 $73.75
Memory Type DDR4 SDRAM DDR4 SDRAM
Memory Size 8 Gbit —
Organization 512M x 16 512M x 16
Clock Frequency 1.33 GHz —
Data Rate 2666 MT/s 3200 Mbps (DDR4-3200)
Supply Voltage (VDD/VDDQ) 1.2V ±60mV —
VPP Voltage 2.5V, -125mV, +250mV —
Interface Parallel —
Package 96-FBGA (8x14) 96-ball FBGA
Operating Temperature Range -40°C to +105°C (AIT grade) —
Refresh Time 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C to 105°C —
I/O Type 1.2V pseudo open-drain —
VREFDQ On-die, internal, adjustable —
AEC-Q100 Qualified (AIT suffix) —
RoHS Compliant Compliant
Total Density — 8 Gbit
Supply Voltage (VDD) — 1.2 V
Operating Temperature (Commercial) — 0°C to +95°C
Operating Temperature (Industrial) — -40°C to +95°C
Auto Self-Refresh — Yes
Built-in Temperature Sensor — Yes
Auto Precharge — Yes
Asynchronous Reset — Yes
Data Mask — Yes
Write Leveling — Yes
Dynamic On-Chip Termination — Yes
ZQ Calibration — Yes
CRC Function — Yes

Datasheets & Resources

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