MT40A512M16JY-07EAIT:B vs H5AN8G6NAFR-UHC Comparison
Detailed side-by-side comparison of MT40A512M16JY-07EAIT:B by Micron Technology and H5AN8G6NAFR-UHC by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Micron Technology
MT40A512M16JY-07EAIT:B
MT40A512M16JY-07EAIT:B - 8Gb DDR4 SDRAM 512Mx16 | Micron
MT40A512M16JY-07EAIT:B β ActiveSK hynix
H5AN8G6NAFR-UHC
H5AN8G6NAFR-UHC - 8Gb DDR4 SDRAM 512Mx16 | SK hynix
H5AN8G6NAFR-UHC β ActiveSpecification Comparison
| Parameter | MT40A512M16JY-07EAIT:B | H5AN8G6NAFR-UHC |
|---|---|---|
| Brand | Micron Technology | SK hynix |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $8.10 | $0.12 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Memory Size | 8 Gbit | β |
| Organization | 512M x 16 | 512M x 16 |
| Clock Frequency | 1.33 GHz | β |
| Data Rate | 2666 MT/s | 2400 MT/s |
| Supply Voltage (VDD/VDDQ) | 1.2V Β±60mV | β |
| VPP Voltage | 2.5V, -125mV, +250mV | β |
| Interface | Parallel | β |
| Package | 96-FBGA (8x14) | FBGA-96 |
| Operating Temperature Range | -40Β°C to +105Β°C (AIT grade) | β |
| Refresh Time | 64ms at -40Β°C to 85Β°C, 32ms at >85Β°C to 95Β°C, 16ms at >95Β°C to 105Β°C | β |
| I/O Type | 1.2V pseudo open-drain | β |
| VREFDQ | On-die, internal, adjustable | β |
| AEC-Q100 | Qualified (AIT suffix) | β |
| RoHS | Compliant | β |
| Density | β | 8 Gb |
| Supply Voltage | β | 1.2 V |
| Operating Temperature | β | 0Β°C to +85Β°C |
| Number of Terminals | β | 96 |
| Package Code | β | TFBGA |
| Lead-Free | β | Yes |
| Halogen-Free | β | Yes |
| RoHS Compliant | β | Yes |
| CAS Latency | β | [DATA_NEEDED: CAS Latency] |
| Burst Length | β | 8, 4 (with burst chop) |
| Refresh | β | Auto self-refresh |